JPS6255309B2 - - Google Patents

Info

Publication number
JPS6255309B2
JPS6255309B2 JP57142847A JP14284782A JPS6255309B2 JP S6255309 B2 JPS6255309 B2 JP S6255309B2 JP 57142847 A JP57142847 A JP 57142847A JP 14284782 A JP14284782 A JP 14284782A JP S6255309 B2 JPS6255309 B2 JP S6255309B2
Authority
JP
Japan
Prior art keywords
well
region
conductivity type
well region
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57142847A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5932163A (ja
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57142847A priority Critical patent/JPS5932163A/ja
Publication of JPS5932163A publication Critical patent/JPS5932163A/ja
Publication of JPS6255309B2 publication Critical patent/JPS6255309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57142847A 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路 Granted JPS5932163A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57142847A JPS5932163A (ja) 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57142847A JPS5932163A (ja) 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路

Publications (2)

Publication Number Publication Date
JPS5932163A JPS5932163A (ja) 1984-02-21
JPS6255309B2 true JPS6255309B2 (cg-RX-API-DMAC7.html) 1987-11-19

Family

ID=15324991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57142847A Granted JPS5932163A (ja) 1982-08-18 1982-08-18 Ｃｍｏｓ集積回路

Country Status (1)

Country Link
JP (1) JPS5932163A (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4683488A (en) * 1984-03-29 1987-07-28 Hughes Aircraft Company Latch-up resistant CMOS structure for VLSI including retrograded wells
JPH0714005B2 (ja) * 1984-06-06 1995-02-15 ソニー株式会社 半導体装置
US4771014A (en) * 1987-09-18 1988-09-13 Sgs-Thomson Microelectronics, Inc. Process for manufacturing LDD CMOS devices
JPH0298168A (ja) * 1988-10-04 1990-04-10 Nec Corp 半導体装置
JP3386101B2 (ja) * 1996-08-29 2003-03-17 シャープ株式会社 半導体装置の製造方法
KR100415085B1 (ko) * 2001-06-28 2004-01-13 주식회사 하이닉스반도체 래치업을 방지할 수 있는 반도체장치의 제조방법
JP6006918B2 (ja) 2011-06-06 2016-10-12 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法、及び電子装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3944949A (en) * 1974-11-18 1976-03-16 Ampex Corporation Frequency modulator
JPS5480091A (en) * 1977-12-08 1979-06-26 Nec Corp Manufacture of complementary field effect semiconductor device
JPS55154748A (en) * 1979-05-23 1980-12-02 Toshiba Corp Complementary mos semiconductor device

Also Published As

Publication number Publication date
JPS5932163A (ja) 1984-02-21

Similar Documents

Publication Publication Date Title
EP1543546B1 (en) Process for fabricating an isolated field effect transistor in an epi-less substrate
US6989309B2 (en) High voltage MOS transistor with up-retro well by providing dopant in an epitaxial layer
US5338696A (en) Method of fabricating BiCMOS device
KR100275962B1 (ko) 반도체장치 및 그의 제조방법_
US7268394B2 (en) JFET structure for integrated circuit and fabrication method
US6352887B1 (en) Merged bipolar and CMOS circuit and method
JPH0315346B2 (cg-RX-API-DMAC7.html)
KR20020062200A (ko) 반도체 장치 및 그 제조 방법
US10026730B2 (en) Single mask level including a resistor and a through-gate implant
JP2006173602A (ja) Ｃｍｏｓ工程と統合されることができる高い利得を有するバイポーラ接合トランジスタ及びその形成方法
US5107321A (en) Interconnect method for semiconductor devices
US5231042A (en) Formation of silicide contacts using a sidewall oxide process
US6879007B2 (en) Low volt/high volt transistor
US8022506B2 (en) SOI device with more immunity from substrate voltage
US6987039B2 (en) Forming lateral bipolar junction transistor in CMOS flow
US4724221A (en) High-speed, low-power-dissipation integrated circuits
JPH04239760A (ja) 半導体装置の製造法
US7667295B2 (en) Semiconductor device
JPS6255309B2 (cg-RX-API-DMAC7.html)
KR0139773B1 (ko) 반도체 집적 회로 장치 및 그 제조 방법
KR100922557B1 (ko) Ｃｍｏｓ 트랜지스터 및 그 제조 방법
US20070170517A1 (en) CMOS devices adapted to reduce latchup and methods of manufacturing the same
JPS58170048A (ja) 半導体装置
JP2001060634A (ja) 半導体装置およびその製造方法
US6337252B1 (en) Semiconductor device manufacturing method