JPS6262063B2 - - Google Patents

Info

Publication number
JPS6262063B2
JPS6262063B2 JP54044809A JP4480979A JPS6262063B2 JP S6262063 B2 JPS6262063 B2 JP S6262063B2 JP 54044809 A JP54044809 A JP 54044809A JP 4480979 A JP4480979 A JP 4480979A JP S6262063 B2 JPS6262063 B2 JP S6262063B2
Authority
JP
Japan
Prior art keywords
region
impurity concentration
collector
high impurity
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54044809A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55138270A (en
Inventor
Akio Kashiwanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP4480979A priority Critical patent/JPS55138270A/ja
Publication of JPS55138270A publication Critical patent/JPS55138270A/ja
Publication of JPS6262063B2 publication Critical patent/JPS6262063B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65Integrated injection logic

Landscapes

  • Logic Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP4480979A 1979-04-12 1979-04-12 Semiconductor integrated circuit device Granted JPS55138270A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4480979A JPS55138270A (en) 1979-04-12 1979-04-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4480979A JPS55138270A (en) 1979-04-12 1979-04-12 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS55138270A JPS55138270A (en) 1980-10-28
JPS6262063B2 true JPS6262063B2 (en, 2012) 1987-12-24

Family

ID=12701749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4480979A Granted JPS55138270A (en) 1979-04-12 1979-04-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS55138270A (en, 2012)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334168B2 (ja) * 1991-09-24 2002-10-15 松下電器産業株式会社 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
JPS55138270A (en) 1980-10-28

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