JPS626638B2 - - Google Patents
Info
- Publication number
- JPS626638B2 JPS626638B2 JP18524682A JP18524682A JPS626638B2 JP S626638 B2 JPS626638 B2 JP S626638B2 JP 18524682 A JP18524682 A JP 18524682A JP 18524682 A JP18524682 A JP 18524682A JP S626638 B2 JPS626638 B2 JP S626638B2
- Authority
- JP
- Japan
- Prior art keywords
- deposited
- ion beam
- thin film
- metal
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 144
- 238000010884 ion-beam technique Methods 0.000 claims description 109
- 150000002500 ions Chemical class 0.000 claims description 85
- 238000007740 vapor deposition Methods 0.000 claims description 78
- 229910044991 metal oxide Inorganic materials 0.000 claims description 77
- 150000004706 metal oxides Chemical class 0.000 claims description 77
- 238000004544 sputter deposition Methods 0.000 claims description 77
- 239000001301 oxygen Substances 0.000 claims description 65
- 229910052760 oxygen Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 62
- 239000010408 film Substances 0.000 claims description 57
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 53
- 238000001704 evaporation Methods 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 26
- 230000008020 evaporation Effects 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 19
- 239000012298 atmosphere Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011521 glass Substances 0.000 claims description 10
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 78
- 239000004408 titanium dioxide Substances 0.000 description 37
- 239000010410 layer Substances 0.000 description 27
- 229910052709 silver Inorganic materials 0.000 description 25
- 239000004332 silver Substances 0.000 description 24
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 21
- 238000005468 ion implantation Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 17
- -1 Oxygen ions Chemical class 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000007789 gas Substances 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000002513 implantation Methods 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910001923 silver oxide Inorganic materials 0.000 description 3
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Substances [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000002926 oxygen Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 241001480748 Argas Species 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
Description
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ã§ãããDETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition coating apparatus for metal thin films.
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ãã In recent years, various products have been coated with metals or metal oxides by vapor deposition to improve the characteristics of these products.
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ãã For example, as shown in FIG. 1, a metal oxide 200 is deposited on the surface of a deposition object 100 made of various products to improve the characteristics of the various products depending on their purpose. In other words, when the deposition target 100 is a visible light-transmitting glass body, optical properties, especially low light absorption, high refractive index, and high reflectance, can be improved, and it can be used as a glass that resists heat rays, etc. things, vehicles,
It is used in the glass of refrigerators and other appliances to save energy by reducing the cooling load, and when deposited on incandescent light bulbs, it improves the light emitting efficiency of these light bulbs.
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ã§ããã Further, by coating the insulator with a metal oxide by vapor deposition, it is possible to improve the dielectric constant and insulation properties.
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ç¹æ§åäžãå³ãããšãå¯èœã§ããã Further, by coating the surface of a product made of various materials including metal or plastic with a metal oxide by vapor deposition, it is possible to improve properties such as corrosion resistance, heat resistance, and abrasion resistance.
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ã©ã¹ã®ææ¢ãçšããŒã¿ãšããŠå©çšãããŠããã Further, as shown in FIG. 2, a metal oxide thin film 200a, a metal vapor deposited thin film 2
00b and metal oxide vapor-deposited thin films 200c are successively formed to cover the surface of the object to be vapor-deposited with a multilayer coating. In this way, metal oxide thin film 2
By forming the metal thin film 200b between 00a and 200c in a sandwich pattern, this metal thin film 2
00b can be used as an electrical conductor, and is used, for example, as a transparent conductor for display elements or as a heater for defogging vehicle window glasses.
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ããããšãšãªãã These metal oxide vapor-deposited thin films or metal vapor-deposited thin films will have significantly superior or inferior properties depending on the vapor deposition coating method.
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èŠã§ããã That is, it is important that the metal oxide vapor-deposited thin film 200 has fewer oxygen vacancies, and the smaller the oxygen vacancies, the better the optical properties, dielectric constant, durability, and other properties can be achieved. Further, the metal vapor deposited thin film 200b needs to have good acid resistance in order to obtain improved characteristics such as low absorption of transmitted light, high reflectance of light, and low electrical resistance.
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åã¯èžçºã«ããèžçã«ããè¡ãããŠããã However, conventional methods for depositing metals or metal oxides onto objects have been mainly performed by sputtering or evaporation.
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ã€ãã This sputter deposition is performed in an oxygen atmosphere such as a sputtering gas such as a mixed gas of argon and oxygen, and although it is possible to reduce oxygen vacancies in the metal oxide deposited thin film, the deposition rate is slow. In addition, in order to maintain this film formation rate at an optimum value, delicate gas mixture adjustment had to be made, which was a hassle. Another disadvantage is that active oxygen plasma is generated during sputtering, and this oxygen plasma causes deterioration of various parts of the vapor deposition coating apparatus, such as the ion gauge, rubber packing, or ring.
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æ¬ ç¹ããã€ãã Furthermore, when forming a multi-layered thin film of metal oxide and metal as shown in FIG. 2 by sputter deposition, not only does the formation of a metal oxide thin film suffer from the above-mentioned disadvantages, but also the metal In some cases, this sputter deposition is carried out in an oxygen-containing atmosphere, which has the disadvantage that oxidation occurs during metal deposition, increasing the light absorption rate and electrical resistance of the metal deposited thin film.
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ãŠããã On the other hand, when forming a deposited thin film by evaporating a metal or metal oxide, the material to be evaporated is held in a vapor deposition tank, and the material to be evaporated is heated with a heater or a high-energy electron beam. The vapor-deposited thin film is formed by vapor-depositing vapor onto an object to be vapor-deposited.
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ããããšãå°é£ã§ãããšããæ¬ ç¹ããã€ãã However, in this type of method, for example, when metal oxides are evaporated, the vapor pressures of the metal and oxygen are different, so the proportion of oxygen in the metal oxide is extremely small compared to the metal; Since the process is carried out in an almost vacuum state, oxidation of the deposited area is difficult, making it extremely difficult to form a metal oxide vapor-deposited thin film with a small amount of oxygen vacancies. The disadvantage was that it was difficult to form.
