JPS6257103B2 - - Google Patents

Info

Publication number
JPS6257103B2
JPS6257103B2 JP55048084A JP4808480A JPS6257103B2 JP S6257103 B2 JPS6257103 B2 JP S6257103B2 JP 55048084 A JP55048084 A JP 55048084A JP 4808480 A JP4808480 A JP 4808480A JP S6257103 B2 JPS6257103 B2 JP S6257103B2
Authority
JP
Japan
Prior art keywords
laser
annealing
film
present
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55048084A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56144544A (en
Inventor
Yukio Tanuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP4808480A priority Critical patent/JPS56144544A/ja
Publication of JPS56144544A publication Critical patent/JPS56144544A/ja
Publication of JPS6257103B2 publication Critical patent/JPS6257103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP4808480A 1980-04-14 1980-04-14 Manufacture of semiconductor device Granted JPS56144544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4808480A JPS56144544A (en) 1980-04-14 1980-04-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4808480A JPS56144544A (en) 1980-04-14 1980-04-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56144544A JPS56144544A (en) 1981-11-10
JPS6257103B2 true JPS6257103B2 (en:Method) 1987-11-30

Family

ID=12793451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4808480A Granted JPS56144544A (en) 1980-04-14 1980-04-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56144544A (en:Method)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768033A (en) * 1980-10-16 1982-04-26 Toshiba Corp Manufacture of semiconductor device
JP3066967B2 (ja) * 1988-05-18 2000-07-17 ソニー株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS56144544A (en) 1981-11-10

Similar Documents

Publication Publication Date Title
US4292091A (en) Method of producing semiconductor devices by selective laser irradiation and oxidation
JPH0529133B2 (en:Method)
US4098618A (en) Method of manufacturing semiconductor devices in which oxide regions are formed by an oxidation mask disposed directly on a substrate damaged by ion implantation
JPH01187814A (ja) 薄膜半導体装置の製造方法
JPS6359251B2 (en:Method)
KR970013198A (ko) 반도체 소자의 소자분리절연막 형성방법
JPS639371B2 (en:Method)
JPS6257103B2 (en:Method)
JPH0799335A (ja) 半導体膜の除去加工方法及び光起電力素子の製造方法
JP3104080B2 (ja) 半導体基体の処理方法
JPS59182529A (ja) 半導体層のパタ−ン形成方法
US4372990A (en) Retaining wall technique to maintain physical shape of material during transient radiation annealing
JPS5839014A (ja) 半導体装置の製造方法
JPS59126634A (ja) パタ−ン形成方法
JPH0410739B2 (en:Method)
JPH09133928A (ja) 液晶表示装置用薄膜トランジスタ基板およびその製造方法
JPH023539B2 (en:Method)
JPS6116530A (ja) 半導体装置の製造方法
JPS6127900B2 (en:Method)
JPH01138749A (ja) 半導体装置の製造方法
JPH0650739B2 (ja) 半導体装置のゲッタリング方法
KR0124637B1 (ko) 반도체소자의 격리막 형성방법
JPS62210627A (ja) 半導体ウエハの製造方法
JPS60216555A (ja) 半導体装置の製造方法
JPS5837983B2 (ja) 半導体基板の処理方法