JPS628534A - 半導体実装構造 - Google Patents
半導体実装構造Info
- Publication number
- JPS628534A JPS628534A JP60147403A JP14740385A JPS628534A JP S628534 A JPS628534 A JP S628534A JP 60147403 A JP60147403 A JP 60147403A JP 14740385 A JP14740385 A JP 14740385A JP S628534 A JPS628534 A JP S628534A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- board
- mounting
- die
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06506—Wire or wire-like electrical connections between devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体の実装に関し、電子機器に利用される可
能性が大きい。
能性が大きい。
本発明は半導体装分野において半導体上面に他の半導体
を実装することにより平面スペースの縮少化を図ったも
のである。
を実装することにより平面スペースの縮少化を図ったも
のである。
従来の半導体装は$2図で示すようにボード3の上面に
複数の半導体1.2をダイボンドし半導体間の導通をと
る手段としてボード3上のパターンをかいしてワイヤー
ボンディング法により実。
複数の半導体1.2をダイボンドし半導体間の導通をと
る手段としてボード3上のパターンをかいしてワイヤー
ボンディング法により実。
施しでいた。
〔発明が解決しようとする問題点及び目的〕しかし、前
述の従来技術ではボード上に平面的に半導体をダイボン
ドするため実装面積が広く必要とするとする。そこで本
発明はこのような問題点を解決するもので、その目的と
するところは半導体上に半導体を実装することにより、
実装面積の縮少化を実現する、実装構造を提供するもの
である。
述の従来技術ではボード上に平面的に半導体をダイボン
ドするため実装面積が広く必要とするとする。そこで本
発明はこのような問題点を解決するもので、その目的と
するところは半導体上に半導体を実装することにより、
実装面積の縮少化を実現する、実装構造を提供するもの
である。
本発明の実装構造はボード上にダイボンドした半導体上
に他の半導体をダイボンドをし、両生導体電極をワイヤ
ーボンディング法により接続し導通をえることを特徴と
する。
に他の半導体をダイボンドをし、両生導体電極をワイヤ
ーボンディング法により接続し導通をえることを特徴と
する。
第1図(α)は本発明の実施例における実装断面図であ
って1はボードに実装された半導体である。2は半導体
1の上面に実装された半導体である。5はボード、4は
ボード上面に配線されたノぐターンである。5はワイヤ
ーボンディング後の配線されたワイヤー線である。7は
半導体を保護するための保護材である。第1工程として
ボード3の上面に接着材6を塗布する。第2工程として
半導体1をボード3にダイボンドする。第5工程として
半導体1の上面の半導体2をダイボンドする位置と接着
材6を塗布する。第4工程として半導体1の上面に半導
体2をダイボンドする。接着材6を硬化後、第5工程と
してワイヤーボンディング法により半導体1の電極部と
パターン4をワイヤーls9により導通させる。第6エ
程として第5工程と同様に半導体1の電極部と半導体2
の電極部をワイヤー線5により導通させる。第7エ程と
して保護材7を半導体がみえないように塗布し硬化させ
る。第1図(A)は本発明の実装平面図である。説明に
ついては第1図(α)の平面図と同様であるため説明は
省く。
って1はボードに実装された半導体である。2は半導体
1の上面に実装された半導体である。5はボード、4は
ボード上面に配線されたノぐターンである。5はワイヤ
ーボンディング後の配線されたワイヤー線である。7は
半導体を保護するための保護材である。第1工程として
ボード3の上面に接着材6を塗布する。第2工程として
半導体1をボード3にダイボンドする。第5工程として
半導体1の上面の半導体2をダイボンドする位置と接着
材6を塗布する。第4工程として半導体1の上面に半導
体2をダイボンドする。接着材6を硬化後、第5工程と
してワイヤーボンディング法により半導体1の電極部と
パターン4をワイヤーls9により導通させる。第6エ
程として第5工程と同様に半導体1の電極部と半導体2
の電極部をワイヤー線5により導通させる。第7エ程と
して保護材7を半導体がみえないように塗布し硬化させ
る。第1図(A)は本発明の実装平面図である。説明に
ついては第1図(α)の平面図と同様であるため説明は
省く。
第2図(α)は従来の実装断面図であり、第213U(
b)は実装平面図である。第1工程としてボード3に接
着材6を塗布する、第2工程として半導体1及び半導体
2をダイボンドする、第3工程としてワイヤーボンディ
ング法によりワイヤー線5により半導体1.半導体2と
パターン4を導通させる。第4工程として保護材7を半
導体1.半導体2がみえないように塗布し硬化させる。
b)は実装平面図である。第1工程としてボード3に接
着材6を塗布する、第2工程として半導体1及び半導体
2をダイボンドする、第3工程としてワイヤーボンディ
ング法によりワイヤー線5により半導体1.半導体2と
パターン4を導通させる。第4工程として保護材7を半
導体1.半導体2がみえないように塗布し硬化させる。
以上述べたように発明によれば半導体上面に他の半導体
を実装することにより実装面積を大巾に縮少することが
出来る。
を実装することにより実装面積を大巾に縮少することが
出来る。
第1図(α)は本発明の実装構造を示す断面図である。
第1図Cb)は本発明の平面図である。
第2v!J(α)は従来の実装構造を示す断面図である
。第2図(b)は従来の平面図である。 1・・・・・・半導体 2・・・・・・半導体 3・・・・・・ボード 4・・・・・・パターン 5・・・・・・ワイヤー線 6・・・・・・接着剤 7・・・・・・保護材 以上
。第2図(b)は従来の平面図である。 1・・・・・・半導体 2・・・・・・半導体 3・・・・・・ボード 4・・・・・・パターン 5・・・・・・ワイヤー線 6・・・・・・接着剤 7・・・・・・保護材 以上
Claims (2)
- (1)半導体上面に他の半導体を複数にダイボンドする
ことを特徴とする半導体実装。 - (2)ボード上にダイボンドされた半導体の電極部と半
導体上面にダイボンドされた半導体の電極部をワイヤー
ボンド法によりワイヤー線により導通させることを特徴
とする特許請求の範囲第1項記載の半導体実装構造。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60147403A JPS628534A (ja) | 1985-07-04 | 1985-07-04 | 半導体実装構造 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60147403A JPS628534A (ja) | 1985-07-04 | 1985-07-04 | 半導体実装構造 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS628534A true JPS628534A (ja) | 1987-01-16 |
Family
ID=15429499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60147403A Pending JPS628534A (ja) | 1985-07-04 | 1985-07-04 | 半導体実装構造 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS628534A (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US5256428A (en) * | 1985-06-17 | 1993-10-26 | Viskase Corporation | Puncture resistant, heat-shrinkable films containing very low density polyethylene |
