JPS6256675B2 - - Google Patents
Info
- Publication number
- JPS6256675B2 JPS6256675B2 JP58008774A JP877483A JPS6256675B2 JP S6256675 B2 JPS6256675 B2 JP S6256675B2 JP 58008774 A JP58008774 A JP 58008774A JP 877483 A JP877483 A JP 877483A JP S6256675 B2 JPS6256675 B2 JP S6256675B2
- Authority
- JP
- Japan
- Prior art keywords
- junction
- damping
- disposed
- josephson
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000013016 damping Methods 0.000 claims description 30
- 239000002887 superconductor Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 15
- 239000010931 gold Substances 0.000 description 6
- 230000007257 malfunction Effects 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- GPYPVKIFOKLUGD-UHFFFAOYSA-N gold indium Chemical class [In].[Au] GPYPVKIFOKLUGD-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58008774A JPS59135782A (ja) | 1983-01-24 | 1983-01-24 | ジヨセフソン集積回路素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58008774A JPS59135782A (ja) | 1983-01-24 | 1983-01-24 | ジヨセフソン集積回路素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59135782A JPS59135782A (ja) | 1984-08-04 |
| JPS6256675B2 true JPS6256675B2 (enrdf_load_html_response) | 1987-11-26 |
Family
ID=11702231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58008774A Granted JPS59135782A (ja) | 1983-01-24 | 1983-01-24 | ジヨセフソン集積回路素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59135782A (enrdf_load_html_response) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62214681A (ja) * | 1986-03-14 | 1987-09-21 | Nec Corp | ジヨセフソンゲ−ト |
| US6642608B1 (en) * | 2002-07-31 | 2003-11-04 | Northrop Grumman Corporation | MoNx resistor for superconductor integrated circuit |
-
1983
- 1983-01-24 JP JP58008774A patent/JPS59135782A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59135782A (ja) | 1984-08-04 |