JPS6276665A - 相補型半導体装置 - Google Patents

相補型半導体装置

Info

Publication number
JPS6276665A
JPS6276665A JP60216510A JP21651085A JPS6276665A JP S6276665 A JPS6276665 A JP S6276665A JP 60216510 A JP60216510 A JP 60216510A JP 21651085 A JP21651085 A JP 21651085A JP S6276665 A JPS6276665 A JP S6276665A
Authority
JP
Japan
Prior art keywords
conductivity type
gate electrode
type
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60216510A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0322708B2 (enrdf_load_stackoverflow
Inventor
Yoshinori Asahi
朝日　良典
Tatsuo Noguchi
達夫 野口
Yoichi Hiruta
陽一 蛭田
Moriya Nakahara
中原　守弥
Kenji Maeguchi
前口　賢二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60216510A priority Critical patent/JPS6276665A/ja
Publication of JPS6276665A publication Critical patent/JPS6276665A/ja
Publication of JPH0322708B2 publication Critical patent/JPH0322708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP60216510A 1985-09-30 1985-09-30 相補型半導体装置 Granted JPS6276665A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60216510A JPS6276665A (ja) 1985-09-30 1985-09-30 相補型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60216510A JPS6276665A (ja) 1985-09-30 1985-09-30 相補型半導体装置

Publications (2)

Publication Number Publication Date
JPS6276665A true JPS6276665A (ja) 1987-04-08
JPH0322708B2 JPH0322708B2 (enrdf_load_stackoverflow) 1991-03-27

Family

ID=16689557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60216510A Granted JPS6276665A (ja) 1985-09-30 1985-09-30 相補型半導体装置

Country Status (1)

Country Link
JP (1) JPS6276665A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073859A (ja) * 2004-09-03 2006-03-16 Samsung Electronics Co Ltd 半導体装置及びその製造方法
JP2008103417A (ja) * 2006-10-17 2008-05-01 Asahi Kasei Electronics Co Ltd 半導体装置及びその製造方法
JP2010212714A (ja) * 2010-04-27 2010-09-24 Canon Inc 固体撮像素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160462A (en) * 1979-05-31 1980-12-13 Fujitsu Ltd Semiconductor device
JPS5736856A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Manufacture of complementary type insulated gate field effect semiconductor device
JPS5887858A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 相補型絶縁ゲ−ト電界効果半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55160462A (en) * 1979-05-31 1980-12-13 Fujitsu Ltd Semiconductor device
JPS5736856A (en) * 1980-08-15 1982-02-27 Hitachi Ltd Manufacture of complementary type insulated gate field effect semiconductor device
JPS5887858A (ja) * 1981-11-20 1983-05-25 Hitachi Ltd 相補型絶縁ゲ−ト電界効果半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073859A (ja) * 2004-09-03 2006-03-16 Samsung Electronics Co Ltd 半導体装置及びその製造方法
JP2008103417A (ja) * 2006-10-17 2008-05-01 Asahi Kasei Electronics Co Ltd 半導体装置及びその製造方法
JP2010212714A (ja) * 2010-04-27 2010-09-24 Canon Inc 固体撮像素子

Also Published As

Publication number Publication date
JPH0322708B2 (enrdf_load_stackoverflow) 1991-03-27

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees