JPS6256667B2 - - Google Patents

Info

Publication number
JPS6256667B2
JPS6256667B2 JP56109796A JP10979681A JPS6256667B2 JP S6256667 B2 JPS6256667 B2 JP S6256667B2 JP 56109796 A JP56109796 A JP 56109796A JP 10979681 A JP10979681 A JP 10979681A JP S6256667 B2 JPS6256667 B2 JP S6256667B2
Authority
JP
Japan
Prior art keywords
diffusion region
contact
contact holes
pair
resistance value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56109796A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5810854A (ja
Inventor
Kenji Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56109796A priority Critical patent/JPS5810854A/ja
Publication of JPS5810854A publication Critical patent/JPS5810854A/ja
Publication of JPS6256667B2 publication Critical patent/JPS6256667B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/43Resistors having PN junctions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56109796A 1981-07-13 1981-07-13 半導体拡散抵抗 Granted JPS5810854A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56109796A JPS5810854A (ja) 1981-07-13 1981-07-13 半導体拡散抵抗

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56109796A JPS5810854A (ja) 1981-07-13 1981-07-13 半導体拡散抵抗

Publications (2)

Publication Number Publication Date
JPS5810854A JPS5810854A (ja) 1983-01-21
JPS6256667B2 true JPS6256667B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=14519432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56109796A Granted JPS5810854A (ja) 1981-07-13 1981-07-13 半導体拡散抵抗

Country Status (1)

Country Link
JP (1) JPS5810854A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5810854A (ja) 1983-01-21

Similar Documents

Publication Publication Date Title
US4697201A (en) Power MOS FET with decreased resistance in the conducting state
JPS6256667B2 (enrdf_load_stackoverflow)
US5204735A (en) High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
JPH0231426A (ja) バイポーラトランジスタ
JP2504498B2 (ja) 半導体装置
JPS59143358A (ja) 半導体薄膜抵抗素子
JPS63229744A (ja) 半導体装置
JPS61191061A (ja) 半導体抵抗装置
JPS6350054A (ja) 半導体集積回路装置
JPS61216356A (ja) 半導体抵抗
JP2710356B2 (ja) 半導体装置
JPH04361566A (ja) 半導体集積回路
JPS593866B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPS5826177B2 (ja) 半導体装置の製造方法
JPH01175768A (ja) 半導体装置
JPS6148957A (ja) Mosキヤパシタの製造方法
JPH03126229A (ja) トランジスタ
JPS59130473A (ja) 半導体素子
JPS59139664A (ja) 半導体集積回路装置
JPS6124827B2 (enrdf_load_stackoverflow)
JPH07202167A (ja) 半導体装置
JPS60143645A (ja) 半導体装置
JPH0616545B2 (ja) 半導体領域の形成方法
JPS63272065A (ja) 半導体装置
JPH0385758A (ja) 半導体抵抗器