JPS6262056B2 - - Google Patents

Info

Publication number
JPS6262056B2
JPS6262056B2 JP55178504A JP17850480A JPS6262056B2 JP S6262056 B2 JPS6262056 B2 JP S6262056B2 JP 55178504 A JP55178504 A JP 55178504A JP 17850480 A JP17850480 A JP 17850480A JP S6262056 B2 JPS6262056 B2 JP S6262056B2
Authority
JP
Japan
Prior art keywords
aluminum
metal
tantalum
opening
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55178504A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57102053A (en
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP17850480A priority Critical patent/JPS57102053A/ja
Publication of JPS57102053A publication Critical patent/JPS57102053A/ja
Publication of JPS6262056B2 publication Critical patent/JPS6262056B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP17850480A 1980-12-17 1980-12-17 Semiconductor device Granted JPS57102053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17850480A JPS57102053A (en) 1980-12-17 1980-12-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17850480A JPS57102053A (en) 1980-12-17 1980-12-17 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS57102053A JPS57102053A (en) 1982-06-24
JPS6262056B2 true JPS6262056B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-12-24

Family

ID=16049613

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17850480A Granted JPS57102053A (en) 1980-12-17 1980-12-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57102053A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187759U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-05-25 1988-12-01
JPH0238552U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-09-06 1990-03-14
JPH03172656A (ja) * 1989-11-30 1991-07-26 Nissan Motor Co Ltd Ｖベルト式無段変速機の可動ディスク

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246559A (ja) * 1985-08-26 1987-02-28 Tech Res & Dev Inst Of Japan Def Agency 撮像デバイス用電極の製造方法
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4943574A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-08-30 1974-04-24

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63187759U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1987-05-25 1988-12-01
JPH0238552U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1988-09-06 1990-03-14
JPH03172656A (ja) * 1989-11-30 1991-07-26 Nissan Motor Co Ltd Ｖベルト式無段変速機の可動ディスク

Also Published As

Publication number Publication date
JPS57102053A (en) 1982-06-24

Similar Documents

Publication Publication Date Title
US4716131A (en) Method of manufacturing semiconductor device having polycrystalline silicon layer with metal silicide film
US3456335A (en) Contacting arrangement for solidstate components
JPS6173370A (ja) 半導体装置及びその製造方法
JPS61142739A (ja) 半導体装置の製造方法
US3237271A (en) Method of fabricating semiconductor devices
US5030588A (en) Method of making semiconductor device with film resistor
JPH07120653B2 (ja) モノリシック集積回路の製造方法
JPS58116764A (ja) 半導体装置の製造方法
JPS6262056B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH07115175A (ja) 半導体装置
JPS61174767A (ja) 半導体素子電極
JPS6381948A (ja) 多層配線半導体装置
JPS5821821B2 (ja) ハンドウタイソウチノデンキヨクケイセイホウホウ
JPH01168050A (ja) 積層型半導体装置
JPS5873136A (ja) 半導体デバイスの製造方法
JP3413653B2 (ja) 半導体装置
JP2874216B2 (ja) 半導体装置およびその製造方法
JP3337758B2 (ja) 半導体装置の製造方法
JPS6143855B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2867537B2 (ja) 半導体集積回路装置の製造方法
JP2755263B2 (ja) 半導体装置の製造方法
JP3039163B2 (ja) 半導体装置の製造方法
JPH0440858B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS63202040A (ja) 半導体装置の製造方法
JPH04288834A (ja) 半導体装置の製造方法