JPS6243550B2 - - Google Patents
Info
- Publication number
- JPS6243550B2 JPS6243550B2 JP53017153A JP1715378A JPS6243550B2 JP S6243550 B2 JPS6243550 B2 JP S6243550B2 JP 53017153 A JP53017153 A JP 53017153A JP 1715378 A JP1715378 A JP 1715378A JP S6243550 B2 JPS6243550 B2 JP S6243550B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- forming
- oxide film
- film
- control gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 238000000605 extraction Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1715378A JPS54109784A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
| DE19782847305 DE2847305C2 (de) | 1977-10-31 | 1978-10-31 | Verfahren zur Herstellung einer Halbleiterspeichervorrichtung mit schwebender Gateelektrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1715378A JPS54109784A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54109784A JPS54109784A (en) | 1979-08-28 |
| JPS6243550B2 true JPS6243550B2 (de) | 1987-09-14 |
Family
ID=11936028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1715378A Granted JPS54109784A (en) | 1977-10-31 | 1978-02-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54109784A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100546201B1 (ko) * | 1999-06-30 | 2006-01-24 | 주식회사 하이닉스반도체 | 스택 게이트 플래쉬 이이피롬 셀의 제조 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051276A (de) * | 1973-08-06 | 1975-05-08 | ||
| JPS5075775A (de) * | 1973-11-06 | 1975-06-21 | ||
| JPS51150284A (en) * | 1975-08-15 | 1976-12-23 | Hitachi Ltd | Semiconductor unvolatile memory unit |
| JPS53124084A (en) * | 1977-04-06 | 1978-10-30 | Hitachi Ltd | Semiconductor memory device containing floating type poly silicon layer and its manufacture |
-
1978
- 1978-02-16 JP JP1715378A patent/JPS54109784A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5051276A (de) * | 1973-08-06 | 1975-05-08 | ||
| JPS5075775A (de) * | 1973-11-06 | 1975-06-21 | ||
| JPS51150284A (en) * | 1975-08-15 | 1976-12-23 | Hitachi Ltd | Semiconductor unvolatile memory unit |
| JPS53124084A (en) * | 1977-04-06 | 1978-10-30 | Hitachi Ltd | Semiconductor memory device containing floating type poly silicon layer and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54109784A (en) | 1979-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH06112501A (ja) | 不揮発性半導体メモリ装置及びその製造方法 | |
| JPH0640582B2 (ja) | 絶縁ゲ−ト電界効果トランジスタの製造方法 | |
| US5569945A (en) | Stepped floating gate EPROM device | |
| CN106024797A (zh) | 半导体器件及其制造方法 | |
| US6355525B1 (en) | Method of producing non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions | |
| US4656729A (en) | Dual electron injection structure and process with self-limiting oxidation barrier | |
| US4229755A (en) | Fabrication of very large scale integrated circuits containing N-channel silicon gate nonvolatile memory elements | |
| US4027382A (en) | Silicon gate CCD structure | |
| JPS6135710B2 (de) | ||
| US4167017A (en) | CCD structures with surface potential asymmetry beneath the phase electrodes | |
| JPS6255710B2 (de) | ||
| US4027381A (en) | Silicon gate ccd structure | |
| JPH06104451A (ja) | 不揮発性半導体記憶装置 | |
| JPS6243550B2 (de) | ||
| JPS6161470A (ja) | 不揮発性半導体記憶装置 | |
| JPS6041876B2 (ja) | 絶縁ゲ−ト型電界効果トランジスタの製造方法 | |
| JP2950557B2 (ja) | 半導体装置およびその製造方法 | |
| JP2672530B2 (ja) | 半導体記憶装置の製造方法 | |
| JP2604863B2 (ja) | 半導体不揮発性メモリー素子の製造方法 | |
| KR900004731B1 (ko) | 불휘발성 반도체 장치와 그 제조방법 | |
| JP2605310B2 (ja) | 不揮発性メモリセルの製造方法 | |
| JP2875109B2 (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
| JPH0697456A (ja) | 不揮発性半導体メモリ | |
| JP3141492B2 (ja) | 不揮発性記憶素子の製造方法 | |
| JP3150093B2 (ja) | 不揮発性メモリ及びその製造方法 |