JPS626643B2 - - Google Patents

Info

Publication number
JPS626643B2
JPS626643B2 JP54068428A JP6842879A JPS626643B2 JP S626643 B2 JPS626643 B2 JP S626643B2 JP 54068428 A JP54068428 A JP 54068428A JP 6842879 A JP6842879 A JP 6842879A JP S626643 B2 JPS626643 B2 JP S626643B2
Authority
JP
Japan
Prior art keywords
thin film
substance
group
molecular beam
vapor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54068428A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55160423A (en
Inventor
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6842879A priority Critical patent/JPS55160423A/ja
Publication of JPS55160423A publication Critical patent/JPS55160423A/ja
Publication of JPS626643B2 publication Critical patent/JPS626643B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/22—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6842879A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842879A JPS55160423A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842879A JPS55160423A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Publications (2)

Publication Number Publication Date
JPS55160423A JPS55160423A (en) 1980-12-13
JPS626643B2 true JPS626643B2 (enExample) 1987-02-12

Family

ID=13373404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842879A Granted JPS55160423A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Country Status (1)

Country Link
JP (1) JPS55160423A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152296A (ja) * 1983-02-17 1984-08-30 Agency Of Ind Science & Technol 分子線エピタキシヤル成長における分子線強度制御方法
JPS59223293A (ja) * 1983-05-31 1984-12-15 Anelva Corp 分子線エピタキシヤル成長装置
JPH0637347B2 (ja) * 1985-06-19 1994-05-18 株式会社日立製作所 容器もしくは容器内部材に付着した不要なヒ素の除去法

Also Published As

Publication number Publication date
JPS55160423A (en) 1980-12-13

Similar Documents

Publication Publication Date Title
Farrow Growth of indium phosphide films from In and P2 beams in ultra-high vacuum
US3992233A (en) Surface treatment of III-V compound crystals
JPS626643B2 (enExample)
US3476593A (en) Method of forming gallium arsenide films by vacuum deposition techniques
JPS6225249B2 (enExample)
JP2600179B2 (ja) ラセミ体薄膜の形成方法
JPS6272113A (ja) 分子線結晶成長装置
JP2844779B2 (ja) 膜形成方法
JPS62229823A (ja) 不純物添加化合物半導体結晶の成長方法
JPS63937B2 (enExample)
JPS6240845B2 (enExample)
JPS5895695A (ja) 分子線結晶成長装置
JP2603933B2 (ja) 化合物薄膜の形成方法
Kiuchi et al. Crystallization in low-energy deposition of titanium ions
Schachter et al. Reactive sputtering of polyphosphide thin films by plasma cracking of P4
JPH0469809B2 (enExample)
JPS54104489A (en) Method and apparatus for growing thin film
JPH04317498A (ja) ダイヤモンド薄膜の不純物制御方法
JP2766645B2 (ja) 化合物半導体薄膜結晶の成長方法
JPH08311649A (ja) 薄膜形成装置
JPS60239031A (ja) 硫黄化合物の真空蒸着方法および装置
JPS584920A (ja) 半導体の製造方法
JPH04214856A (ja) 硫化物薄膜の製造方法
JPS60145998A (ja) Ｍｂｅ成長方法
JPH05222534A (ja) 蒸着装置