JPS6161710B2 - - Google Patents

Info

Publication number
JPS6161710B2
JPS6161710B2 JP55171820A JP17182080A JPS6161710B2 JP S6161710 B2 JPS6161710 B2 JP S6161710B2 JP 55171820 A JP55171820 A JP 55171820A JP 17182080 A JP17182080 A JP 17182080A JP S6161710 B2 JPS6161710 B2 JP S6161710B2
Authority
JP
Japan
Prior art keywords
thin layer
selenium
photosensitive resin
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55171820A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5795678A (en
Inventor
Yoshihiko Mizushima
Akitsu Takeda
Toshiro Ogino
Hideo Ito
Masayoshi Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP55171820A priority Critical patent/JPS5795678A/ja
Publication of JPS5795678A publication Critical patent/JPS5795678A/ja
Publication of JPS6161710B2 publication Critical patent/JPS6161710B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
JP55171820A 1980-12-05 1980-12-05 Selenium semiconductor device and manufacturing method Granted JPS5795678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55171820A JPS5795678A (en) 1980-12-05 1980-12-05 Selenium semiconductor device and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171820A JPS5795678A (en) 1980-12-05 1980-12-05 Selenium semiconductor device and manufacturing method

Publications (2)

Publication Number Publication Date
JPS5795678A JPS5795678A (en) 1982-06-14
JPS6161710B2 true JPS6161710B2 (https=) 1986-12-26

Family

ID=15930336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171820A Granted JPS5795678A (en) 1980-12-05 1980-12-05 Selenium semiconductor device and manufacturing method

Country Status (1)

Country Link
JP (1) JPS5795678A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6362257B2 (ja) * 2013-06-13 2018-07-25 日本放送協会 光電変換素子、光電変換素子の製造方法、積層型固体撮像素子および太陽電池

Also Published As

Publication number Publication date
JPS5795678A (en) 1982-06-14

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