JPS6254081A - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPS6254081A JPS6254081A JP19341985A JP19341985A JPS6254081A JP S6254081 A JPS6254081 A JP S6254081A JP 19341985 A JP19341985 A JP 19341985A JP 19341985 A JP19341985 A JP 19341985A JP S6254081 A JPS6254081 A JP S6254081A
- Authority
- JP
- Japan
- Prior art keywords
- bell jar
- cooling fluid
- nozzle
- vapor phase
- inner bell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012809 cooling fluid Substances 0.000 claims abstract description 44
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 230000001154 acute effect Effects 0.000 claims abstract description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 239000010453 quartz Substances 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000001816 cooling Methods 0.000 abstract description 5
- 230000001965 increasing effect Effects 0.000 abstract description 5
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract description 5
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 4
- 239000010935 stainless steel Substances 0.000 abstract description 4
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 3
- 229910003910 SiCl4 Inorganic materials 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 2
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000004031 devitrification Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BAFMBEZERVBCML-UHFFFAOYSA-N Cl[Cl](Cl)(Cl)Cl Chemical compound Cl[Cl](Cl)(Cl)Cl BAFMBEZERVBCML-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19341985A JPS6254081A (ja) | 1985-09-02 | 1985-09-02 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19341985A JPS6254081A (ja) | 1985-09-02 | 1985-09-02 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6254081A true JPS6254081A (ja) | 1987-03-09 |
| JPS6327426B2 JPS6327426B2 (enrdf_load_stackoverflow) | 1988-06-02 |
Family
ID=16307650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19341985A Granted JPS6254081A (ja) | 1985-09-02 | 1985-09-02 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6254081A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270468A (ja) * | 1987-04-27 | 1988-11-08 | Hitachi Electronics Eng Co Ltd | Ｃｖｄ薄膜形成装置 |
| US5030476A (en) * | 1988-07-22 | 1991-07-09 | Canon Kabushiki Kaisha | Process and apparatus for the formation of a functional deposited film on a cylindrical substrate by means of microwave plasma chemical vapor deposition |
| WO2007091784A1 (en) * | 2006-02-10 | 2007-08-16 | Poongsan Microtec Co., Ltd. | Methods and apparatuses for high pressure gas annealing |
| US20110180001A1 (en) * | 2010-01-26 | 2011-07-28 | Japan Pionics Co., Ltd. | Vapor phase epitaxy apparatus of group iii nitride semiconductor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6067364U (ja) * | 1983-10-13 | 1985-05-13 | 富士通株式会社 | 反応管洗浄用アダプタ |
-
1985
- 1985-09-02 JP JP19341985A patent/JPS6254081A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6067364U (ja) * | 1983-10-13 | 1985-05-13 | 富士通株式会社 | 反応管洗浄用アダプタ |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270468A (ja) * | 1987-04-27 | 1988-11-08 | Hitachi Electronics Eng Co Ltd | Ｃｖｄ薄膜形成装置 |
| US5030476A (en) * | 1988-07-22 | 1991-07-09 | Canon Kabushiki Kaisha | Process and apparatus for the formation of a functional deposited film on a cylindrical substrate by means of microwave plasma chemical vapor deposition |
| US5439715A (en) * | 1988-07-22 | 1995-08-08 | Canon Kabushiki Kaisha | Process and apparatus for microwave plasma chemical vapor deposition |
| WO2007091784A1 (en) * | 2006-02-10 | 2007-08-16 | Poongsan Microtec Co., Ltd. | Methods and apparatuses for high pressure gas annealing |
| US20110180001A1 (en) * | 2010-01-26 | 2011-07-28 | Japan Pionics Co., Ltd. | Vapor phase epitaxy apparatus of group iii nitride semiconductor |
| US8679254B2 (en) * | 2010-01-26 | 2014-03-25 | Japan Pionics Co., Ltd. | Vapor phase epitaxy apparatus of group III nitride semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6327426B2 (enrdf_load_stackoverflow) | 1988-06-02 |
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