JPS6217370B2 - - Google Patents
Info
- Publication number
- JPS6217370B2 JPS6217370B2 JP1395279A JP1395279A JPS6217370B2 JP S6217370 B2 JPS6217370 B2 JP S6217370B2 JP 1395279 A JP1395279 A JP 1395279A JP 1395279 A JP1395279 A JP 1395279A JP S6217370 B2 JPS6217370 B2 JP S6217370B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- growth
- scavenging
- onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 54
- 230000002000 scavenging effect Effects 0.000 claims description 9
- 239000011148 porous material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 13
- 239000012535 impurity Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- QHGSGZLLHBKSAH-UHFFFAOYSA-N hydridosilicon Chemical compound [SiH] QHGSGZLLHBKSAH-UHFFFAOYSA-N 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- VTLHPSMQDDEFRU-UHFFFAOYSA-N tellane Chemical compound [TeH2] VTLHPSMQDDEFRU-UHFFFAOYSA-N 0.000 description 1
- 229910000059 tellane Inorganic materials 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1395279A JPS55107227A (en) | 1979-02-08 | 1979-02-08 | Device for growing of semiconductor in vapor phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1395279A JPS55107227A (en) | 1979-02-08 | 1979-02-08 | Device for growing of semiconductor in vapor phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55107227A JPS55107227A (en) | 1980-08-16 |
| JPS6217370B2 true JPS6217370B2 (enrdf_load_stackoverflow) | 1987-04-17 |
Family
ID=11847537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1395279A Granted JPS55107227A (en) | 1979-02-08 | 1979-02-08 | Device for growing of semiconductor in vapor phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55107227A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS573797A (en) * | 1980-06-09 | 1982-01-09 | Fujitsu Ltd | Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus |
-
1979
- 1979-02-08 JP JP1395279A patent/JPS55107227A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55107227A (en) | 1980-08-16 |
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