JPS6258530B2 - - Google Patents

Info

Publication number
JPS6258530B2
JPS6258530B2 JP55139582A JP13958280A JPS6258530B2 JP S6258530 B2 JPS6258530 B2 JP S6258530B2 JP 55139582 A JP55139582 A JP 55139582A JP 13958280 A JP13958280 A JP 13958280A JP S6258530 B2 JPS6258530 B2 JP S6258530B2
Authority
JP
Japan
Prior art keywords
metal wiring
semiconductor chip
insulating film
resin
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55139582A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5763831A (en
Inventor
Kimyoshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13958280A priority Critical patent/JPS5763831A/ja
Publication of JPS5763831A publication Critical patent/JPS5763831A/ja
Publication of JPS6258530B2 publication Critical patent/JPS6258530B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP13958280A 1980-10-06 1980-10-06 Semiconductor device Granted JPS5763831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13958280A JPS5763831A (en) 1980-10-06 1980-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958280A JPS5763831A (en) 1980-10-06 1980-10-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5763831A JPS5763831A (en) 1982-04-17
JPS6258530B2 true JPS6258530B2 (enrdf_load_stackoverflow) 1987-12-07

Family

ID=15248611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958280A Granted JPS5763831A (en) 1980-10-06 1980-10-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5763831A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0481336U (enrdf_load_stackoverflow) * 1990-11-26 1992-07-15

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117633A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 半導体装置
JPH0783075B2 (ja) * 1986-03-14 1995-09-06 三菱電機株式会社 半導体装置の製造方法
JP6176817B2 (ja) * 2011-10-17 2017-08-09 ローム株式会社 チップダイオードおよびダイオードパッケージ

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5258469A (en) * 1975-11-10 1977-05-13 Hitachi Ltd Resin-molded type semiconductor device
JPS5352359A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Resin mold type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0481336U (enrdf_load_stackoverflow) * 1990-11-26 1992-07-15

Also Published As

Publication number Publication date
JPS5763831A (en) 1982-04-17

Similar Documents

Publication Publication Date Title
JP2978861B2 (ja) モールドｂｇａ型半導体装置及びその製造方法
US5084752A (en) Semiconductor device having bonding pad comprising buffer layer
US6605522B1 (en) Method of manufacturing a semiconductor device having a protruding bump electrode
US4099200A (en) Package for semiconductor beam lead devices
EP0407933A2 (en) Resin sealed semiconductor device with improved thermal stress resistance
JP2924840B2 (ja) Ｔａｐｅ−ＢＧＡタイプの半導体装置
US20050110128A1 (en) Highly reliable stack type semiconductor package
KR100403619B1 (ko) 열적/기계적 스트레스에 저항성이 강한 반도체 소자의 본드패드 및 그 형성방법
JPS59191353A (ja) 多層配線構造を有する電子装置
US4558346A (en) Highly reliable hermetically sealed package for a semiconductor device
JPS6258530B2 (enrdf_load_stackoverflow)
KR102371636B1 (ko) 양면 기판 반도체 제조 방법
US3735208A (en) Thermal fatigue lead-soldered semiconductor device
EP0902468B1 (en) Resin-sealed semiconductor device and method of manufacturing the device
JPS62193263A (ja) 樹脂封止型半導体装置
US5043793A (en) Semiconductor device with stress relief coating at the periphery of the device
TW200910540A (en) Package structure and manufacturing method thereof
JPS615561A (ja) 半導体装置
JPH02105446A (ja) 混成集積回路
JPH11135536A (ja) 半導体装置及びその製造方法
JPS6118157A (ja) 半導体装置
KR20030032465A (ko) 플립 칩 패드 및 그 제조방법
JPS63237552A (ja) 半導体装置
JPS63202030A (ja) 半導体チツプ
JPH11176882A (ja) 半導体素子を含む電子回路装置