JPS6248914B2 - - Google Patents

Info

Publication number
JPS6248914B2
JPS6248914B2 JP55171821A JP17182180A JPS6248914B2 JP S6248914 B2 JPS6248914 B2 JP S6248914B2 JP 55171821 A JP55171821 A JP 55171821A JP 17182180 A JP17182180 A JP 17182180A JP S6248914 B2 JPS6248914 B2 JP S6248914B2
Authority
JP
Japan
Prior art keywords
thin layer
selenium
layer
semiconductor device
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55171821A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5795679A (en
Inventor
Yoshihiko Mizushima
Akyasu Takeda
Toshiro Ogino
Hideaki Ito
Masayoshi Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55171821A priority Critical patent/JPS5795679A/ja
Publication of JPS5795679A publication Critical patent/JPS5795679A/ja
Publication of JPS6248914B2 publication Critical patent/JPS6248914B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP55171821A 1980-12-05 1980-12-05 Manufacturing method of selenium semiconductor device Granted JPS5795679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171821A JPS5795679A (en) 1980-12-05 1980-12-05 Manufacturing method of selenium semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171821A JPS5795679A (en) 1980-12-05 1980-12-05 Manufacturing method of selenium semiconductor device

Publications (2)

Publication Number Publication Date
JPS5795679A JPS5795679A (en) 1982-06-14
JPS6248914B2 true JPS6248914B2 (https=) 1987-10-16

Family

ID=15930356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171821A Granted JPS5795679A (en) 1980-12-05 1980-12-05 Manufacturing method of selenium semiconductor device

Country Status (1)

Country Link
JP (1) JPS5795679A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60220967A (ja) * 1984-04-18 1985-11-05 Fuji Xerox Co Ltd 半導体装置
JP6362257B2 (ja) * 2013-06-13 2018-07-25 日本放送協会 光電変換素子、光電変換素子の製造方法、積層型固体撮像素子および太陽電池
CN115084290B (zh) * 2022-07-06 2023-07-25 中国科学院化学研究所 一种多晶硒薄膜及其制备方法和一种太阳能电池

Also Published As

Publication number Publication date
JPS5795679A (en) 1982-06-14

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