JPS626647B2 - - Google Patents
Info
- Publication number
- JPS626647B2 JPS626647B2 JP54118261A JP11826179A JPS626647B2 JP S626647 B2 JPS626647 B2 JP S626647B2 JP 54118261 A JP54118261 A JP 54118261A JP 11826179 A JP11826179 A JP 11826179A JP S626647 B2 JPS626647 B2 JP S626647B2
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- film
- diffusion source
- semiconductor substrate
- nitride chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
Landscapes
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11826179A JPS5642336A (en) | 1979-09-14 | 1979-09-14 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11826179A JPS5642336A (en) | 1979-09-14 | 1979-09-14 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5642336A JPS5642336A (en) | 1981-04-20 |
| JPS626647B2 true JPS626647B2 (https=) | 1987-02-12 |
Family
ID=14732240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11826179A Granted JPS5642336A (en) | 1979-09-14 | 1979-09-14 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642336A (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6021321A (ja) * | 1983-07-12 | 1985-02-02 | Toray Eng Co Ltd | 流動層炉による金属物の加熱又は冷却方法 |
| JPS60138974A (ja) * | 1983-12-27 | 1985-07-23 | Fuji Electric Corp Res & Dev Ltd | 絶縁ゲ−ト型電界効果トランジスタの製造方法 |
| JPS629627A (ja) * | 1985-07-06 | 1987-01-17 | Sony Corp | 半導体装置の製造方法 |
| JPH0797565B2 (ja) * | 1985-07-12 | 1995-10-18 | ソニー株式会社 | 半導体装置の製造方法 |
-
1979
- 1979-09-14 JP JP11826179A patent/JPS5642336A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5642336A (en) | 1981-04-20 |
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