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æäŸããããšã«ããã The present invention has been made in view of the above-mentioned conventional problems, and its purpose is to provide a metal that can improve the characteristics of a thin film, regardless of whether the thin film is formed of a metal oxide or a metal on an object to be deposited. An object of the present invention is to provide a thin film vapor deposition coating device.
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ããããšãç¹åŸŽãšããã In order to achieve the above object, a first apparatus of the present invention includes: a deposition tank that holds an object to be evaporated therein using a holding part; an ion beam irradiation device that irradiates an ion beam toward the object to be evaporated; , the vapor deposition tank has a sputtering device for sputtering a metal or metal oxide onto the surface of the object to be vapor deposited, with a sputtering surface facing the object to be vapor deposited, and the ion beam irradiation device includes: an ion source; , an ion passage tube which guides the ion beam from the ion source to the vapor deposition tank and is provided with a predetermined exhaust system; and an orifice for maintaining a predetermined pressure difference between the evaporation tank and the passage pipe; and a deflector provided near the exit of the ion passage pipe for controlling the irradiation position of the ion beam onto the object to be deposited to a desired position. , the sputtering device and the ion beam irradiation device are controlled separately and independently, and the ion beam is implanted into the vapor deposition portion of the metal or metal oxide film deposited on the object to be vapor-deposited. Coating equipment. Further, a second apparatus of the present invention includes: a vapor deposition tank that holds an object to be deposited therein using a holding part; and an ion beam irradiation device that irradiates an ion beam toward the object to be vapor deposited, the vapor deposition tank The sputtering device sputters a metal or metal oxide onto the surface of the object to be vapor-deposited, with the sputtering surface facing the object to be vapor-deposited; a vapor deposition device that evaporates and deposits on a surface; and the ion beam irradiation device is configured to alternately perform sputter deposition of a metal or metal oxide and vapor deposition of the metal or metal oxide on the object to be vaporized, and the ion beam irradiation device includes an ion source, an ion passage tube that guides the ion beam from the ion source to the vapor deposition tank and is provided with a predetermined exhaust system, and an ion passage tube that is provided at a predetermined position of the ion passage tube and that directs the ion beam to a desired direction. an orifice that narrows the ion beam to a diameter of 1, and maintains a predetermined pressure difference between the evaporation tank and the passage tube, and an orifice that is installed near the exit of the ion passage tube and deflects the irradiation position of the ion beam onto the object to be deposited to a desired position. a deflector for controlling, separately and independently controlling vapor deposition by the sputtering device and evaporator and ion beam irradiation using the ion beam irradiation device, and controlling the vapor deposition by the sputter device and the evaporator and the ion beam irradiation using the ion beam irradiation device, and It is characterized by implanting an ion beam into the vapor deposition area.
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By the sputtering action of the sputtering device and the ion beam irradiation action of the ion beam irradiation device 20, a desired evaporated thin film of metal or metal oxide is formed on the surface of the object to be evaporated 12.
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By supplying RF or DC power to the sputter target 24, sputter deposition of a metal or metal oxide is performed, and a desired thin film of the metal or metal oxide is formed on the object 12 to be deposited.
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The orifice 34 makes it possible to focus the ion beam to a desired diameter and to maintain a pressure difference between the vapor deposition tank 10 and the passage pipe 28.
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§å°ãããã Therefore, according to the apparatus of this embodiment, the ions extracted from the ion source 26 by the ion beam extraction electrode 30 are accelerated and scanned by the ion beam accelerating electrode 32 and the ion beam deflector 36, and are applied to the deposition target 12. Irradiation is applied to a predetermined area.
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8. The interior of the vapor deposition tank 10 is maintained at a low pressure state.
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8b and 38c to lower the pressure of the vapor deposition tank 10, passage pipe 28, and ion source 26 to desired pressures, respectively. In this first embodiment, the pressure of the passage pipe 28 and the ion source 26 is lower than that of the vapor deposition tank 10. become
Then, an inert gas such as argon or xenon is introduced into the vapor deposition tank 10, and a metal oxide is sputter-deposited using a magnetron sputter in this inert gas atmosphere.
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The titanium oxide is evaporated in sputters, and a deposited thin film is formed on the object 12 to be deposited. At this time, a desired voltage is applied to the ion beam extraction electrode 30 and the ion beam accelerating electrode 32, so that the density of the ion beam from the ion source 26 is 10 13 to 10 18 particles/cm 2 ·sec, and the oxygen pressure is An oxygen ion beam set at a high height is extracted and accelerated, and the direction of this oxygen beam is controlled by an ion beam deflector 36. Oxygen ions are then irradiated onto a predetermined portion of the metal oxide evaporation portion formed on the evaporation object 12 with a beam having a desired diameter that is variably set in the range of 10 -4 cm to 1 cm in diameter.
As a result of this, oxygen ions are injected into the vapor deposition area, and as a result, it is possible to form a metal oxide vapor deposited thin film with few oxygen vacancies, that is, a titanium dioxide vapor deposited thin film, and in this example, the glass substrate is transparent to visible light. It becomes possible to form a film that resists heat rays.
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There is almost no increase in the average oxygen concentration (oxygen partial pressure) within 0.
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ã¹ããã¿èžçãè¡ãåŸãã Furthermore, in the first embodiment, since the pressure inside the ion passage tube 28 is lower than that inside the vapor deposition tank 10, oxygen molecules enter the vapor deposition tank 10 through the orifice 34.
Natural intrusion into the interior of the substrate is extremely rare, and therefore good sputter deposition can be performed without adversely affecting sputtering.
