JPS6257259A - 発光半導体素子 - Google Patents
発光半導体素子Info
- Publication number
- JPS6257259A JPS6257259A JP60197915A JP19791585A JPS6257259A JP S6257259 A JPS6257259 A JP S6257259A JP 60197915 A JP60197915 A JP 60197915A JP 19791585 A JP19791585 A JP 19791585A JP S6257259 A JPS6257259 A JP S6257259A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- type
- semiconductor
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 9
- 230000010355 oscillation Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000005253 cladding Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60197915A JPS6257259A (ja) | 1985-09-06 | 1985-09-06 | 発光半導体素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60197915A JPS6257259A (ja) | 1985-09-06 | 1985-09-06 | 発光半導体素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6257259A true JPS6257259A (ja) | 1987-03-12 |
| JPH0521354B2 JPH0521354B2 (https=) | 1993-03-24 |
Family
ID=16382385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60197915A Granted JPS6257259A (ja) | 1985-09-06 | 1985-09-06 | 発光半導体素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6257259A (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186684A (ja) * | 1988-01-14 | 1989-07-26 | Nec Corp | 半導体光メモリ |
| JPH02155263A (ja) * | 1988-12-07 | 1990-06-14 | Nec Corp | 半導体光メモリ |
| WO1999056358A1 (en) * | 1998-04-27 | 1999-11-04 | Wisconsin Alumni Research Foundation | Narrow spectral width high power distributed feedback semiconductor lasers |
| JP2015084391A (ja) * | 2013-10-25 | 2015-04-30 | 富士ゼロックス株式会社 | 半導体発光素子、光源ヘッド、及び画像形成装置 |
-
1985
- 1985-09-06 JP JP60197915A patent/JPS6257259A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01186684A (ja) * | 1988-01-14 | 1989-07-26 | Nec Corp | 半導体光メモリ |
| JPH02155263A (ja) * | 1988-12-07 | 1990-06-14 | Nec Corp | 半導体光メモリ |
| WO1999056358A1 (en) * | 1998-04-27 | 1999-11-04 | Wisconsin Alumni Research Foundation | Narrow spectral width high power distributed feedback semiconductor lasers |
| US6195381B1 (en) | 1998-04-27 | 2001-02-27 | Wisconsin Alumni Research Foundation | Narrow spectral width high-power distributed feedback semiconductor lasers |
| US6363092B1 (en) | 1998-04-27 | 2002-03-26 | Wisconsin Alumni Research Foundation | Narrow spectral width high power distributed feedback semiconductor lasers |
| JP2015084391A (ja) * | 2013-10-25 | 2015-04-30 | 富士ゼロックス株式会社 | 半導体発光素子、光源ヘッド、及び画像形成装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0521354B2 (https=) | 1993-03-24 |
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