JPS6280938A - チタン化合物フイ−ルドエミツタ−の製造方法 - Google Patents

チタン化合物フイ−ルドエミツタ−の製造方法

Info

Publication number
JPS6280938A
JPS6280938A JP60219835A JP21983585A JPS6280938A JP S6280938 A JPS6280938 A JP S6280938A JP 60219835 A JP60219835 A JP 60219835A JP 21983585 A JP21983585 A JP 21983585A JP S6280938 A JPS6280938 A JP S6280938A
Authority
JP
Japan
Prior art keywords
emitter
surface treatment
field emitter
treatment
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60219835A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0577134B2 (enrdf_load_stackoverflow
Inventor
Yoshio Ishizawa
石沢 芳夫
Chuhei Oshima
忠平 大島
Shigeki Otani
茂樹 大谷
Susumu Aoki
進 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP60219835A priority Critical patent/JPS6280938A/ja
Publication of JPS6280938A publication Critical patent/JPS6280938A/ja
Publication of JPH0577134B2 publication Critical patent/JPH0577134B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)
JP60219835A 1985-10-02 1985-10-02 チタン化合物フイ−ルドエミツタ−の製造方法 Granted JPS6280938A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60219835A JPS6280938A (ja) 1985-10-02 1985-10-02 チタン化合物フイ−ルドエミツタ−の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60219835A JPS6280938A (ja) 1985-10-02 1985-10-02 チタン化合物フイ−ルドエミツタ−の製造方法

Publications (2)

Publication Number Publication Date
JPS6280938A true JPS6280938A (ja) 1987-04-14
JPH0577134B2 JPH0577134B2 (enrdf_load_stackoverflow) 1993-10-26

Family

ID=16741794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60219835A Granted JPS6280938A (ja) 1985-10-02 1985-10-02 チタン化合物フイ−ルドエミツタ−の製造方法

Country Status (1)

Country Link
JP (1) JPS6280938A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63279535A (ja) * 1987-05-08 1988-11-16 Natl Inst For Res In Inorg Mater 炭窒化ニオブフイ−ルドエミツタ−の製造方法
CN106549157A (zh) * 2015-09-18 2017-03-29 中国科学院宁波材料技术与工程研究所 空心球形类石墨相c3n4和单质硫复合材料及其制法和应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63279535A (ja) * 1987-05-08 1988-11-16 Natl Inst For Res In Inorg Mater 炭窒化ニオブフイ−ルドエミツタ−の製造方法
CN106549157A (zh) * 2015-09-18 2017-03-29 中国科学院宁波材料技术与工程研究所 空心球形类石墨相c3n4和单质硫复合材料及其制法和应用

Also Published As

Publication number Publication date
JPH0577134B2 (enrdf_load_stackoverflow) 1993-10-26

Similar Documents

Publication Publication Date Title
Gohel et al. Field emission properties of N2 and Ar plasma-treated multi-wall carbon nanotubes
JPH02504444A (ja) 集中イオンビームを使用する金属化学蒸着用の選択エリア核および成長方法
JPS585496B2 (ja) 安定な熱電界放出陰極を再生可能に製造する方法
JPS6280938A (ja) チタン化合物フイ−ルドエミツタ−の製造方法
JPH06115915A (ja) 新炭素材料の製造方法
JPS6229032A (ja) 高安定フイ−ルドエミツタ−の製造方法
JPS63279535A (ja) 炭窒化ニオブフイ−ルドエミツタ−の製造方法
JPH0461724A (ja) 炭化ニオブフィールドエミッターの作製方法
JPH0421295B2 (enrdf_load_stackoverflow)
JPH0311054B2 (enrdf_load_stackoverflow)
JPS6280936A (ja) フイ−ルドエミツタ−の製造方法
JPH0434253B2 (enrdf_load_stackoverflow)
JPH0577133B2 (enrdf_load_stackoverflow)
JPH0441452B2 (enrdf_load_stackoverflow)
JPH03735B2 (enrdf_load_stackoverflow)
JPH03274642A (ja) 高輝度L↓aB↓6陰極
JPS6054735B2 (ja) 電界放射陰極
JPH0227643A (ja) 熱電界放射電子銃の安定化方法
JP2663518B2 (ja) シリコン基板の清浄化方法
JPS634454B2 (enrdf_load_stackoverflow)
US7101586B2 (en) Method to increase the emission current in FED displays through the surface modification of the emitters
JPS5971242A (ja) 高安定高輝度電子ビ−ムの発生法
JPH05209271A (ja) 選択cvd方法
JPS59148230A (ja) イオン源用チツプの製造方法
JPH0590155A (ja) 単結晶薄膜の製造装置及び製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term