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In the case of the embodiment, this is done as follows. In forming this multilayer film, the vapor deposition tank 10, the ion passage tube 2
8, and that the inside of the ion source 26 is maintained at a low pressure and that the density of the ion beam and the diameter of the ion beam can be set within a predetermined range are similar to the first embodiment, but this embodiment is different from the first embodiment. The point is that metal ions, silver ions in this example, are implanted into the ion source 26 in order to form a metal thin film by the ion beam, and in order to perform ion beam film formation, the vapor deposition tank 10 The inside is filled with a mixed gas of inert gas and oxygen.
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äœïŒïŒã«æèãããã The formation of this multilayered thin film consists of a first film forming step in which a metal oxide thin film is formed by sputter deposition in an oxygen-containing atmosphere, and a metal oxide thin film is irradiated with metal ions to oxidize the metal oxide. and a second film forming step of forming a metal thin film in a material metal thin film, in the first film forming step of which,
A metal oxide, in this embodiment, titanium dioxide, is sputter-deposited by the sputtering action of the magnetron sputter source 22, and this evaporated thin film is formed on the object 12 to be evaporated.
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That is, the ion beam extraction electrode 30, the ion beam acceleration electrode 32, and the ion beam deflector 36
By this action, silver ions are irradiated from the ion source 26 onto a predetermined portion of the metal oxide thin film, and the silver ions are implanted into the titanium dioxide vapor deposited portion. As a result, a two-layer thin film consisting of a titanium dioxide vapor-deposited film and a silver thin film is formed on the vapor-deposited body 12.
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ç±ç·ãããžãèã圢æããããšãå¯èœãšãªãã Next, the silver ion irradiation operation is stopped and only sputter deposition of titanium dioxide is performed for a predetermined period of time, thereby forming a three-layer deposited thin film consisting of a titanium dioxide thin film, a silver thin film, and a titanium dioxide thin film on the deposition target 12. This makes it possible to form a multilayer visible light-transmitting heat ray shielding film on a glass substrate.
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ããèèã圢æããããšãå¯èœã§ããã According to this second embodiment, since sputter deposition is performed in an atmosphere containing oxygen, it is possible to reduce oxygen vacancies in the metal oxide deposited thin film, and since the metal thin film is formed by ion beam irradiation implantation, silver Oxidation of the ion thin film is prevented and it is possible to form a thin film with various excellent properties.
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¥ã«ããè¡ãããŠããããã§ããã In this embodiment, the reason why the silver thin film is prevented from oxidizing even though the inside of the vapor deposition tank 10 is exposed to an atmosphere containing oxygen is that the silver thin film is formed by ion implantation.
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ã·ãšã³ã®çµæ確èªãã§ããã In other words, the ions are implanted by irradiating and penetrating the sputter-deposited titanium dioxide vapor deposited film to a predetermined depth. At this implantation site, the ions are protected by the titanium dioxide vapor deposition film and are protected from oxygen in the atmosphere and oxygen plasma. As a result, oxidation of the silver thin film is prevented. Furthermore, it was confirmed by computer simulation of the spectral characteristics that this silver thin film was not oxidized by the oxygen atoms of the titanium dioxide deposited film.
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ãè¯å¥œãªïŒå±€èèã圢æããããšãã§ããã Generally, it is known that strain is generated in a film when ions are implanted into the film, but in this example, the film thickness of silver and titanium dioxide is thin, and the film thickness of titanium dioxide is thin. Since the ion implantation was carried out simultaneously, the occurrence of distortion due to film stress was alleviated, and in this example, the occurrence of the above-mentioned distortion was not observed, and a good three-layer thin film could be formed.
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åãé²æ¢ã§ããã A characteristic feature of the first and second embodiments is that the metal oxide is sputter-deposited using a magnetron sputter type sputter source. Therefore, it is possible to increase the density of the plasma by focusing the plasma generated during sputtering near the target using a magnetic field, thereby preventing the plasma from flowing into the ion source 26 from the evaporation tank 10. Furthermore, by increasing the density of the plasma, passage of the irradiated ions into the plasma is avoided, and the problem that the sputtering effect is obstructed by ion implantation can be prevented.
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ããããšãå¯èœã§ããã In addition, in the first and second embodiments, the ion source 26
Since the operating pressure of the ion source 26 is lower than that of the sputtering device, the pressure of the ion source 26 is lower than the sputtering pressure of the vapor deposition tank 10, and the gas in the vapor deposition tank 10 is ionized in response to the differential pressure between the two. It is possible to naturally discharge the air from the exhaust system 38b through the passage pipe 28. Therefore, for example, in the first and second embodiments, the pressure inside the vapor deposition tank 10 is 2Ã10 -3 to 6Ã10 -3 Torr. Even if the pressure in the passage pipe 28 is 2Ã10 -5 to 6Ã
It is possible to maintain the pressure difference between the vapor deposition tank 10 and the passage pipe 28 so that it can be maintained at 10 -8 Torr,
Furthermore, it is possible to suppress the increase in pressure within the vapor deposition tank 10 that occurs when the ion beam collides with the object 12 to be vapor deposited.
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æããããšãå¯èœãšãªãã Furthermore, as described above, this embodiment device is provided with devices for controlling the ion supply amount of the ion beam, ion acceleration energy, and ion beam pointing direction. In the first and second embodiments, the ion beam density is increased to 10 13 by controlling the energy, that is, controlling the ion concentration in the ion source 26 and controlling the ion beam extraction electrode 30 and the ion beam acceleration electrode 32.
It is possible to set the ion energy in the range of ~10 18 ions/cm 2 ·sec and the ion energy in the range of several 100 eV to several MeV, and by controlling these as desired, the amount of ions implanted into the deposited film can be controlled continuously or intermittently. As shown in FIG. 4, the optical refractive index of the metal oxide thin film can be changed appropriately depending on the distance from the surface. It also becomes possible to form an optical path for guiding light and the like.
