JPS53142189A - Insulating gate type field effect transistor - Google Patents

Insulating gate type field effect transistor

Info

Publication number
JPS53142189A
JPS53142189A JP5731377A JP5731377A JPS53142189A JP S53142189 A JPS53142189 A JP S53142189A JP 5731377 A JP5731377 A JP 5731377A JP 5731377 A JP5731377 A JP 5731377A JP S53142189 A JPS53142189 A JP S53142189A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
gate type
insulating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5731377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS624865B2 (enrdf_load_stackoverflow
Inventor
Mitsuo Kishimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP5731377A priority Critical patent/JPS53142189A/ja
Publication of JPS53142189A publication Critical patent/JPS53142189A/ja
Publication of JPS624865B2 publication Critical patent/JPS624865B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP5731377A 1977-05-17 1977-05-17 Insulating gate type field effect transistor Granted JPS53142189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5731377A JPS53142189A (en) 1977-05-17 1977-05-17 Insulating gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5731377A JPS53142189A (en) 1977-05-17 1977-05-17 Insulating gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS53142189A true JPS53142189A (en) 1978-12-11
JPS624865B2 JPS624865B2 (enrdf_load_stackoverflow) 1987-02-02

Family

ID=13052066

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5731377A Granted JPS53142189A (en) 1977-05-17 1977-05-17 Insulating gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS53142189A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756975A (en) * 1980-05-29 1982-04-05 Gen Instrument Corp V-mos field effect semiconductor device and method of producing same
JPS57128966A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device
JPS5858771A (ja) * 1981-09-14 1983-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 絶縁ゲ−ト電界効果トランジスタおよびその製造方法
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
JPS63296282A (ja) * 1987-05-27 1988-12-02 Sony Corp 半導体装置
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US5115287A (en) * 1986-11-19 1992-05-19 Research Development Corporation Of Japan Step-cut insulated gate static induction transistors and method of manufacturing the same
US6916712B2 (en) 1999-03-01 2005-07-12 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5756975A (en) * 1980-05-29 1982-04-05 Gen Instrument Corp V-mos field effect semiconductor device and method of producing same
JPS57128966A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device
JPS5858771A (ja) * 1981-09-14 1983-04-07 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 絶縁ゲ−ト電界効果トランジスタおよびその製造方法
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4757361A (en) * 1986-07-23 1988-07-12 International Business Machines Corporation Amorphous thin film transistor device
US5115287A (en) * 1986-11-19 1992-05-19 Research Development Corporation Of Japan Step-cut insulated gate static induction transistors and method of manufacturing the same
JPS63296282A (ja) * 1987-05-27 1988-12-02 Sony Corp 半導体装置
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US6916712B2 (en) 1999-03-01 2005-07-12 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
US7388254B2 (en) 1999-03-01 2008-06-17 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same

Also Published As

Publication number Publication date
JPS624865B2 (enrdf_load_stackoverflow) 1987-02-02

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