JPS6243550B2 - - Google Patents

Info

Publication number
JPS6243550B2
JPS6243550B2 JP53017153A JP1715378A JPS6243550B2 JP S6243550 B2 JPS6243550 B2 JP S6243550B2 JP 53017153 A JP53017153 A JP 53017153A JP 1715378 A JP1715378 A JP 1715378A JP S6243550 B2 JPS6243550 B2 JP S6243550B2
Authority
JP
Japan
Prior art keywords
gate electrode
forming
oxide film
film
control gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53017153A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54109784A (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1715378A priority Critical patent/JPS54109784A/ja
Priority to DE2847305A priority patent/DE2847305C2/de
Publication of JPS54109784A publication Critical patent/JPS54109784A/ja
Publication of JPS6243550B2 publication Critical patent/JPS6243550B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP1715378A 1977-10-31 1978-02-16 Manufacture of semiconductor device Granted JPS54109784A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1715378A JPS54109784A (en) 1978-02-16 1978-02-16 Manufacture of semiconductor device
DE2847305A DE2847305C2 (de) 1977-10-31 1978-10-31 Verfahren zur Herstellung einer Halbleiterspeichervorrichtung mit schwebender Gateelektrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1715378A JPS54109784A (en) 1978-02-16 1978-02-16 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS54109784A JPS54109784A (en) 1979-08-28
JPS6243550B2 true JPS6243550B2 (enExample) 1987-09-14

Family

ID=11936028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1715378A Granted JPS54109784A (en) 1977-10-31 1978-02-16 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54109784A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100546201B1 (ko) * 1999-06-30 2006-01-24 주식회사 하이닉스반도체 스택 게이트 플래쉬 이이피롬 셀의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN140846B (enExample) * 1973-08-06 1976-12-25 Rca Corp
JPS5075775A (enExample) * 1973-11-06 1975-06-21
JPS5910074B2 (ja) * 1975-06-18 1984-03-06 株式会社日立製作所 半導体不揮発性記憶装置
JPS53124084A (en) * 1977-04-06 1978-10-30 Hitachi Ltd Semiconductor memory device containing floating type poly silicon layer and its manufacture

Also Published As

Publication number Publication date
JPS54109784A (en) 1979-08-28

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