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ãå¯èœãšãªãã Similarly, in the case of a multi-bath vapor deposition film, it is possible to change the implantation concentration of metal ions, thereby eliminating the need to separate the boundary between the metal oxide vapor deposited thin film and the metal thin film, as shown in Figure 5. It is possible to continuously change the concentration of metal depending on the distance from the substrate surface, and by forming it in this way, the boundary between the metal oxide thin film and the metal thin film becomes unclear, and this makes it possible to It becomes possible to increase the strength of vapor deposition.
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ããã In the first and second embodiments, the ion supply energy, that is, mainly the ion implantation acceleration voltage, is determined by the ion implantation depth from the surface of the metal oxide deposited thin film,
It is determined by considering the ion implantation amount and its distribution.
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®ãããã On the other hand, when ions are implanted into the surface of a metal oxide deposited film or into a very shallow part, a low-energy ion beam is used to implant the ions, for example, an oxygen ion beam is implanted into the surface of a metal oxide deposited film. In this case, it is possible to supply oxygen to the surface of the metal oxide thin film having an oxygen-deficient structure to be deposited on the substrate of the deposition object 100, thereby increasing the oxygen concentration on the substrate and keeping the sputtering yield of the deposited thin film low. is possible. The oxygen ion implantation conditions for forming this single-layer thin film are particularly taken into consideration, including the sputtering deposition rate and the amount of oxygen vacancies in the deposited film.
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ãå¯èœã§ããã In addition, by controlling the direction of the ion beam, that is, by controlling the ion beam deflector 36, it is possible to irradiate the ion beam uniformly onto the vapor deposition area or to concentrate on a specific area. It is possible to form channels with a concentrated ion concentration or vice versa.
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ãããšå¥œé©ã§ããã For example, as shown in FIG. 6, it is possible to form an optical circuit 300 by forming a mesh-like high refractive index region with a small amount of oxygen vacancies in a metal oxide vapor deposition part, and vice versa. It becomes possible to form an electric circuit by forming a mesh-like electrically conductive region with a large number of electrically conductive regions. Furthermore, in the case of forming a multi-layer vapor deposited thin film of a metal oxide vapor deposited thin film and a metal thin film, it is possible to form passages with a high concentration of silver in the titanium dioxide vapor deposited thin film as shown in FIG. Therefore, it is possible to form an electric circuit 302 by providing this high silver concentration portion vertically and horizontally, and it is suitable to use this circuit 302 in anti-fog glass with a hot wire heater or the like.
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æããã The structure of the method and apparatus for depositing a metal thin film according to the present invention is as described above, and a specific embodiment of the present invention using sputter deposition will be described below.
å®æœäŸ
ã¿ãŒã²ãããšåºæ¿ãšã®è·é¢ïŒ15cm
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èèã®åœ¢æé床ïŒïŒâ«ïŒç§
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10ç§ã®åšæã§å転ããããExample Distance between target and substrate: 15 cm Evaporation object: Silica glass of 5 cm length x 5 cm width x 0.8 mm thickness Target material: Titanium dioxide (TiO 2 ) sintered target with a diameter of 6.7 cm Vapor deposition tank and ion source atmosphere :Argon gas 3x
10 -3 Torr Sputtering power: 500Wã»RF Amount of implanted ions: Oxygen ions (O 2 + ) 1Ã10 15
/sec Acceleration energy: 500 to 1000V Thin film formation rate: 1 Ã
/sec Ion beam diameter: 1 cm diameter on the surface of the evaporator Beam operation method: Scan the entire evaporation area at a cycle of 1 second, while heating the evaporator Alternatively, cooling is not performed, and the object to be evaporated is
It was rotated at a cycle of 10 seconds.
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åãã¿ã³èèãåŸããããResults: A titanium dioxide thin film with a thickness of approximately 1000 Ã
was obtained after 17 minutes of film formation.
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åžåçïŒæ³¢é·5000â«ã§åžåç0.1ïŒ
以äž
å±æçïŒ2.5
é
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åžåçãé«å±æçã«åããŠããã¬ãŒã¶çšå€å±€èå
å°é¡çã®åœ¢æã«æ¥µããŠæå¹ã§ããã Visible light absorption rate: Absorption rate of 0.1% or less at a wavelength of 5000 Ã
Refractive index: 2.5 Amount of oxygen defects: 1% or less (Rutherford backscattering method) The titanium dioxide vapor-deposited thin film of this example was heat treated (in air at 1000°C for 24 hours) Even after this, no change in absorption rate was observed. This vapor-deposited thin film has low absorption and high refractive index, and is extremely effective in forming multilayer reflectors for lasers.
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ãå Žåãæ¯èŒäŸãšããŠç€ºãå®æœäŸãšã®æ¯èŒã«ã
ã€ãŠãã®å¹æãæ確ã«ããã Next, a case in which the main constituent elements of this embodiment are missing will be shown as a comparative example, and the effect will be clarified by comparison with the embodiment.
ãããã®æ¯èŒäŸã¯ããããã¹ããã¿èžçéšã«ã
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žçŽ ã€ãªã³ã®æ³šå
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ããã®ã§ããã All of these comparative examples lack the unique structure of this embodiment, in which oxygen ions are implanted in the sputter deposition portion by irradiation with an oxygen ion beam.
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å²æ°äžã§ã¹ããã¿åœ¢æãããComparative Example Film-forming conditions: The same equipment as in the example was used. Oxygen ion beam irradiation from the ion source was stopped, and a titanium dioxide thin film was sputter-formed in an argon gas atmosphere.
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æèé床ïŒïŒâ«ïŒç§
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žçŽ æ¬ æéïŒïŒãïŒïŒ
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æãããå£ã€ãŠããã®ãç解ãããã Other film-forming conditions were the same as in Examples Film-forming speed: 1 Ã
/sec Visible light absorption rate: Absorption rate 2% or less at a wavelength of 5000 Ã
Refractive index: 2.2 Amount of oxygen vacancies: 1-2% (Rutherford backscattering method) It is understood that in this comparative example, since no oxygen ions were implanted, the amount of oxygen vacancies was large and the optical characteristics were inferior to the results of this example.
