JPS6257260B2 - - Google Patents

Info

Publication number
JPS6257260B2
JPS6257260B2 JP56141893A JP14189381A JPS6257260B2 JP S6257260 B2 JPS6257260 B2 JP S6257260B2 JP 56141893 A JP56141893 A JP 56141893A JP 14189381 A JP14189381 A JP 14189381A JP S6257260 B2 JPS6257260 B2 JP S6257260B2
Authority
JP
Japan
Prior art keywords
wiring
type
power supply
iccs
type well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56141893A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5843558A (ja
Inventor
Koji Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56141893A priority Critical patent/JPS5843558A/ja
Publication of JPS5843558A publication Critical patent/JPS5843558A/ja
Publication of JPS6257260B2 publication Critical patent/JPS6257260B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56141893A 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置 Granted JPS5843558A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56141893A JPS5843558A (ja) 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56141893A JPS5843558A (ja) 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5843558A JPS5843558A (ja) 1983-03-14
JPS6257260B2 true JPS6257260B2 (zh) 1987-11-30

Family

ID=15302611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56141893A Granted JPS5843558A (ja) 1981-09-09 1981-09-09 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5843558A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225698A (ja) * 1985-07-26 1987-02-03 鉄建建設株式会社 シ−ルド掘進機
JPH0340392U (zh) * 1989-08-28 1991-04-18

Also Published As

Publication number Publication date
JPS5843558A (ja) 1983-03-14

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