JPS627714B2 - - Google Patents

Info

Publication number
JPS627714B2
JPS627714B2 JP54128452A JP12845279A JPS627714B2 JP S627714 B2 JPS627714 B2 JP S627714B2 JP 54128452 A JP54128452 A JP 54128452A JP 12845279 A JP12845279 A JP 12845279A JP S627714 B2 JPS627714 B2 JP S627714B2
Authority
JP
Japan
Prior art keywords
region
floating gate
source
volts
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54128452A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5552274A (en
Inventor
Guriin Suchuwaato Rojaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5552274A publication Critical patent/JPS5552274A/ja
Publication of JPS627714B2 publication Critical patent/JPS627714B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/03—Injection moulding apparatus
    • B29C45/07—Injection moulding apparatus using movable injection units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
JP12845279A 1978-10-04 1979-10-03 Nonnvolatile memory Granted JPS5552274A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/948,507 US4185319A (en) 1978-10-04 1978-10-04 Non-volatile memory device

Publications (2)

Publication Number Publication Date
JPS5552274A JPS5552274A (en) 1980-04-16
JPS627714B2 true JPS627714B2 (en:Method) 1987-02-18

Family

ID=25487925

Family Applications (2)

Application Number Title Priority Date Filing Date
JP12845279A Granted JPS5552274A (en) 1978-10-04 1979-10-03 Nonnvolatile memory
JP57117600A Pending JPS5829199A (ja) 1978-10-04 1982-07-05 持久型記憶装置のプログラム方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP57117600A Pending JPS5829199A (ja) 1978-10-04 1982-07-05 持久型記憶装置のプログラム方法

Country Status (7)

Country Link
US (1) US4185319A (en:Method)
JP (2) JPS5552274A (en:Method)
DE (1) DE2939300C3 (en:Method)
FR (1) FR2438318B1 (en:Method)
GB (1) GB2033656B (en:Method)
IT (1) IT1123266B (en:Method)
SE (1) SE436667B (en:Method)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4302765A (en) * 1978-09-05 1981-11-24 Rockwell International Corporation Geometry for fabricating enhancement and depletion-type, pull-up field effect transistor devices
JPS5742161A (en) * 1980-08-28 1982-03-09 Fujitsu Ltd Semiconductor and production thereof
US4651186A (en) * 1981-11-18 1987-03-17 Mitsubishi Denki Kabushiki Kaisha Field effect transistor with improved withstand voltage characteristic
US4486859A (en) * 1982-02-19 1984-12-04 International Business Machines Corporation Electrically alterable read-only storage cell and method of operating same
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
US4571704A (en) * 1984-02-17 1986-02-18 Hughes Aircraft Company Nonvolatile latch
US4736342A (en) * 1985-11-15 1988-04-05 Texas Instruments Incorporated Method of forming a field plate in a high voltage array
US4933904A (en) * 1985-11-29 1990-06-12 General Electric Company Dense EPROM having serially coupled floating gate transistors
US5017505A (en) * 1986-07-18 1991-05-21 Nippondenso Co., Ltd. Method of making a nonvolatile semiconductor memory apparatus with a floating gate
US4918498A (en) * 1987-05-12 1990-04-17 General Electric Company Edgeless semiconductor device
US4864380A (en) * 1987-05-12 1989-09-05 General Electric Company Edgeless CMOS device
US4791464A (en) * 1987-05-12 1988-12-13 General Electric Company Semiconductor device that minimizes the leakage current associated with the parasitic edge transistors and a method of making the same
JPH07109873B2 (ja) * 1988-07-05 1995-11-22 株式会社東芝 半導体記憶装置
US5256370B1 (en) * 1992-05-04 1996-09-03 Indium Corp America Lead-free alloy containing tin silver and indium
DE69323484T2 (de) * 1993-04-22 1999-08-26 Stmicroelectronics S.R.L. Verfahren und Schaltung zur Tunneleffektprogrammierung eines MOSFETs mit schwebendem Gatter
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
KR0137693B1 (ko) * 1994-12-31 1998-06-15 김주용 셀프 부스트랩 장치
US5777361A (en) * 1996-06-03 1998-07-07 Motorola, Inc. Single gate nonvolatile memory cell and method for accessing the same
US7154141B2 (en) * 2001-02-02 2006-12-26 Hyundai Electronics America Source side programming
FR2823363B1 (fr) * 2001-04-05 2003-12-12 St Microelectronics Sa Procede d'effacement d'une cellule-memoire de type famos, et cellule-memoire correspondante
WO2007081642A2 (en) * 2005-12-21 2007-07-19 Sandisk Corporation Flash devicewith shared word lines and manufacturing methods thereof
US7655536B2 (en) * 2005-12-21 2010-02-02 Sandisk Corporation Methods of forming flash devices with shared word lines
US7495294B2 (en) * 2005-12-21 2009-02-24 Sandisk Corporation Flash devices with shared word lines
JP4789754B2 (ja) * 2006-08-31 2011-10-12 富士通セミコンダクター株式会社 半導体装置の製造方法
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
JP2012174762A (ja) * 2011-02-18 2012-09-10 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3500142A (en) * 1967-06-05 1970-03-10 Bell Telephone Labor Inc Field effect semiconductor apparatus with memory involving entrapment of charge carriers
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
NL7208026A (en:Method) * 1972-06-13 1973-12-17
DE2445079C3 (de) * 1974-09-20 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Speicher-Feldeffekttransistor
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device
DE2643948C2 (de) * 1976-09-29 1981-10-15 Siemens AG, 1000 Berlin und 8000 München In einer Matrix angeordnete Speicher-FETs und Verfahren zu ihrer Herstellung
DE2643931A1 (de) * 1976-09-29 1978-03-30 Siemens Ag In integrierter technik hergestellter baustein
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors

Also Published As

Publication number Publication date
IT1123266B (it) 1986-04-30
SE436667B (sv) 1985-01-14
JPS5552274A (en) 1980-04-16
FR2438318B1 (fr) 1985-08-16
GB2033656A (en) 1980-05-21
DE2939300C3 (de) 1988-05-26
DE2939300A1 (de) 1980-08-21
JPS5829199A (ja) 1983-02-21
IT7925898A0 (it) 1979-09-20
GB2033656B (en) 1983-08-17
US4185319A (en) 1980-01-22
SE7907382L (sv) 1980-04-05
FR2438318A1 (fr) 1980-04-30
DE2939300B2 (de) 1981-07-09

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