JPS628012B2 - - Google Patents
Info
- Publication number
- JPS628012B2 JPS628012B2 JP56008817A JP881781A JPS628012B2 JP S628012 B2 JPS628012 B2 JP S628012B2 JP 56008817 A JP56008817 A JP 56008817A JP 881781 A JP881781 A JP 881781A JP S628012 B2 JPS628012 B2 JP S628012B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- layer
- semiconductor
- thin
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/90—
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56008817A JPS57122534A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56008817A JPS57122534A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57122534A JPS57122534A (en) | 1982-07-30 |
| JPS628012B2 true JPS628012B2 (OSRAM) | 1987-02-20 |
Family
ID=11703358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56008817A Granted JPS57122534A (en) | 1981-01-22 | 1981-01-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57122534A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893224A (ja) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | 半導体単結晶膜の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5548926A (en) * | 1978-10-02 | 1980-04-08 | Hitachi Ltd | Preparation of semiconductor device |
-
1981
- 1981-01-22 JP JP56008817A patent/JPS57122534A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57122534A (en) | 1982-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900000561B1 (ko) | 반도체 집적회로의 제법 및 그를 이용하여 제조된 장치 | |
| US4404735A (en) | Method for manufacturing a field isolation structure for a semiconductor device | |
| JPS6281709A (ja) | 半導体装置の製造方法 | |
| US4125426A (en) | Method of manufacturing semiconductor device | |
| JPS6359251B2 (OSRAM) | ||
| JPH0340501B2 (OSRAM) | ||
| JPS5891621A (ja) | 半導体装置の製造方法 | |
| JPS628012B2 (OSRAM) | ||
| US5192680A (en) | Method for producing semiconductor device | |
| JPS6289357A (ja) | バイポ−ラ集積回路において低欠陥密度の低固有抵抗領域を製造する方法 | |
| JPS5852843A (ja) | 半導体集積回路装置の製造法 | |
| JPS586306B2 (ja) | ハンドウタイソウチノ セイゾウホウホウ | |
| JPH0511668B2 (OSRAM) | ||
| JPS6347256B2 (OSRAM) | ||
| JP2939819B2 (ja) | 薄膜トランジスタの製造方法 | |
| JPS626649B2 (OSRAM) | ||
| JPS6017911A (ja) | 半導体装置の製造方法 | |
| JPS5952550B2 (ja) | 半導体装置の製造方法 | |
| JPH0748494B2 (ja) | 半導体装置の製造方法 | |
| JP3301785B2 (ja) | 薄膜トランジスタ | |
| JPS6014424A (ja) | 半導体装置の製造方法 | |
| JPS627142A (ja) | 半導体装置の製造方法 | |
| JPS6342406B2 (OSRAM) | ||
| JPS6125217B2 (OSRAM) | ||
| JPS60144931A (ja) | 半導体装置の製造方法 |