JPS624866B2 - - Google Patents
Info
- Publication number
- JPS624866B2 JPS624866B2 JP53066896A JP6689678A JPS624866B2 JP S624866 B2 JPS624866 B2 JP S624866B2 JP 53066896 A JP53066896 A JP 53066896A JP 6689678 A JP6689678 A JP 6689678A JP S624866 B2 JPS624866 B2 JP S624866B2
- Authority
- JP
- Japan
- Prior art keywords
- channel
- source
- drain regions
- transistor
- channel transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000000295 complement effect Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 19
- 239000012535 impurity Substances 0.000 claims description 14
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 238000005468 ion implantation Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6689678A JPS54158177A (en) | 1978-06-02 | 1978-06-02 | Method of fabricating complementary mos transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6689678A JPS54158177A (en) | 1978-06-02 | 1978-06-02 | Method of fabricating complementary mos transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54158177A JPS54158177A (en) | 1979-12-13 |
| JPS624866B2 true JPS624866B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-02-02 |
Family
ID=13329135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6689678A Granted JPS54158177A (en) | 1978-06-02 | 1978-06-02 | Method of fabricating complementary mos transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54158177A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821631B2 (ja) * | 1986-11-29 | 1996-03-04 | ソニー株式会社 | 半導体集積回路装置 |
| JP2668538B2 (ja) * | 1988-02-05 | 1997-10-27 | ヤマハ株式会社 | 集積回路装置の製法 |
-
1978
- 1978-06-02 JP JP6689678A patent/JPS54158177A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54158177A (en) | 1979-12-13 |