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ç¹æ§ãæããŠãããComparative example Film-forming conditions: Sputter deposition of titanium dioxide thin film in an argon-oxygen mixed gas atmosphere (argon:oxygen mixture ratio 90:10) Other conditions were the same as the comparative example Film-forming speed: 0.3 to 0.4 Ã
/sec Visible light absorption rate: absorption rate of 0.1% or less at a film thickness of 1000 Ã
Refractive index: 2.5 The comparative example has a small amount of oxygen vacancies because the mixed gas contains oxygen, and therefore has good optical characteristics.
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æ¬ ç¹ãããã However, since oxygen ion beam irradiation is not performed, the film formation rate is extremely slow, resulting in a lack of productivity.
å®æœäŸ
第ïŒå·¥çšïŒè¢«èžçäœãžã®ïŒé
žåãã¿ã³ã®èžç圢
æå·¥çšãExamples First step: Step of forming titanium dioxide by vapor deposition on the object to be vapor-deposited.
ã¿ãŒã²ãããšè¢«èžçäœéã®è·é¢ïŒ15cm
被èžçäœïŒçžŠïŒcmÃ暪ïŒcmÃåã0.8mmã®ç³è±
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ã¿ãŒã²ããæïŒïŒé
žåãã¿ã³ïŒTiO2ïŒ
ã¹ããã¿é°å²æ°ïŒã¢ã«ãŽã³é
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æèæéïŒïŒåã Distance between target and object to be evaporated: 15cm Object to be evaporated: Silica glass of 5cm length x 5cm width x 0.8mm thickness Target material: Titanium dioxide (TiO 2 ) Sputtering atmosphere: Argon-oxygen mixed gas (mixture ratio of 90 to argon) Sputtering pressure: 3 x 10 -3 Torr Sputtering power: Output 500W/RF Film deposition rate: 1 Ã
/min Film deposition time: 7 minutes.
第ïŒå·¥çš ïŒé žåãã¿ã³èžçéšãžã®éã€ãªã³ã®æ³šå ¥å·¥çšã2nd process Step of implanting silver ions into the titanium dioxide deposited area.
ïŒé
žåãã¿ã³ã®ã¹ããã¿èžçãäžæããããšãª
ãéã€ãªã³ã®æ³šå
¥ãåæã«è¡ã€ããSilver ion implantation was performed simultaneously without interrupting the sputter deposition of titanium dioxide.
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ç§ã®åšæã§å転ããããAmount of implanted ions: 1Ã10 15 silver ions/sec Ion acceleration energy: 500 to 1000 V Ion beam diameter: 1 cm diameter at the evaporation area Ion beam scanning method: Scans the entire evaporation area at a cycle of 1 second Heating the object to be evaporated or Cooling: To ensure uniform film quality without cooling, the entire object to be evaporated was
It rotated with a period of seconds.
ã€ãªã³æ³šå ¥æéïŒïŒå30ç§ãIon implantation time: 3 minutes 30 seconds.
第ïŒå·¥çš ã€ãªã³æ³šå ¥ãäžæ¢ãTiO2ã®æèã®ã¿è¡ããIn the third step, the ion implantation is stopped and only the TiO 2 film is formed.
ã¹ããã¿æéïŒ30ç§ ãã®ä»ã®æ¡ä»¶ã¯ç¬¬ïŒå·¥çšãšåæ§ã§ãããSpatuta time: 30 seconds Other conditions are the same as in the first step.
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TiO2èåïŒ420â«
å±æçïŒ2.4以äž
åžåçïŒæ³¢é·500â«ã§ïŒïŒ
以äžé
žçŽ æ¬ æéïŒïŒ
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éïŒã«ãã€ãŠåžåçã®å€åããŸã€ããã¿ãšãã
ããªãã€ããResults Results of the first step TiO 2 film thickness: 420 Ã
Refractive index: 2.4 or more Absorption rate: 1% or less at wavelength 500 Ã
Oxygen vacancy 1%
Below (backscattering method) It should be noted that no change in absorption rate was observed due to thermal oxidation (in air, 1000°C, 24 hours) after film formation.
第ïŒå·¥çšã®çµæ
éã®èžçèåïŒ150â«
éèžçèã®åºæ¿è¡šé¢ããã®è·é¢ïŒ360â«ã510â«
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žåãã¿
ã³ã®ïŒå±€èãåŸããããResults of the second step: Thickness of the deposited silver film: 150 Ã
Distance of the deposited silver film from the substrate surface: 360 Ã
to 510 Ã
Results after the third step: A three-layer film of titanium dioxide, silver, and titanium dioxide is formed on the glass substrate. Obtained.
第ïŒå±€ïŒé žåãã¿ã³èžçèèã®åãïŒ360⫠第ïŒå±€éèèã®åãïŒ150⫠第ïŒå±€ïŒé žåãã¿ã³èžçèèã®åãïŒ360â« é»å°æ§ïŒçŽïŒÎ©ïŒå¹³æ¹ å åŠç¹æ§ïŒç¬¬ïŒå³ã«ç€ºãéãã§ãããThickness of first layer titanium dioxide vapor deposited thin film: 360à Second layer silver thin film thickness: 150à Thickness of third layer titanium dioxide vapor deposited thin film: 360à Conductivity: Approximately 2Ω/square Optical properties: As shown in FIG.
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ãããAccording to FIG. 8, a titanium dioxide layer with a small amount of oxygen vacancies is obtained, so good visible light transmittance is obtained, and since the silver thin film is prevented from oxidizing, it has high heat ray reflection. (Hei) is made possible.
