JPS6289882A - 気相エツチング方法 - Google Patents

気相エツチング方法

Info

Publication number
JPS6289882A
JPS6289882A JP22808185A JP22808185A JPS6289882A JP S6289882 A JPS6289882 A JP S6289882A JP 22808185 A JP22808185 A JP 22808185A JP 22808185 A JP22808185 A JP 22808185A JP S6289882 A JPS6289882 A JP S6289882A
Authority
JP
Japan
Prior art keywords
gas
etching
substrate
cyclotron resonance
reactive gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22808185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6344827B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP22808185A priority Critical patent/JPS6289882A/ja
Publication of JPS6289882A publication Critical patent/JPS6289882A/ja
Publication of JPS6344827B2 publication Critical patent/JPS6344827B2/ja
Priority to JP1282546A priority patent/JPH0762262B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP22808185A 1985-10-14 1985-10-14 気相エツチング方法 Granted JPS6289882A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP22808185A JPS6289882A (ja) 1985-10-14 1985-10-14 気相エツチング方法
JP1282546A JPH0762262B2 (ja) 1985-10-14 1989-10-30 気相エッチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22808185A JPS6289882A (ja) 1985-10-14 1985-10-14 気相エツチング方法

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP1282544A Division JP2564664B2 (ja) 1989-10-30 1989-10-30 気相エッチング方法
JP28254589A Division JPH0831447B2 (ja) 1989-10-30 1989-10-30 気相エッチング方法
JP1282546A Division JPH0762262B2 (ja) 1985-10-14 1989-10-30 気相エッチング方法
JP1282543A Division JP2564663B2 (ja) 1989-10-30 1989-10-30 気相エッチング装置

Publications (2)

Publication Number Publication Date
JPS6289882A true JPS6289882A (ja) 1987-04-24
JPS6344827B2 JPS6344827B2 (enExample) 1988-09-07

Family

ID=16870891

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22808185A Granted JPS6289882A (ja) 1985-10-14 1985-10-14 気相エツチング方法

Country Status (1)

Country Link
JP (1) JPS6289882A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63317683A (ja) * 1987-05-13 1988-12-26 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ・エツチング方法
JPH01117033A (ja) * 1987-10-29 1989-05-09 Nec Corp 半導体製造装置
JPH02230729A (ja) * 1989-03-03 1990-09-13 Fujitsu Ltd 半導体製造装置
JPH02297930A (ja) * 1989-10-30 1990-12-10 Semiconductor Energy Lab Co Ltd 気相エッチング装置
JPH02297931A (ja) * 1989-10-30 1990-12-10 Semiconductor Energy Lab Co Ltd 気相エッチング方法
JPH03241830A (ja) * 1990-02-20 1991-10-29 Mitsubishi Electric Corp プラズマエッチングの方法
JPH0480920A (ja) * 1990-07-24 1992-03-13 Nippon Telegr & Teleph Corp <Ntt> 反応性イオンエッチング方法
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6171974B1 (en) * 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509545A (enExample) * 1973-05-31 1975-01-31
JPS55141729A (en) * 1979-04-21 1980-11-05 Nippon Telegr & Teleph Corp <Ntt> Ion-shower device
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS57164986A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Microwave plasma etching device
JPS6047421A (ja) * 1983-08-26 1985-03-14 Nippon Telegr & Teleph Corp <Ntt> ドライエッチング方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509545A (enExample) * 1973-05-31 1975-01-31
JPS55141729A (en) * 1979-04-21 1980-11-05 Nippon Telegr & Teleph Corp <Ntt> Ion-shower device
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS57164986A (en) * 1982-02-26 1982-10-09 Hitachi Ltd Microwave plasma etching device
JPS6047421A (ja) * 1983-08-26 1985-03-14 Nippon Telegr & Teleph Corp <Ntt> ドライエッチング方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512102A (en) * 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
JPS63317683A (ja) * 1987-05-13 1988-12-26 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン プラズマ・エツチング方法
JPH01117033A (ja) * 1987-10-29 1989-05-09 Nec Corp 半導体製造装置
JPH02230729A (ja) * 1989-03-03 1990-09-13 Fujitsu Ltd 半導体製造装置
JPH02297930A (ja) * 1989-10-30 1990-12-10 Semiconductor Energy Lab Co Ltd 気相エッチング装置
JPH02297931A (ja) * 1989-10-30 1990-12-10 Semiconductor Energy Lab Co Ltd 気相エッチング方法
JPH03241830A (ja) * 1990-02-20 1991-10-29 Mitsubishi Electric Corp プラズマエッチングの方法
JPH0480920A (ja) * 1990-07-24 1992-03-13 Nippon Telegr & Teleph Corp <Ntt> 反応性イオンエッチング方法
US6171974B1 (en) * 1991-06-27 2001-01-09 Applied Materials, Inc. High selectivity oxide etch process for integrated circuit structures

Also Published As

Publication number Publication date
JPS6344827B2 (enExample) 1988-09-07

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Legal Events

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EXPY Cancellation because of completion of term