JPS628534A - 半導体実装構造 - Google Patents

半導体実装構造

Info

Publication number
JPS628534A
JPS628534A JP60147403A JP14740385A JPS628534A JP S628534 A JPS628534 A JP S628534A JP 60147403 A JP60147403 A JP 60147403A JP 14740385 A JP14740385 A JP 14740385A JP S628534 A JPS628534 A JP S628534A
Authority
JP
Japan
Prior art keywords
semiconductor
board
mounting
die
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60147403A
Other languages
English (en)
Inventor
Masahiro Tsukahara
塚原 正宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP60147403A priority Critical patent/JPS628534A/ja
Publication of JPS628534A publication Critical patent/JPS628534A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06506Wire or wire-like electrical connections between devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06582Housing for the assembly, e.g. chip scale package [CSP]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体の実装に関し、電子機器に利用される可
能性が大きい。
〔発明の概要〕
本発明は半導体装分野において半導体上面に他の半導体
を実装することにより平面スペースの縮少化を図ったも
のである。
〔従来の技術〕
従来の半導体装は$2図で示すようにボード3の上面に
複数の半導体1.2をダイボンドし半導体間の導通をと
る手段としてボード3上のパターンをかいしてワイヤー
ボンディング法により実。
施しでいた。
〔発明が解決しようとする問題点及び目的〕しかし、前
述の従来技術ではボード上に平面的に半導体をダイボン
ドするため実装面積が広く必要とするとする。そこで本
発明はこのような問題点を解決するもので、その目的と
するところは半導体上に半導体を実装することにより、
実装面積の縮少化を実現する、実装構造を提供するもの
である。
〔問題点を解決するための手段〕
本発明の実装構造はボード上にダイボンドした半導体上
に他の半導体をダイボンドをし、両生導体電極をワイヤ
ーボンディング法により接続し導通をえることを特徴と
する。
〔実施例〕
第1図(α)は本発明の実施例における実装断面図であ
って1はボードに実装された半導体である。2は半導体
1の上面に実装された半導体である。5はボード、4は
ボード上面に配線されたノぐターンである。5はワイヤ
ーボンディング後の配線されたワイヤー線である。7は
半導体を保護するための保護材である。第1工程として
ボード3の上面に接着材6を塗布する。第2工程として
半導体1をボード3にダイボンドする。第5工程として
半導体1の上面の半導体2をダイボンドする位置と接着
材6を塗布する。第4工程として半導体1の上面に半導
体2をダイボンドする。接着材6を硬化後、第5工程と
してワイヤーボンディング法により半導体1の電極部と
パターン4をワイヤーls9により導通させる。第6エ
程として第5工程と同様に半導体1の電極部と半導体2
の電極部をワイヤー線5により導通させる。第7エ程と
して保護材7を半導体がみえないように塗布し硬化させ
る。第1図(A)は本発明の実装平面図である。説明に
ついては第1図(α)の平面図と同様であるため説明は
省く。
第2図(α)は従来の実装断面図であり、第213U(
b)は実装平面図である。第1工程としてボード3に接
着材6を塗布する、第2工程として半導体1及び半導体
2をダイボンドする、第3工程としてワイヤーボンディ
ング法によりワイヤー線5により半導体1.半導体2と
パターン4を導通させる。第4工程として保護材7を半
導体1.半導体2がみえないように塗布し硬化させる。
〔発明の効果〕
以上述べたように発明によれば半導体上面に他の半導体
を実装することにより実装面積を大巾に縮少することが
出来る。
【図面の簡単な説明】
第1図(α)は本発明の実装構造を示す断面図である。 第1図Cb)は本発明の平面図である。 第2v!J(α)は従来の実装構造を示す断面図である
。第2図(b)は従来の平面図である。 1・・・・・・半導体 2・・・・・・半導体 3・・・・・・ボード 4・・・・・・パターン 5・・・・・・ワイヤー線 6・・・・・・接着剤 7・・・・・・保護材 以上

Claims (2)

    【特許請求の範囲】
  1. (1)半導体上面に他の半導体を複数にダイボンドする
    ことを特徴とする半導体実装。
  2. (2)ボード上にダイボンドされた半導体の電極部と半
    導体上面にダイボンドされた半導体の電極部をワイヤー
    ボンド法によりワイヤー線により導通させることを特徴
    とする特許請求の範囲第1項記載の半導体実装構造。
JP60147403A 1985-07-04 1985-07-04 半導体実装構造 Pending JPS628534A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60147403A JPS628534A (ja) 1985-07-04 1985-07-04 半導体実装構造

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60147403A JPS628534A (ja) 1985-07-04 1985-07-04 半導体実装構造

Publications (1)

Publication Number Publication Date
JPS628534A true JPS628534A (ja) 1987-01-16

Family

ID=15429499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60147403A Pending JPS628534A (ja) 1985-07-04 1985-07-04 半導体実装構造

Country Status (1)

