JPS628947B2 - - Google Patents

Info

Publication number
JPS628947B2
JPS628947B2 JP1566480A JP1566480A JPS628947B2 JP S628947 B2 JPS628947 B2 JP S628947B2 JP 1566480 A JP1566480 A JP 1566480A JP 1566480 A JP1566480 A JP 1566480A JP S628947 B2 JPS628947 B2 JP S628947B2
Authority
JP
Japan
Prior art keywords
unit
capacitive element
capacitance
semiconductor
capacitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1566480A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56112750A (en
Inventor
Kazuo Ogasawara
Atsushi Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1566480A priority Critical patent/JPS56112750A/ja
Publication of JPS56112750A publication Critical patent/JPS56112750A/ja
Publication of JPS628947B2 publication Critical patent/JPS628947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP1566480A 1980-02-12 1980-02-12 Semiconductor capacitive element Granted JPS56112750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1566480A JPS56112750A (en) 1980-02-12 1980-02-12 Semiconductor capacitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1566480A JPS56112750A (en) 1980-02-12 1980-02-12 Semiconductor capacitive element

Publications (2)

Publication Number Publication Date
JPS56112750A JPS56112750A (en) 1981-09-05
JPS628947B2 true JPS628947B2 (US07223432-20070529-C00017.png) 1987-02-25

Family

ID=11895000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1566480A Granted JPS56112750A (en) 1980-02-12 1980-02-12 Semiconductor capacitive element

Country Status (1)

Country Link
JP (1) JPS56112750A (US07223432-20070529-C00017.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57199249A (en) * 1981-06-01 1982-12-07 Matsushita Electronics Corp Semiconductor device
US4527180A (en) * 1983-01-31 1985-07-02 Intel Corporation MOS Voltage divider structure suitable for higher potential feedback regulation
JPH0638466B2 (ja) * 1986-12-04 1994-05-18 三菱電機株式会社 半導体集積回路装置
US5006480A (en) * 1988-08-08 1991-04-09 Hughes Aircraft Company Metal gate capacitor fabricated with a silicon gate MOS process

Also Published As

Publication number Publication date
JPS56112750A (en) 1981-09-05

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