JPS6253933B2 - - Google Patents
Info
- Publication number
- JPS6253933B2 JPS6253933B2 JP12703378A JP12703378A JPS6253933B2 JP S6253933 B2 JPS6253933 B2 JP S6253933B2 JP 12703378 A JP12703378 A JP 12703378A JP 12703378 A JP12703378 A JP 12703378A JP S6253933 B2 JPS6253933 B2 JP S6253933B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- substrate
- gas
- gas supply
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12703378A JPS5553414A (en) | 1978-10-16 | 1978-10-16 | Semiconductor crystal growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12703378A JPS5553414A (en) | 1978-10-16 | 1978-10-16 | Semiconductor crystal growing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5553414A JPS5553414A (en) | 1980-04-18 |
| JPS6253933B2 true JPS6253933B2 (enrdf_load_stackoverflow) | 1987-11-12 |
Family
ID=14949991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12703378A Granted JPS5553414A (en) | 1978-10-16 | 1978-10-16 | Semiconductor crystal growing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5553414A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0795546B2 (ja) * | 1989-03-31 | 1995-10-11 | 工業技術院長 | シリコン表面の処理方法 |
-
1978
- 1978-10-16 JP JP12703378A patent/JPS5553414A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5553414A (en) | 1980-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0835336B1 (en) | A device and a method for epitaxially growing objects by cvd | |
| JPH01162326A (ja) | β−炭化シリコン層の製造方法 | |
| JPS6364993A (ja) | 元素半導体単結晶薄膜の成長方法 | |
| JPH076950A (ja) | 電子、電光および光学的な構成要素に対する構造部品を作製する方法 | |
| EP1333482A2 (en) | Method for manufacturing a semiconductor silicon carbide on insulator substrate (SOI) and apparatus therefore | |
| US3941647A (en) | Method of producing epitaxially semiconductor layers | |
| JPS639368B2 (enrdf_load_stackoverflow) | ||
| JPS6253933B2 (enrdf_load_stackoverflow) | ||
| JPH06224127A (ja) | シリコン膜の成長方法およびその装置 | |
| JPS6254424A (ja) | GaAs薄膜の気相成長法 | |
| JP3112796B2 (ja) | 化学気相成長方法 | |
| JPS58223317A (ja) | 化合物半導体結晶成長法及びその装置 | |
| JP2000351694A (ja) | 混晶膜の気相成長方法およびその装置 | |
| JPH0427116A (ja) | 半導体異種接合を形成する方法 | |
| JP2847198B2 (ja) | 化合物半導体の気相成長方法 | |
| JPS6121197B2 (enrdf_load_stackoverflow) | ||
| JP2004186376A (ja) | シリコンウェーハの製造装置及び製造方法 | |
| JPS6278191A (ja) | 単結晶薄膜の製造方法 | |
| KR100249163B1 (ko) | 에피막형성방법 | |
| JPS61170021A (ja) | シリコン基板表面の酸化膜除去法 | |
| JP2819556B2 (ja) | 半導体レーザの製造方法 | |
| JPS61131434A (ja) | 半導体装置の製造方法 | |
| JPH0529637B2 (enrdf_load_stackoverflow) | ||
| JPS6217370B2 (enrdf_load_stackoverflow) | ||
| JPS6278192A (ja) | n型単結晶薄膜の製造方法 |