JPS626338B2 - - Google Patents
Info
- Publication number
- JPS626338B2 JPS626338B2 JP15276381A JP15276381A JPS626338B2 JP S626338 B2 JPS626338 B2 JP S626338B2 JP 15276381 A JP15276381 A JP 15276381A JP 15276381 A JP15276381 A JP 15276381A JP S626338 B2 JPS626338 B2 JP S626338B2
- Authority
- JP
- Japan
- Prior art keywords
- composition ratio
- substrate
- epitaxial layer
- epitaxial
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000155 melt Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 6
- 238000010583 slow cooling Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152763A JPS5853826A (ja) | 1981-09-25 | 1981-09-25 | 液相エピタキシヤル成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56152763A JPS5853826A (ja) | 1981-09-25 | 1981-09-25 | 液相エピタキシヤル成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5853826A JPS5853826A (ja) | 1983-03-30 |
| JPS626338B2 true JPS626338B2 (fr) | 1987-02-10 |
Family
ID=15547610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56152763A Granted JPS5853826A (ja) | 1981-09-25 | 1981-09-25 | 液相エピタキシヤル成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5853826A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166186A (ja) * | 1985-01-18 | 1986-07-26 | Oki Electric Ind Co Ltd | 半導体光素子 |
| JPS61264767A (ja) * | 1985-05-20 | 1986-11-22 | Oki Electric Ind Co Ltd | 発光素子 |
| JP2567698B2 (ja) * | 1989-04-04 | 1996-12-25 | シャープ株式会社 | 映像信号処理回路 |
| US5247353A (en) * | 1989-11-08 | 1993-09-21 | Samsung Co., Ltd. | Motion detection system for high definition television receiver |
-
1981
- 1981-09-25 JP JP56152763A patent/JPS5853826A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5853826A (ja) | 1983-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3632431A (en) | Method of crystallizing a binary semiconductor compound | |
| US3960618A (en) | Epitaxial growth process for compound semiconductor crystals in liquid phase | |
| JPS626338B2 (fr) | ||
| Nishinaga et al. | Studies of LPE ripple based on morphological stability theory | |
| US4500367A (en) | LPE Growth on group III-V compound semiconductor substrates containing phosphorus | |
| JPS6235260B2 (fr) | ||
| US5223079A (en) | Forming thin liquid phase epitaxial layers | |
| JPS58156598A (ja) | 結晶成長法 | |
| JP4211897B2 (ja) | 液相エピタキシャル成長方法 | |
| US4620854A (en) | Method of preparing indium ingots | |
| US4566934A (en) | Cleaning technique for LPE melt ingots | |
| KR0156016B1 (ko) | 적외선 다이오우드용 갈륨비소(GaAs) 웨이퍼의 고도핑(doping) 성장방법 | |
| JP2538009B2 (ja) | 液相エピキタシャル成長方法 | |
| JP3151277B2 (ja) | 液相エピタキシャル成長法 | |
| JPH04254321A (ja) | 液相エピタキシャル成長方法 | |
| Subramanian et al. | Liquid‐phase epitaxial growth of smooth and thin layers of GaAs on nominally oriented substrates | |
| JP3202405B2 (ja) | エピタキシャル成長方法 | |
| JPS6021894A (ja) | 液相エピタキシヤル成長方法 | |
| Gillessen et al. | Temperature Gradient Solution Growth | |
| SU639358A1 (ru) | Способ получени р-п структур | |
| RU2072584C1 (ru) | Способ локальной жидкостной эпитаксии | |
| JPS59128298A (ja) | 液相エピタキシヤル成長法 | |
| JP3557690B2 (ja) | 結晶成長方法 | |
| JPH0231492B2 (fr) | ||
| JPH02107590A (ja) | 半導体結晶成長装置 |