次ã«æ¬å®æœäŸã«ãããäž»èŠãªæ§æèŠä»¶ãæ¬ ã
ãå Žåãæ¯èŒäŸãšããŠç€ºãå®æœäŸãšã®æ¯èŒã«ã
ã€ãŠãã®å¹æãæ確ã«ããã Next, a case in which the main constituent elements of this embodiment are missing will be shown as a comparative example, and the effect will be clarified by comparison with the embodiment.
ãããã®æ¯èŒã¯ããããã¹ããã¿èžçéšã«ãã
ãéã€ãªã³ã®æ³šå
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§å°ã«ãã
è¡ããšããæ¬å®æœäŸã®ç¹æã®æ§æãæ¬ ãããã®
ã§ããã All of these comparisons lack the unique structure of this embodiment in which silver ion implantation in the sputter deposition area is performed by irradiation with a silver ion beam.
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Agå±€ã®äœæãå®æœäŸã®ã€ãªã³æºãçšããã
ãšãªãAgã¿ãŒã²ããã®DCã¹ããã¿ãçšããä»
ã®æ¡ä»¶ã¯ã»ãŒå®æœäŸãšåæ§
TiO2第ïŒå±€ïŒ360â«ïŒRFã¹ããã¿ïŒ
Agå±€ïŒ150â«ïŒDCã¹ããã¿ïŒ
TiO2第ïŒå±€ïŒ360â«ïŒRFã¹ããã¿ïŒ
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åŠç¹æ§ïŒç¬¬ïŒå³ã«ç€ºãéãã§ãããComparative Example Film-forming conditions and method: The Ag layer was created using DC sputtering with an Ag target without using the ion source of the example, and other conditions were almost the same as in the example. TiO 2 1st layer: 360 Ã
(RF sputtering) Ag layer: 150 Ã
(DC sputter) TiO 2 second layer: 360 Ã
(RF sputter) Results Optical properties: As shown in Figure 9.
é»å°æ§ïŒ200ΩïŒå¹³æ¹
æ¬æ¯èŒäŸïŒã«ãããŠã¯ã¹ããã¿èžçãããéã®
èèã第ïŒå±€åœ¢ææã«ãããïŒé
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èŒãããšå
åŠç¹æ§ããã³é»å°æ§ã極ããŠå£ã€ãŠã
ãããšãç解ãããã Electrical conductivity: 200Ω/square In Comparative Example 1, the sputter-deposited silver thin film was oxidized during the sputter-evaporation of titanium dioxide during the formation of the third layer, and as a result, the optical properties and conductivity were lower than in this example. It is understood that this is extremely inferior.
æ¯èŒäŸ ïŒ
æèæ¡ä»¶ããã³æ¹æ³ïŒïŒé
žåãã¿ã³ã®ã¹ããã¿
ãã¢ã«ã¬ã¹é°å²æ°ïŒïŒÃ10-3TorrïŒã§è¡ã以å€
æ¯èŒäŸãšåæ§ã§ãããComparative Example 2 Film forming conditions and method: Same as Comparative Example except that sputtering of titanium dioxide was performed in an argas atmosphere (3Ã10 â3 Torr).
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žçŽ æ¬ æéã
å€ãããTiO2å±€ã®å±æçãäœãïŒ2.0ã2.3ïŒ
TiO2å±€ã®å¯èŠåžåãå€ãã€ãïŒèå1000â«ã§åž
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çãäœäžããæ¬ ç¹ãçãããResults Optical properties: As shown in Figure 10 In Comparative Example 2, each layer was formed in an oxygen-free atmosphere, so oxidation of the silver thin film was prevented, but oxygen vacancies in the titanium dioxide vapor-deposited thin film The refractive index of the TiO 2 layer is low (2.0-2.3) due to the large amount
The TiO 2 layer had a large amount of visible absorption (absorption rate of 1-20% at a film thickness of 1000 Ã
), which resulted in insufficient antireflection in the visible region, resulting in a large amount of visible absorption and a decrease in visible transmittance. .
ãªãããã®ãããªå
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ãããšããæ¬ ç¹ãããã In addition, in order to prevent such deterioration of optical properties, preliminary treatment is troublesome, such as requiring a conditioning treatment of the titanium dioxide target in advance, such as preliminary sputtering treatment in an argon-oxygen mixed gas. There is a drawback.
ãããäºååŠçãçç¥ãããšæèåæ°ãéãã
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ããšããåŒå®³ãããã If such preliminary treatment is omitted, there is a problem that the quality of the titanium dioxide deposited film gradually deteriorates as the number of times the film is formed increases.
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é«ç¹æ§ã®èžçèèã圢æããããšãã§ããã As mentioned above, in this example, a three-layer deposited thin film of titanium dioxide, silver, and titanium dioxide is formed, but in this example, sputtering of titanium dioxide is performed in an oxygen atmosphere, so The amount of oxygen vacancies in the titanium oxide deposited thin film is small, and since the silver deposited thin film is formed by the implantation action of a silver ion beam, the oxidation effect of the silver deposited thin film is prevented, making it possible to form a deposited thin film with extremely high characteristics.
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ããšãå¯èœã§ããã As explained above, according to the present invention, it is possible to form a metal oxide vapor-deposited thin film with few oxygen vacancies and a metal vapor-deposited thin film that is hardly oxidized on the surface of the object to be vapor-deposited, thereby improving optical properties, dielectric constant, durability, etc. It is possible to form a vapor-deposited thin film with excellent seedability properties.
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ä»ããŠãã®èª¬æãçç¥ããã FIG. 11 shows a third embodiment of the invention in which a multilayer deposited film is formed by alternately performing sputter deposition and evaporation deposition.
The apparatus of the embodiment is shown, and the same members as those of the apparatus of FIG. 3 in the first and second embodiments of the present invention are given the same reference numerals, and the explanation thereof will be omitted.
