JPS627689B2 - - Google Patents

Info

Publication number
JPS627689B2
JPS627689B2 JP53159643A JP15964378A JPS627689B2 JP S627689 B2 JPS627689 B2 JP S627689B2 JP 53159643 A JP53159643 A JP 53159643A JP 15964378 A JP15964378 A JP 15964378A JP S627689 B2 JPS627689 B2 JP S627689B2
Authority
JP
Japan
Prior art keywords
pattern
electron beam
resist layer
amount
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53159643A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5583234A (en
Inventor
Atsushi Kikuchi
Akio Kanamaru
Nobumichi Okazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP15964378A priority Critical patent/JPS5583234A/ja
Publication of JPS5583234A publication Critical patent/JPS5583234A/ja
Publication of JPS627689B2 publication Critical patent/JPS627689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP15964378A 1978-12-20 1978-12-20 Electron beam exposure Granted JPS5583234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15964378A JPS5583234A (en) 1978-12-20 1978-12-20 Electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15964378A JPS5583234A (en) 1978-12-20 1978-12-20 Electron beam exposure

Publications (2)

Publication Number Publication Date
JPS5583234A JPS5583234A (en) 1980-06-23
JPS627689B2 true JPS627689B2 (en:Method) 1987-02-18

Family

ID=15698188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15964378A Granted JPS5583234A (en) 1978-12-20 1978-12-20 Electron beam exposure

Country Status (1)

Country Link
JP (1) JPS5583234A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5843516A (ja) * 1981-09-08 1983-03-14 Fujitsu Ltd 電子ビ−ム露光方法
JPS5861628A (ja) * 1981-10-08 1983-04-12 Nippon Telegr & Teleph Corp <Ntt> 電子ビ−ム露光における近接効果補正方法
JPS59112621A (ja) * 1982-12-20 1984-06-29 Fujitsu Ltd 電子ビ−ム露光方法
JPS59172233A (ja) * 1983-03-19 1984-09-28 Fujitsu Ltd 電子ビ−ム露光方法

Also Published As

Publication number Publication date
JPS5583234A (en) 1980-06-23

Similar Documents

Publication Publication Date Title
DE102006041436B4 (de) Strahldosierungsberechnungsverfahren und Schreibverfahren und Aufzeichnungsträger und Schreibgerät
EP0097417A2 (en) Electron beam lithography
JPH04258111A (ja) 電子ビームリトグラフィにおける近接効果を補正する方法
US5278421A (en) Pattern fabrication method using a charged particle beam and apparatus for realizing same
JP3348586B2 (ja) 電子線リソグラフィ技術における近接効果補正法
DE102007056242A1 (de) Vorrichtung und Verfahren zum Schreiben mit Strahl aus geladenen Partikeln, Verfahren zum erneuten Bemassen einer Dimensionsvariation aufgrund eines Ladeeffekts und Speichermedium, das ein Programm speichert
JPH0620931A (ja) 電子ビーム露光方法
DE112021002703T5 (de) Verfahren zum Schreiben mit geladenen Teilchenstrahlen und Vorrichtung zum Schreiben mit geladenen Teilchenstrahlen
JPH11204415A (ja) 電子ビーム描画装置及び電子ビーム描画方法
DE102013213307B4 (de) Ladungsträgerteilchenstrahl-Schreibvorrichtung und Bestrahlungszeit-Einteilungsverfahren von Ladungsträgerteilchenstrahlen zum mehrfachen Schreiben
EP0166549A2 (en) Method for proximity effect correction in electron beam lithography systems
JP2647000B2 (ja) 電子ビームの露光方法
JP2001052999A (ja) 荷電粒子ビーム露光方法
JPS627689B2 (en:Method)
JP2950258B2 (ja) 荷電粒子線描画方法及び装置
JP2862532B2 (ja) 荷電粒子線描画方法およびその装置
US6060717A (en) Charged particle beam exposure method and charged particle beam exposure apparatus therefor
KR102366045B1 (ko) 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치
JPH05160010A (ja) 荷電粒子ビーム露光方法
JP3353766B2 (ja) パターンデータ処理方法及びプログラムを記憶した記憶媒体
JPH065502A (ja) 露光データ変換方法および露光データ変換装置
JP3330306B2 (ja) 荷電ビーム描画方法
JPH10284385A (ja) 電子線描画方法
JPH0837146A (ja) 電子ビーム露光法および電子ビーム露光装置
JP2834468B2 (ja) レジストパターンの形成方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term
S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R370 Written measure of declining of transfer procedure

Free format text: JAPANESE INTERMEDIATE CODE: R370