JPS624865B2 - - Google Patents

Info

Publication number
JPS624865B2
JPS624865B2 JP5731377A JP5731377A JPS624865B2 JP S624865 B2 JPS624865 B2 JP S624865B2 JP 5731377 A JP5731377 A JP 5731377A JP 5731377 A JP5731377 A JP 5731377A JP S624865 B2 JPS624865 B2 JP S624865B2
Authority
JP
Japan
Prior art keywords
epitaxial layer
layer
gate electrode
epitaxial
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5731377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53142189A (en
Inventor
Mitsuo Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP5731377A priority Critical patent/JPS53142189A/ja
Publication of JPS53142189A publication Critical patent/JPS53142189A/ja
Publication of JPS624865B2 publication Critical patent/JPS624865B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP5731377A 1977-05-17 1977-05-17 Insulating gate type field effect transistor Granted JPS53142189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5731377A JPS53142189A (en) 1977-05-17 1977-05-17 Insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5731377A JPS53142189A (en) 1977-05-17 1977-05-17 Insulating gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS53142189A JPS53142189A (en) 1978-12-11
JPS624865B2 true JPS624865B2 (enrdf_load_stackoverflow) 1987-02-02

Family

ID=13052066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5731377A Granted JPS53142189A (en) 1977-05-17 1977-05-17 Insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS53142189A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4379305A (en) * 1980-05-29 1983-04-05 General Instrument Corp. Mesh gate V-MOS power FET
JPS57128966A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device
FR2513016A1 (fr) * 1981-09-14 1983-03-18 Radiotechnique Compelec Transistor v mos haute tension, et son procede de fabrication
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
DE3752273T2 (de) * 1986-11-19 1999-09-09 Nishizawa Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung
JP2570742B2 (ja) * 1987-05-27 1997-01-16 ソニー株式会社 半導体装置
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US6351009B1 (en) 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same

Also Published As

Publication number Publication date
JPS53142189A (en) 1978-12-11

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