JPS6255700B2 - - Google Patents
Info
- Publication number
- JPS6255700B2 JPS6255700B2 JP53086095A JP8609578A JPS6255700B2 JP S6255700 B2 JPS6255700 B2 JP S6255700B2 JP 53086095 A JP53086095 A JP 53086095A JP 8609578 A JP8609578 A JP 8609578A JP S6255700 B2 JPS6255700 B2 JP S6255700B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sputtering method
- insulator
- bias sputtering
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513904A JPS5513904A (en) | 1980-01-31 |
| JPS6255700B2 true JPS6255700B2 (enExample) | 1987-11-20 |
Family
ID=13877141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8609578A Granted JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513904A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4374011A (en) * | 1981-05-08 | 1983-02-15 | Fairchild Camera & Instrument Corp. | Process for fabricating non-encroaching planar insulating regions in integrated circuit structures |
| JPS583248A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | バイポ−ラ型半導体装置の製造方法 |
| JPS6070741A (ja) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | 素子間分離方法 |
| JPS6294955A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 素子分離方法 |
| WO2007000808A1 (ja) * | 2005-06-28 | 2007-01-04 | Spansion Llc | 半導体装置およびその製造方法 |
-
1978
- 1978-07-17 JP JP8609578A patent/JPS5513904A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5513904A (en) | 1980-01-31 |
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