JPS6253933B2 - - Google Patents
Info
- Publication number
- JPS6253933B2 JPS6253933B2 JP12703378A JP12703378A JPS6253933B2 JP S6253933 B2 JPS6253933 B2 JP S6253933B2 JP 12703378 A JP12703378 A JP 12703378A JP 12703378 A JP12703378 A JP 12703378A JP S6253933 B2 JPS6253933 B2 JP S6253933B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- substrate
- gas
- gas supply
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 38
- 239000013078 crystal Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 230000002000 scavenging effect Effects 0.000 description 3
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12703378A JPS5553414A (en) | 1978-10-16 | 1978-10-16 | Semiconductor crystal growing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12703378A JPS5553414A (en) | 1978-10-16 | 1978-10-16 | Semiconductor crystal growing device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5553414A JPS5553414A (en) | 1980-04-18 |
JPS6253933B2 true JPS6253933B2 (enrdf_load_stackoverflow) | 1987-11-12 |
Family
ID=14949991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12703378A Granted JPS5553414A (en) | 1978-10-16 | 1978-10-16 | Semiconductor crystal growing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553414A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0795546B2 (ja) * | 1989-03-31 | 1995-10-11 | 工業技術院長 | シリコン表面の処理方法 |
-
1978
- 1978-10-16 JP JP12703378A patent/JPS5553414A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5553414A (en) | 1980-04-18 |
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