JPS6262063B2 - - Google Patents
Info
- Publication number
- JPS6262063B2 JPS6262063B2 JP54044809A JP4480979A JPS6262063B2 JP S6262063 B2 JPS6262063 B2 JP S6262063B2 JP 54044809 A JP54044809 A JP 54044809A JP 4480979 A JP4480979 A JP 4480979A JP S6262063 B2 JPS6262063 B2 JP S6262063B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- impurity concentration
- collector
- high impurity
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4480979A JPS55138270A (en) | 1979-04-12 | 1979-04-12 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4480979A JPS55138270A (en) | 1979-04-12 | 1979-04-12 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138270A JPS55138270A (en) | 1980-10-28 |
JPS6262063B2 true JPS6262063B2 (en, 2012) | 1987-12-24 |
Family
ID=12701749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4480979A Granted JPS55138270A (en) | 1979-04-12 | 1979-04-12 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138270A (en, 2012) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3334168B2 (ja) * | 1991-09-24 | 2002-10-15 | 松下電器産業株式会社 | 半導体集積回路装置の製造方法 |
-
1979
- 1979-04-12 JP JP4480979A patent/JPS55138270A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55138270A (en) | 1980-10-28 |
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