JPS6117134B2 - - Google Patents

Info

Publication number
JPS6117134B2
JPS6117134B2 JP53058064A JP5806478A JPS6117134B2 JP S6117134 B2 JPS6117134 B2 JP S6117134B2 JP 53058064 A JP53058064 A JP 53058064A JP 5806478 A JP5806478 A JP 5806478A JP S6117134 B2 JPS6117134 B2 JP S6117134B2
Authority
JP
Japan
Prior art keywords
diffusion
insulating film
silicon substrate
semiconductor substrate
selectively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53058064A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54149463A (en
Inventor
Kaoru Inoe
Takashi Hirao
Shigetoshi Takayanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5806478A priority Critical patent/JPS54149463A/ja
Publication of JPS54149463A publication Critical patent/JPS54149463A/ja
Publication of JPS6117134B2 publication Critical patent/JPS6117134B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5806478A 1978-05-15 1978-05-15 Selective diffusion method aluminum Granted JPS54149463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5806478A JPS54149463A (en) 1978-05-15 1978-05-15 Selective diffusion method aluminum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5806478A JPS54149463A (en) 1978-05-15 1978-05-15 Selective diffusion method aluminum

Publications (2)

Publication Number Publication Date
JPS54149463A JPS54149463A (en) 1979-11-22
JPS6117134B2 true JPS6117134B2 (https=) 1986-05-06

Family

ID=13073471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5806478A Granted JPS54149463A (en) 1978-05-15 1978-05-15 Selective diffusion method aluminum

Country Status (1)

Country Link
JP (1) JPS54149463A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163635B2 (en) 2009-12-07 2012-04-24 Sen Corporation Manufacturing method of semiconductor device
JP2012160570A (ja) * 2011-01-31 2012-08-23 Mitsubishi Materials Corp プラズマエッチング用シリコン電極板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8163635B2 (en) 2009-12-07 2012-04-24 Sen Corporation Manufacturing method of semiconductor device
JP2012160570A (ja) * 2011-01-31 2012-08-23 Mitsubishi Materials Corp プラズマエッチング用シリコン電極板

Also Published As

Publication number Publication date
JPS54149463A (en) 1979-11-22

Similar Documents

Publication Publication Date Title
US4885259A (en) Method of manufacturing a semiconductor device, in which metal silicide is provided in a self-registered manner
EP0040032B1 (en) The manufacture of a semiconductor device
JPS6359251B2 (https=)
JP2599556B2 (ja) 高濃度ドープ領域を有する半導体装置の製造方法
JPS63166220A (ja) 半導体装置の製造方法
US3507716A (en) Method of manufacturing semiconductor device
US3352725A (en) Method of forming a gallium arsenide transistor by diffusion
JPS6117134B2 (https=)
JPS5917243A (ja) 半導体装置の製造方法
US4725564A (en) Method of manufacturing a semiconductor device, in which a dopant is diffused from its oxide into a semiconductor body
JPS6227727B2 (https=)
JPS60216538A (ja) 半導体基板への不純物拡散方法
JPS6125209B2 (https=)
JP3039646B1 (ja) 半導体装置の製造方法
US4210473A (en) Process for producing a semiconductor device
JP3366053B2 (ja) 半導体装置の製造方法
JP3053018B1 (ja) 半導体装置の製造方法
JPS5933255B2 (ja) 半導体装置の製造方法
JPH0137856B2 (https=)
JP2558765B2 (ja) 半導体装置の製造方法
JPS63186423A (ja) 半導体装置の製造方法
JPS57118633A (en) Manufacture of semiconductor device
JPS6276559A (ja) 半導体装置の製造方法
JPS6152565B2 (https=)
JPH0384923A (ja) 半導体への不純物拡散方法