JPS6250967B2 - - Google Patents
Info
- Publication number
- JPS6250967B2 JPS6250967B2 JP53148217A JP14821778A JPS6250967B2 JP S6250967 B2 JPS6250967 B2 JP S6250967B2 JP 53148217 A JP53148217 A JP 53148217A JP 14821778 A JP14821778 A JP 14821778A JP S6250967 B2 JPS6250967 B2 JP S6250967B2
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- grain boundaries
- capacitors
- grain
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000003990 capacitor Substances 0.000 claims description 35
- 239000000203 mixture Substances 0.000 claims description 14
- 238000010405 reoxidation reaction Methods 0.000 claims description 13
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 description 14
- 229910002113 barium titanate Inorganic materials 0.000 description 10
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 10
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 239000005749 Copper compound Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001621 bismuth Chemical class 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229940036348 bismuth carbonate Drugs 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- GMZOPRQQINFLPQ-UHFFFAOYSA-H dibismuth;tricarbonate Chemical compound [Bi+3].[Bi+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GMZOPRQQINFLPQ-UHFFFAOYSA-H 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14821778A JPS5574128A (en) | 1978-11-29 | 1978-11-29 | Porcelain composition for grain boundary reoxidation type semiconductor capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14821778A JPS5574128A (en) | 1978-11-29 | 1978-11-29 | Porcelain composition for grain boundary reoxidation type semiconductor capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5574128A JPS5574128A (en) | 1980-06-04 |
| JPS6250967B2 true JPS6250967B2 (enExample) | 1987-10-28 |
Family
ID=15447883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14821778A Granted JPS5574128A (en) | 1978-11-29 | 1978-11-29 | Porcelain composition for grain boundary reoxidation type semiconductor capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5574128A (enExample) |
-
1978
- 1978-11-29 JP JP14821778A patent/JPS5574128A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5574128A (en) | 1980-06-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5790367A (en) | Multilayer capacitor comprising a dielectric of modified barium strontium titanate | |
| JPH0226775B2 (enExample) | ||
| JPS6249977B2 (enExample) | ||
| JPS5820133B2 (ja) | 半導体磁器コンデンサ用磁器およびその製造方法 | |
| JPS6250967B2 (enExample) | ||
| JPS606535B2 (ja) | 磁器組成物 | |
| KR940011059B1 (ko) | 입계형 반도성 자기콘덴서 | |
| JPH08124781A (ja) | 半導体磁器の製造方法 | |
| JPH0734415B2 (ja) | 粒界絶縁型半導体磁器組成物 | |
| JPS6128209B2 (enExample) | ||
| JPS5828726B2 (ja) | 半導体コンデンサ用磁器 | |
| JP2584985B2 (ja) | 半導体磁器組成物 | |
| JPS6216481B2 (enExample) | ||
| JPS6249976B2 (enExample) | ||
| JPH032814B2 (enExample) | ||
| JPS6032344B2 (ja) | 粒界絶縁型半導体磁器コンデンサ材料 | |
| JPH05251260A (ja) | 粒界型半導体性磁器コンデンサー | |
| JP2734888B2 (ja) | 半導体磁器組成物の製造方法 | |
| JPS6250968B2 (enExample) | ||
| JPS6217368B2 (enExample) | ||
| JPS6053451B2 (ja) | 誘電体磁器の製造方法 | |
| JPS6126207B2 (enExample) | ||
| JPH03218964A (ja) | 半導体磁器及びその製造方法 | |
| JPH06151233A (ja) | 半導体磁器組成物の製造方法 | |
| JPS6019133B2 (ja) | 半導体磁器コンデンサの製造方法 |