JPS55107227A - Device for growing of semiconductor in vapor phase - Google Patents

Device for growing of semiconductor in vapor phase

Info

Publication number
JPS55107227A
JPS55107227A JP1395279A JP1395279A JPS55107227A JP S55107227 A JPS55107227 A JP S55107227A JP 1395279 A JP1395279 A JP 1395279A JP 1395279 A JP1395279 A JP 1395279A JP S55107227 A JPS55107227 A JP S55107227A
Authority
JP
Japan
Prior art keywords
gas
substrate
growing
inp
fine holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1395279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6217370B2 (enrdf_load_stackoverflow
Inventor
Jun Ishii
Kazuhisa Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1395279A priority Critical patent/JPS55107227A/ja
Publication of JPS55107227A publication Critical patent/JPS55107227A/ja
Publication of JPS6217370B2 publication Critical patent/JPS6217370B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1395279A 1979-02-08 1979-02-08 Device for growing of semiconductor in vapor phase Granted JPS55107227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1395279A JPS55107227A (en) 1979-02-08 1979-02-08 Device for growing of semiconductor in vapor phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1395279A JPS55107227A (en) 1979-02-08 1979-02-08 Device for growing of semiconductor in vapor phase

Publications (2)

Publication Number Publication Date
JPS55107227A true JPS55107227A (en) 1980-08-16
JPS6217370B2 JPS6217370B2 (enrdf_load_stackoverflow) 1987-04-17

Family

ID=11847537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1395279A Granted JPS55107227A (en) 1979-02-08 1979-02-08 Device for growing of semiconductor in vapor phase

Country Status (1)

Country Link
JP (1) JPS55107227A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573797A (en) * 1980-06-09 1982-01-09 Fujitsu Ltd Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS573797A (en) * 1980-06-09 1982-01-09 Fujitsu Ltd Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus

Also Published As

Publication number Publication date
JPS6217370B2 (enrdf_load_stackoverflow) 1987-04-17

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