JPS626638B2 - - Google Patents
Info
- Publication number
- JPS626638B2 JPS626638B2 JP18524682A JP18524682A JPS626638B2 JP S626638 B2 JPS626638 B2 JP S626638B2 JP 18524682 A JP18524682 A JP 18524682A JP 18524682 A JP18524682 A JP 18524682A JP S626638 B2 JPS626638 B2 JP S626638B2
- Authority
- JP
- Japan
- Prior art keywords
- deposited
- ion beam
- thin film
- metal
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 144
- 238000010884 ion-beam technique Methods 0.000 claims description 109
- 150000002500 ions Chemical class 0.000 claims description 85
- 238000007740 vapor deposition Methods 0.000 claims description 78
- 229910044991 metal oxide Inorganic materials 0.000 claims description 77
- 150000004706 metal oxides Chemical class 0.000 claims description 77
- 238000004544 sputter deposition Methods 0.000 claims description 77
- 239000001301 oxygen Substances 0.000 claims description 65
- 229910052760 oxygen Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 57
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 53
- 238000001704 evaporation Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 26
- 230000008020 evaporation Effects 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 19
- 239000012298 atmosphere Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 10
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 78
- 239000004408 titanium dioxide Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 27
- 229910052709 silver Inorganic materials 0.000 description 25
- 239000004332 silver Substances 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 17
- -1 Oxygen ions Chemical class 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000002513 implantation Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Substances [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 241001480748 Argas Species 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18524682A JPS5974279A (ja) | 1982-10-21 | 1982-10-21 | 金属薄膜の蒸着被覆装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18524682A JPS5974279A (ja) | 1982-10-21 | 1982-10-21 | 金属薄膜の蒸着被覆装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5974279A JPS5974279A (ja) | 1984-04-26 |
| JPS626638B2 true JPS626638B2 (fr) | 1987-02-12 |
Family
ID=16167442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18524682A Granted JPS5974279A (ja) | 1982-10-21 | 1982-10-21 | 金属薄膜の蒸着被覆装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5974279A (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01215969A (ja) * | 1988-02-23 | 1989-08-29 | Fujitsu Ltd | 酸化タンタルの成膜方法 |
| JPH01244403A (ja) * | 1988-03-25 | 1989-09-28 | Nissin Electric Co Ltd | 光学膜の作製方法 |
| JPH01244402A (ja) * | 1988-03-25 | 1989-09-28 | Nissin Electric Co Ltd | 光学膜の作製方法 |
| DE19640832C2 (de) * | 1996-10-02 | 2000-08-10 | Fraunhofer Ges Forschung | Verfahren zur Herstellung wärmereflektierender Schichtsysteme |
| KR101052036B1 (ko) * | 2006-05-27 | 2011-07-26 | 한국수력원자력 주식회사 | 고온 내 부식성 향상을 위한 세라믹 코팅 및 이온빔 믹싱장치 및 이를 이용한 박막의 계면을 개질하는 방법 |
| KR100877574B1 (ko) * | 2006-12-08 | 2009-01-08 | 한국원자력연구원 | 원자력 수소생산용 고온, 고압 및 내식성 공정 열교환기 |
| JP5830238B2 (ja) * | 2010-11-17 | 2015-12-09 | 古河電気工業株式会社 | 酸化物薄膜の製造方法 |
| CN103204637B (zh) * | 2012-01-12 | 2015-08-12 | 上海北玻玻璃技术工业有限公司 | 一种透明导电氧化物镀膜玻璃镀膜线真空系统 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4108751A (en) * | 1977-06-06 | 1978-08-22 | King William J | Ion beam implantation-sputtering |
| JPS55110028A (en) * | 1979-02-16 | 1980-08-25 | Seiko Epson Corp | Apparatus for vacuum evaporation having evaporation source for ion beam sputtering |
| JPS57174459A (en) * | 1981-04-21 | 1982-10-27 | Namiki Precision Jewel Co Ltd | Formation of thin film |
-
1982
- 1982-10-21 JP JP18524682A patent/JPS5974279A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5974279A (ja) | 1984-04-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5055319A (en) | Controlled high rate deposition of metal oxide films | |
| EP0636702B1 (fr) | Procédé pour la formation de films fonctionnels | |
| EA012048B1 (ru) | Подложка, покрытая слоем диэлектрика, способ и устройство для её изготовления | |
| US20020068167A1 (en) | UV absorbing/reflecting silver oxide layer, and method of making same | |
| US20090011194A1 (en) | Substrate processing method | |
| US5443862A (en) | Process for the treatment of thin films having properties of electrical conduction and/or reflection in the infrared | |
| JPH03173770A (ja) | イオンビームスパッタによる多元系薄膜形成方法および多元系薄膜形成装置 | |
| US20060257585A1 (en) | Method of vapor-depositing strip-shaped substrates with a transparent barrier layer made of aluminum oxide | |
| US3694337A (en) | Sputtering method for manufacturing transparent,heat ray reflecting glass | |
| EP0288001B1 (fr) | Procédé pour produire une couche mince supraconductrice et dispositif pour mettre en oeuvre ce procédé | |
| JPS626638B2 (fr) | ||
| KR100668091B1 (ko) | 유리 코팅 및 그 생성 방법 | |
| JPS626746B2 (fr) | ||
| JPS6210269A (ja) | 真空蒸着装置及び薄膜の製造方法 | |
| Ma et al. | The role of ambient gas scattering effect and lead oxide formation in pulsed laser deposition of lead–zirconate–titanate thin films | |
| JP4066101B2 (ja) | 低放射率積層体の製造方法 | |
| JPH05320882A (ja) | 蒸着薄膜の作製法 | |
| EP0656430B2 (fr) | Procédé et appareil pour la codéposition des oxydes métalliques sur film plastiques | |
| KR100258056B1 (ko) | 이중 이온 빔 스퍼터링을 이용한 Sn 타아겟으로부터의 가스센서용 SnO2 박막의 제조방법 | |
| JPH0314906B2 (fr) | ||
| JPS6155237B2 (fr) | ||
| JP3397495B2 (ja) | 有彩色薄膜の製造方法 | |
| JP2507963B2 (ja) | 酸化物薄膜の製造方法 | |
| JPH05209262A (ja) | 膜被覆物の製造方法 | |
| JPH04141909A (ja) | 透明導電膜の製造方法 |