Country Link
JP (1) JPS628534A (ja)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256428A (en) * 1985-06-17 1993-10-26 Viskase Corporation Puncture resistant, heat-shrinkable films containing very low density polyethylene
US5256351A (en) * 1985-06-17 1993-10-26 Viskase Corporation Process for making biaxially stretched, heat shrinkable VLDPE films
EP0736903A3 (en) * 1995-04-07 1999-01-27 Nec Corporation Three-dimensional multi-chip module having stacked semiconductor chips and process of fabrication thereof
US6407456B1 (en) 1996-02-20 2002-06-18 Micron Technology, Inc. Multi-chip device utilizing a flip chip and wire bond assembly
WO2003017327A3 (en) * 2001-08-17 2003-11-20 Qualcomm Inc A method and apparatus for die stacking
US6900528B2 (en) 2001-06-21 2005-05-31 Micron Technology, Inc. Stacked mass storage flash memory package
US7109059B2 (en) 1996-11-20 2006-09-19 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7485490B2 (en) 2001-03-09 2009-02-03 Amkor Technology, Inc. Method of forming a stacked semiconductor package
US7598747B2 (en) 2006-01-27 2009-10-06 Ricoh Company, Ltd. Noise injection apparatus for printed circuit board

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256351A (en) * 1985-06-17 1993-10-26 Viskase Corporation Process for making biaxially stretched, heat shrinkable VLDPE films
US5439717A (en) * 1985-06-17 1995-08-08 Viskase Corporation Shrunken bag made from biaxially stretched, VLDPE film
US5256428A (en) * 1985-06-17 1993-10-26 Viskase Corporation Puncture resistant, heat-shrinkable films containing very low density polyethylene
EP0736903A3 (en) * 1995-04-07 1999-01-27 Nec Corporation Three-dimensional multi-chip module having stacked semiconductor chips and process of fabrication thereof
US7166495B2 (en) * 1996-02-20 2007-01-23 Micron Technology, Inc. Method of fabricating a multi-die semiconductor package assembly
US6407456B1 (en) 1996-02-20 2002-06-18 Micron Technology, Inc. Multi-chip device utilizing a flip chip and wire bond assembly
US7776652B2 (en) 1996-11-20 2010-08-17 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7109059B2 (en) 1996-11-20 2006-09-19 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7282792B2 (en) 1996-11-20 2007-10-16 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7812436B2 (en) 1996-11-20 2010-10-12 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7402902B2 (en) 1996-11-20 2008-07-22 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7411286B2 (en) 1996-11-20 2008-08-12 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7423339B2 (en) 1996-11-20 2008-09-09 Mircon Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7423338B2 (en) 1996-11-20 2008-09-09 Micron Technology, Inc. Methods for stacking wire-bonded integrated circuit dice on flip-chip bonded integrated circuit dice
US7485490B2 (en) 2001-03-09 2009-02-03 Amkor Technology, Inc. Method of forming a stacked semiconductor package
US7375419B2 (en) 2001-06-21 2008-05-20 Micron Technology, Inc. Stacked mass storage flash memory package
US7704794B2 (en) 2001-06-21 2010-04-27 Micron Technology, Inc. Method of forming a semiconductor device
US6900528B2 (en) 2001-06-21 2005-05-31 Micron Technology, Inc. Stacked mass storage flash memory package
US7998792B2 (en) 2001-06-21 2011-08-16 Round Rock Research, Llc Semiconductor device assemblies, electronic devices including the same and assembly methods
US7999378B2 (en) 2001-06-21 2011-08-16 Round Rock Research, Llc Semiconductor devices including semiconductor dice in laterally offset stacked arrangement
US8049342B2 (en) 2001-06-21 2011-11-01 Round Rock Research, Llc Semiconductor device and method of fabrication thereof
WO2003017327A3 (en) * 2001-08-17 2003-11-20 Qualcomm Inc A method and apparatus for die stacking
US7598747B2 (en) 2006-01-27 2009-10-06 Ricoh Company, Ltd. Noise injection apparatus for printed circuit board

Similar Documents

Publication Publication Date Title
US20020109216A1 (en) Integrated electronic device and integration method
KR880014671A (ko) 수지로 충진된 반도체 장치
JPS628534A (ja) 半導体実装構造
JPH02133942A (ja) セラミックチップキャリア型半導体装置
JP2810626B2 (ja) 半導体装置
JPH04144269A (ja) 混成集積回路装置
JP2587722Y2 (ja) 半導体装置
JPH01257361A (ja) 樹脂封止型半導体装置
KR940008060A (ko) 반도체 집적회로 장치
JPS63284831A (ja) 混成集積回路の製造方法
KR100507131B1 (ko) 엠씨엠 볼 그리드 어레이 패키지 형성 방법
JPH0141265B2 (ja)
JPS5847709Y2 (ja) 樹脂封止形半導体素子
JPH0684991A (ja) 半導体装置
JPH02203555A (ja) 半導体装置
JPH0364934A (ja) 樹脂封止型半導体装置
KR100352120B1 (ko) 리드프레임의 구조 및 이를 이용한 반도체 패키지
KR200169976Y1 (ko) 반도체 패키지
JPS63248155A (ja) 半導体装置
JP2629461B2 (ja) 樹脂封止形半導体装置
JPH05218263A (ja) リードフレーム及びこれを用いた樹脂封止型半導体装置
JPS6386461A (ja) 樹脂封止半導体装置
JP2755032B2 (ja) 半導体装置
JPH03255655A (ja) 半導体装置
JPS63107126A (ja) 半導体装置