JPS628037B2 - - Google Patents

Info

Publication number
JPS628037B2
JPS628037B2 JP15710679A JP15710679A JPS628037B2 JP S628037 B2 JPS628037 B2 JP S628037B2 JP 15710679 A JP15710679 A JP 15710679A JP 15710679 A JP15710679 A JP 15710679A JP S628037 B2 JPS628037 B2 JP S628037B2
Authority
JP
Japan
Prior art keywords
voltage
transistor
terminal
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15710679A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5679463A (en
Inventor
Masayoshi Achinami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP15710679A priority Critical patent/JPS5679463A/ja
Publication of JPS5679463A publication Critical patent/JPS5679463A/ja
Publication of JPS628037B2 publication Critical patent/JPS628037B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP15710679A 1979-12-03 1979-12-03 Semiconductor integrated circuit Granted JPS5679463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15710679A JPS5679463A (en) 1979-12-03 1979-12-03 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15710679A JPS5679463A (en) 1979-12-03 1979-12-03 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5679463A JPS5679463A (en) 1981-06-30
JPS628037B2 true JPS628037B2 (ko) 1987-02-20

Family

ID=15642355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15710679A Granted JPS5679463A (en) 1979-12-03 1979-12-03 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5679463A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212169A (ja) * 2008-02-29 2009-09-17 Fujitsu Ten Ltd 集積回路装置および電子機器

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5879743A (ja) * 1981-11-05 1983-05-13 Nec Corp モノリシツク集積回路
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ecl回路
JPH0656850B2 (ja) * 1984-08-30 1994-07-27 富士通株式会社 半導体装置
IT1217298B (it) * 1985-05-30 1990-03-22 Sgs Thomson Microelectronics Dispositivo di protezione da scariche elettrostatiche,in particolare per circuiti integrati bipolari
JPH01235266A (ja) * 1988-03-15 1989-09-20 Nec Corp 半導体集積回路装置
EP0429686B1 (de) * 1989-10-30 1994-12-28 Siemens Aktiengesellschaft Eingangsschutzstruktur für integrierte Schaltungen
US5138413A (en) * 1990-10-22 1992-08-11 Harris Corporation Piso electrostatic discharge protection device
US5545910A (en) * 1994-04-13 1996-08-13 Winbond Electronics Corp. ESD proctection device
JP4768591B2 (ja) * 2005-12-26 2011-09-07 株式会社東芝 電力増幅器

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176322C (nl) * 1976-02-24 1985-03-18 Philips Nv Halfgeleiderinrichting met beveiligingsschakeling.
JPS5580350A (en) * 1978-12-13 1980-06-17 Fujitsu Ltd Semiconductor integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212169A (ja) * 2008-02-29 2009-09-17 Fujitsu Ten Ltd 集積回路装置および電子機器

Also Published As

Publication number Publication date
JPS5679463A (en) 1981-06-30

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