JPS6244432B2 - - Google Patents
Info
- Publication number
- JPS6244432B2 JPS6244432B2 JP53087358A JP8735878A JPS6244432B2 JP S6244432 B2 JPS6244432 B2 JP S6244432B2 JP 53087358 A JP53087358 A JP 53087358A JP 8735878 A JP8735878 A JP 8735878A JP S6244432 B2 JPS6244432 B2 JP S6244432B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- semiconductor layer
- junction
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 6
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 32
- 239000010408 film Substances 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 5
- 238000004891 communication Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8735878A JPS5513957A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8735878A JPS5513957A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513957A JPS5513957A (en) | 1980-01-31 |
| JPS6244432B2 true JPS6244432B2 (ko) | 1987-09-21 |
Family
ID=13912655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8735878A Granted JPS5513957A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513957A (ko) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5572084A (en) * | 1978-11-27 | 1980-05-30 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor photo-detector |
| JPS55162280A (en) * | 1979-06-01 | 1980-12-17 | Mitsubishi Electric Corp | Photodiode |
| JPS56158488A (en) * | 1980-05-12 | 1981-12-07 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5723277A (en) * | 1980-07-17 | 1982-02-06 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor light-receiving element and manufacture thereof |
| JPS611064A (ja) * | 1984-05-31 | 1986-01-07 | Fujitsu Ltd | 半導体受光装置 |
| EP0216572B1 (en) * | 1985-09-24 | 1995-04-05 | Kabushiki Kaisha Toshiba | Semiconductor photo-detector having a two-stepped impurity profile |
-
1978
- 1978-07-17 JP JP8735878A patent/JPS5513957A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5513957A (en) | 1980-01-31 |
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