JPS55160423A - Method and device for thin film growth - Google Patents

Method and device for thin film growth

Info

Publication number
JPS55160423A
JPS55160423A JP6842879A JP6842879A JPS55160423A JP S55160423 A JPS55160423 A JP S55160423A JP 6842879 A JP6842879 A JP 6842879A JP 6842879 A JP6842879 A JP 6842879A JP S55160423 A JPS55160423 A JP S55160423A
Authority
JP
Japan
Prior art keywords
room
spectrometer
beam source
molecular beam
mass spectrometer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6842879A
Other languages
English (en)
Japanese (ja)
Other versions
JPS626643B2 (enExample
Inventor
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP6842879A priority Critical patent/JPS55160423A/ja
Publication of JPS55160423A publication Critical patent/JPS55160423A/ja
Publication of JPS626643B2 publication Critical patent/JPS626643B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP6842879A 1979-05-31 1979-05-31 Method and device for thin film growth Granted JPS55160423A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6842879A JPS55160423A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6842879A JPS55160423A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Publications (2)

Publication Number Publication Date
JPS55160423A true JPS55160423A (en) 1980-12-13
JPS626643B2 JPS626643B2 (enExample) 1987-02-12

Family

ID=13373404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6842879A Granted JPS55160423A (en) 1979-05-31 1979-05-31 Method and device for thin film growth

Country Status (1)

Country Link
JP (1) JPS55160423A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152296A (ja) * 1983-02-17 1984-08-30 Agency Of Ind Science & Technol 分子線エピタキシヤル成長における分子線強度制御方法
JPS59223293A (ja) * 1983-05-31 1984-12-15 Anelva Corp 分子線エピタキシヤル成長装置
JPS61291490A (ja) * 1985-06-19 1986-12-22 Hitachi Ltd 容器もしくは容器内部材に付着した不要なヒ素の除去法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152296A (ja) * 1983-02-17 1984-08-30 Agency Of Ind Science & Technol 分子線エピタキシヤル成長における分子線強度制御方法
JPS59223293A (ja) * 1983-05-31 1984-12-15 Anelva Corp 分子線エピタキシヤル成長装置
JPS61291490A (ja) * 1985-06-19 1986-12-22 Hitachi Ltd 容器もしくは容器内部材に付着した不要なヒ素の除去法

Also Published As

Publication number Publication date
JPS626643B2 (enExample) 1987-02-12

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