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眮ïŒïŒãèšããããŠããããšã§ããã A feature of the apparatus shown in FIG. 11 is that an evaporator 42 for evaporating the material to be evaporated 40 is provided near the sputtering apparatus 18.
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Further, a heating device (not shown) is provided to evaporate the material to be evaporated 42 housed in the crucible 44 .
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çèèã圢æããããšãå¯èœã§ããã The heating device is composed of an electric heater such as a heater, or a high-energy electron beam generator installed near the material 40 to be evaporated and heats and evaporates the material 40 to be evaporated. This makes it possible to alternately form evaporation-deposited thin films and sputter-deposited thin films on the surface of the object 12 to be deposited. Therefore, for example, the sputter target 24 and the material to be evaporated 40 are made of different materials,
Sputtering easy material to sputtering gate 24
In addition, it is possible to select materials that are easily evaporated as the material to be evaporated 40, and to form a multilayered thin film with a wide variety of variations through evaporation of these materials.
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Since the formation of the sputter-deposited thin film and the ion irradiation control in the embodiment have been described in detail, their explanation will be omitted, and a specific example of the formation of the ion-implanted layer of the evaporation-deposited thin film in the third embodiment will be shown below.
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A 1 cm x 1 cm area of the object to be deposited was irradiated with an acceleration energy of 1000 eV for 10 minutes.
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ããŠå ç±èžçºãããã(2) Evaporation deposition and ion implantation process Distance between material to be evaporated and substrate: 30 cm Object to be evaporated: Iron alloy 5 cm long x 5 cm wide x 0.8 mm thick Material to be evaporated: Titanium metal (housed in a water-cooled crucible) ) Deposited layer vacuum degree: approximately 1Ã10 8 Torr to 2Ã10 8 Torr Evaporation heating method: Titanium metal was irradiated with an electron beam to evaporate it by heating.
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/sec Ion implantation method: Evaporation of titanium and implantation of nitrogen ions are carried out simultaneously Nitrogen ion implantation conditions: Amount of implanted ions: 1Ã10 15 pieces/cm 2ã»sec Implantation energy: 500eV ion beam Diameter: 1 mmÏ Ion beam scanning area: 1 cm x 1 cm To ensure uniform film quality, the object to be deposited was rotated at a cycle of 50 times/minute.
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瀺ãããŠããã The characteristics of the X-ray photoelectron spectroscopy spectrum of this deposited thin film are shown in Figure 2, and the Auger electron analysis results of the titanium nitride deposited thin film obtained by gradually removing spatter from the titanium nitride deposited thin film are shown in Figure 13. has been done.
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By the method of the embodiment, it is possible to form a homogeneous titanium nitride vapor-deposited thin film, and it is possible to improve the desired characteristics of the object to be vapor-deposited.
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FIG. 1 is a cross-sectional view showing an example in which a single-layer vapor deposited thin film is formed on a vapor-deposited object, FIG. 2 is a cross-sectional view showing an example in which a multi-layer vapor-deposited thin film is formed on a vapor-deposited object, and FIG. 3 is a cross-sectional view showing an example in which a multilayer vapor-deposited thin film is formed on a vapor-deposited object. A configuration diagram showing a metal thin film vapor deposition coating apparatus according to
FIG. 4 is a characteristic diagram showing the relationship between film thickness and refractive index when the oxygen content concentration is changed appropriately according to the film thickness.
Figure 5 is a characteristic diagram showing the relationship between the distance from the surface and the silver atom concentration when the silver concentration is changed appropriately according to the distance from the surface of the metal oxide vapor deposited film, and Figure 6 is the characteristic diagram of the metal oxide vapor deposited film. A perspective view showing an example of controlling the irradiation direction of an oxygen ion beam within the vapor deposition area and forming an optical circuit within this metal oxide vapor-deposited thin film. Figure 7 shows the irradiation direction control of the silver ion beam into the metal oxide vapor deposition area. FIG. 8 is a perspective view showing an example in which an electric circuit is constructed in a metal oxide vapor-deposited thin film by performing the above steps, and FIG. Figure 9 is a characteristic diagram of transmittance and reflectance versus wavelength for a three-layer thin film formed by sputter deposition in an argon atmosphere, and Figure 10 is a three-layer thin film formed in an oxygen-free atmosphere. A characteristic diagram of transmittance and reflectance of a thin film with respect to wavelength. FIG. 11 is a configuration diagram showing a device according to a third embodiment of the present invention. FIG. 12 is a diagram showing a configuration of a device according to a third embodiment of the invention.
FIG. 13 is a characteristic diagram of the X-ray photoelectron spectroscopy spectrum of the titanium nitride vapor-deposited thin film formed by the example, and FIG. 13 is a singular diagram showing the results of Auger electron analysis of the titanium nitride vapor-deposited thin film formed by the second method of the present invention. 10... Vapor deposition tank, 12... Evaporation target, 200,
200a, 200c...Metal oxide vapor deposited thin film, 2
00b...Metal vapor deposited thin film, 14...Holding part, 16
...Sputtering surface, 18... Sputtering device, 20...
... Ion beam irradiation device, 24 ... Sputter target, 40 ... Evaporation target material, 42 ... Evaporation device.