US5256351A (en) * | 1985-06-17 | 1993-10-26 | Viskase Corporation | Process for making biaxially stretched, heat shrinkable VLDPE films |
EP0736903A3 (en) * | 1995-04-07 | 1999-01-27 | Nec Corporation | Three-dimensional multi-chip module having stacked semiconductor chips and process of fabrication thereof |
US6407456B1 (en) | 1996-02-20 | 2002-06-18 | Micron Technology, Inc. | Multi-chip device utilizing a flip chip and wire bond assembly |
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US6900528B2 (en) | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
US7109059B2 (en) | 1996-11-20 | 2006-09-19 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7485490B2 (en) | 2001-03-09 | 2009-02-03 | Amkor Technology, Inc. | Method of forming a stacked semiconductor package |
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1985
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US5256351A (en) * | 1985-06-17 | 1993-10-26 | Viskase Corporation | Process for making biaxially stretched, heat shrinkable VLDPE films |
US5439717A (en) * | 1985-06-17 | 1995-08-08 | Viskase Corporation | Shrunken bag made from biaxially stretched, VLDPE film |
US5256428A (en) * | 1985-06-17 | 1993-10-26 | Viskase Corporation | Puncture resistant, heat-shrinkable films containing very low density polyethylene |
EP0736903A3 (en) * | 1995-04-07 | 1999-01-27 | Nec Corporation | Three-dimensional multi-chip module having stacked semiconductor chips and process of fabrication thereof |
US7166495B2 (en) * | 1996-02-20 | 2007-01-23 | Micron Technology, Inc. | Method of fabricating a multi-die semiconductor package assembly |
US6407456B1 (en) | 1996-02-20 | 2002-06-18 | Micron Technology, Inc. | Multi-chip device utilizing a flip chip and wire bond assembly |
US7776652B2 (en) | 1996-11-20 | 2010-08-17 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7109059B2 (en) | 1996-11-20 | 2006-09-19 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7282792B2 (en) | 1996-11-20 | 2007-10-16 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7812436B2 (en) | 1996-11-20 | 2010-10-12 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7402902B2 (en) | 1996-11-20 | 2008-07-22 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7411286B2 (en) | 1996-11-20 | 2008-08-12 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7423339B2 (en) | 1996-11-20 | 2008-09-09 | Mircon Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7423338B2 (en) | 1996-11-20 | 2008-09-09 | Micron Technology, Inc. | Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice |
US7485490B2 (en) | 2001-03-09 | 2009-02-03 | Amkor Technology, Inc. | Method of forming a stacked semiconductor package |
US7375419B2 (en) | 2001-06-21 | 2008-05-20 | Micron Technology, Inc. | Stacked mass storage flash memory package |
US7704794B2 (en) | 2001-06-21 | 2010-04-27 | Micron Technology, Inc. | Method of forming a semiconductor device |
US6900528B2 (en) | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
US7998792B2 (en) | 2001-06-21 | 2011-08-16 | Round Rock Research, Llc | Semiconductor device assemblies, electronic devices including the same and assembly methods |
US7999378B2 (en) | 2001-06-21 | 2011-08-16 | Round Rock Research, Llc | Semiconductor devices including semiconductor dice in laterally offset stacked arrangement |
US8049342B2 (en) | 2001-06-21 | 2011-11-01 | Round Rock Research, Llc | Semiconductor device and method of fabrication thereof |
WO2003017327A3 (en) * | 2001-08-17 | 2003-11-20 | Qualcomm Inc | A method and apparatus for die stacking |
US7598747B2 (en) | 2006-01-27 | 2009-10-06 | Ricoh Company, Ltd. | Noise injection apparatus for printed circuit board |
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