JPS6249733B2 - - Google Patents

Info

Publication number
JPS6249733B2
JPS6249733B2 JP57127227A JP12722782A JPS6249733B2 JP S6249733 B2 JPS6249733 B2 JP S6249733B2 JP 57127227 A JP57127227 A JP 57127227A JP 12722782 A JP12722782 A JP 12722782A JP S6249733 B2 JPS6249733 B2 JP S6249733B2
Authority
JP
Japan
Prior art keywords
single crystal
nitride film
crystal silicon
silicon
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57127227A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5918657A (ja
Inventor
Akinobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Original Assignee
JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JIDO KEISOKU GIJUTSU KENKYUKUMIAI filed Critical JIDO KEISOKU GIJUTSU KENKYUKUMIAI
Priority to JP57127227A priority Critical patent/JPS5918657A/ja
Publication of JPS5918657A publication Critical patent/JPS5918657A/ja
Publication of JPS6249733B2 publication Critical patent/JPS6249733B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10W10/012—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP57127227A 1982-07-21 1982-07-21 集積回路用基板の製造方法 Granted JPS5918657A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57127227A JPS5918657A (ja) 1982-07-21 1982-07-21 集積回路用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57127227A JPS5918657A (ja) 1982-07-21 1982-07-21 集積回路用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5918657A JPS5918657A (ja) 1984-01-31
JPS6249733B2 true JPS6249733B2 (enExample) 1987-10-21

Family

ID=14954873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57127227A Granted JPS5918657A (ja) 1982-07-21 1982-07-21 集積回路用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5918657A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553856B1 (en) * 1992-01-31 2002-04-17 Canon Kabushiki Kaisha Method of preparing a semiconductor substrate

Also Published As

Publication number Publication date
JPS5918657A (ja) 1984-01-31

Similar Documents

Publication Publication Date Title
US4963505A (en) Semiconductor device and method of manufacturing same
US5138422A (en) Semiconductor device which includes multiple isolated semiconductor segments on one chip
US5442223A (en) Semiconductor device with stress relief
US4053349A (en) Method for forming a narrow gap
US3411200A (en) Fabrication of semiconductor integrated circuits
US6046477A (en) Dense SOI programmable logic array structure
JPS6249733B2 (enExample)
JPS6244414B2 (enExample)
JPS6244411B2 (enExample)
JPS6244415B2 (enExample)
JPS6244413B2 (enExample)
US3421205A (en) Fabrication of structures for semiconductor integrated circuits
JPS6244412B2 (enExample)
JPH01112746A (ja) 半導体装置
JPH03229443A (ja) 半導体装置
JPS5939044A (ja) 絶縁分離集積回路用基板の製造方法
JP3102197B2 (ja) ウエハの誘電体分離方法
JPS59178747A (ja) 半導体装置の製法
JPH07142564A (ja) 半導体装置の製造方法
JPH0212854A (ja) 誘電体分離型半導体集積回路基板の製造方法
JPS5939045A (ja) 絶縁分離集積回路用基板の製造方法
JPH0420266B2 (enExample)
JPS6196748A (ja) 誘電体分離基板及びその製造方法
JPS59218748A (ja) 相補形誘電体分離基板の製造方法
JPH0430449A (ja) 半導体集積装置の製造方法