Claims (1)
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èã®èžç被èŠè£ 眮ã[Claims] 1. A vapor deposition tank that holds an object to be deposited inside using a holding part, and an ion beam irradiation device that irradiates an ion beam toward the object to be vapor deposited, The ion beam irradiation device includes a sputtering device that sputters a metal or metal oxide onto the surface of the object to be deposited, with a sputtering surface facing the object to be vaporized, and the ion beam irradiation device includes an ion source and ions directed from the ion source to a vapor deposition tank. An ion passage tube that guides the beam and is provided with a predetermined exhaust system, and an ion passage tube that is provided at a predetermined position of this ion passage tube, focuses the ion beam to a desired diameter, and is between the vapor deposition tank and the passage tube. an orifice that maintains a predetermined pressure difference; and a deflector that is provided near the exit of the ion passage tube and that deflects and controls the irradiation position of the ion beam onto the object to be deposited to a desired position, and the sputtering device and the ion beam 1. A metal thin film vapor deposition coating apparatus, characterized in that an irradiation device is controlled separately and an ion beam is implanted into a vapor deposited portion of a metal or metal oxide film deposited on an object to be vapor deposited. 2. The vapor deposition coating apparatus for metal thin films according to claim 1, wherein the sputtering apparatus is a magnetron type sputtering apparatus that focuses and controls plasma generated during sputtering using a magnetic field. 3. In the apparatus according to claim 1 or 2, the sputtering apparatus is configured to perform sputter deposition of a metal oxide on the surface of an object to be deposited in an inert gas atmosphere to form a metal oxide thin film. , the ion beam irradiation device is configured to irradiate an oxygen ion beam to the metal vapor deposition area, and is characterized in that it simultaneously supplies the sputtered metal and the ion beam to form a metal oxide thin film with few oxygen vacancies. Vapor deposition coating equipment for metal thin films. 4. In the apparatus according to claim 1 or 2, the sputtering apparatus is formed to perform sputter deposition of a metal oxide in an atmosphere containing oxygen to deposit a metal oxide thin film on the surface of the object to be deposited. The ion beam irradiation device is produced to form a metal thin film in the metal oxide thin film by irradiating and implanting metal ions into the metal oxide thin film, and a multilayer film of the metal oxide thin film and the metal thin film is formed on the deposited object. 1. A metal thin film vapor deposition coating device, characterized in that it forms a metal thin film. 5. In the apparatus according to any one of claims 1 to 4, the object to be deposited is a glass substrate, and the metal oxide thin film is formed on the glass substrate as a visible light-transmitting, heat ray-resistant film. Features: Vapor deposition coating equipment for metal thin films. 6. A vapor deposition tank that holds an object to be deposited inside using a holding part, and an ion beam irradiation device that irradiates an ion beam toward the object to be vapor deposited, and the vapor deposition tank is configured to apply a sputtered surface to the object to be vapor deposited. A sputtering device sputter-deposit a metal or metal oxide onto the surface of the object to be vapor deposited, and a vapor deposition device which evaporates and deposits a metal or metal oxide onto the surface of the object to be vapor deposited, with the evaporation surface facing the object to be vapor deposited. an ion beam irradiation device, the ion beam irradiation device includes: an ion source; an ion passage tube that guides an ion beam from a source to a deposition tank and is provided with a predetermined exhaust system; an orifice that maintains a predetermined pressure difference between the ion passage tube and the ion passage tube; and a deflector that is provided near the exit of the ion passage tube and that deflects and controls the irradiation position of the ion beam onto the object to be deposited to a desired position. , separately and independently controlling the vapor deposition by the sputtering device and the evaporator and the ion beam irradiation using the ion beam irradiation device, and implanting the ion beam into the vapor deposited portion of the metal or metal oxide film deposited on the object to be vapor deposited. A metal thin film vapor deposition coating apparatus characterized by: 7. The vapor deposition coating apparatus of claim 6, wherein the sputtering apparatus is a magnetron-type sputtering apparatus that focuses and controls plasma generated during sputtering using a magnetic field.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18524682A JPS5974279A (en) | 1982-10-21 | 1982-10-21 | Method and device for coating thin metallic film by vapor deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18524682A JPS5974279A (en) | 1982-10-21 | 1982-10-21 | Method and device for coating thin metallic film by vapor deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5974279A JPS5974279A (en) | 1984-04-26 |
JPS626638B2 true JPS626638B2 (en) | 1987-02-12 |
Family
ID=16167442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18524682A Granted JPS5974279A (en) | 1982-10-21 | 1982-10-21 | Method and device for coating thin metallic film by vapor deposition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5974279A (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01215969A (en) * | 1988-02-23 | 1989-08-29 | Fujitsu Ltd | Formation of tantalum oxide film |
JPH01244403A (en) * | 1988-03-25 | 1989-09-28 | Nissin Electric Co Ltd | Production of optical film |
JPH01244402A (en) * | 1988-03-25 | 1989-09-28 | Nissin Electric Co Ltd | Production of optical film |
DE19640832C2 (en) * | 1996-10-02 | 2000-08-10 | Fraunhofer Ges Forschung | Process for the production of heat reflecting layer systems |
KR101052036B1 (en) | 2006-05-27 | 2011-07-26 | íêµìë ¥ììë ¥ 죌ìíì¬ | Ceramic coating and ion beam mixing device to improve corrosion resistance at high temperature and method of modifying interface of thin film using same |
KR100877574B1 (en) * | 2006-12-08 | 2009-01-08 | íêµììë ¥ì°êµ¬ì | High temperature and high pressure corrosion resistant process heat exchanger for a nuclear hydrogen production system |
JP5830238B2 (en) * | 2010-11-17 | 2015-12-09 | å€æ²³é»æ°å·¥æ¥æ ªåŒäŒç€Ÿ | Method for producing oxide thin film |
CN103204637B (en) * | 2012-01-12 | 2015-08-12 | äžæµ·åç»ç»çææ¯å·¥äžæéå ¬åž | A kind of transparent conductive oxide coated glass coating wire vacuum system |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4108751A (en) * | 1977-06-06 | 1978-08-22 | King William J | Ion beam implantation-sputtering |
JPS55110028A (en) * | 1979-02-16 | 1980-08-25 | Seiko Epson Corp | Apparatus for vacuum evaporation having evaporation source for ion beam sputtering |
JPS57174459A (en) * | 1981-04-21 | 1982-10-27 | Namiki Precision Jewel Co Ltd | Formation of thin film |
-
1982
- 1982-10-21 JP JP18524682A patent/JPS5974279A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5974279A (en) | 1984-04-26 |
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