JPS6242569A - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ

Info

Publication number
JPS6242569A
JPS6242569A JP18219885A JP18219885A JPS6242569A JP S6242569 A JPS6242569 A JP S6242569A JP 18219885 A JP18219885 A JP 18219885A JP 18219885 A JP18219885 A JP 18219885A JP S6242569 A JPS6242569 A JP S6242569A
Authority
JP
Japan
Prior art keywords
layer
type
layers
channel
sqw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18219885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0328065B2 (OSRAM
Inventor
Yasumi Hikosaka
康己 彦坂
Yasutaka Hirachi
康剛 平地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18219885A priority Critical patent/JPS6242569A/ja
Priority to DE86401845T priority patent/DE3689433T2/de
Priority to EP86401845A priority patent/EP0214047B1/en
Publication of JPS6242569A publication Critical patent/JPS6242569A/ja
Priority to US07/593,502 priority patent/US5023674A/en
Publication of JPH0328065B2 publication Critical patent/JPH0328065B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP18219885A 1985-08-20 1985-08-20 電界効果型トランジスタ Granted JPS6242569A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP18219885A JPS6242569A (ja) 1985-08-20 1985-08-20 電界効果型トランジスタ
DE86401845T DE3689433T2 (de) 1985-08-20 1986-08-20 Feldeffekttransistor.
EP86401845A EP0214047B1 (en) 1985-08-20 1986-08-20 Field effect transistor
US07/593,502 US5023674A (en) 1985-08-20 1990-10-04 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18219885A JPS6242569A (ja) 1985-08-20 1985-08-20 電界効果型トランジスタ

Publications (2)

Publication Number Publication Date
JPS6242569A true JPS6242569A (ja) 1987-02-24
JPH0328065B2 JPH0328065B2 (OSRAM) 1991-04-17

Family

ID=16114063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18219885A Granted JPS6242569A (ja) 1985-08-20 1985-08-20 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JPS6242569A (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01268070A (ja) * 1988-04-20 1989-10-25 Toshiba Corp ヘテロ接合型電界効果トランジスタ
JPH021138A (ja) * 1987-11-06 1990-01-05 Foerderung Der Wissenschaft Ev:G 半導体装置
JPH02284434A (ja) * 1989-04-26 1990-11-21 Nec Corp 電界効果トランジスタ
JPH04314328A (ja) * 1991-04-12 1992-11-05 Nec Corp Ｉｉｉ−ｖ族化合物半導体のド−ピング方法
JPH0794758A (ja) * 1991-09-12 1995-04-07 Pohang Iron & Steel Co Ltd デルタドープト量子井戸電界効果トランジスタの製造方法
JP2008507122A (ja) * 2004-07-16 2008-03-06 ザ・ユニバーシティ・オブ・マンチェスター 自己スイッチングメモリデバイス
JP2008535546A (ja) * 2005-03-17 2008-09-04 オンテック デラウェア インク． 内容物を加熱または冷却するための一体型モジュールを備えた容器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117680A (ja) * 1983-11-29 1985-06-25 Nippon Telegr & Teleph Corp <Ntt> 高速電界効果トランジスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117680A (ja) * 1983-11-29 1985-06-25 Nippon Telegr & Teleph Corp <Ntt> 高速電界効果トランジスタ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH021138A (ja) * 1987-11-06 1990-01-05 Foerderung Der Wissenschaft Ev:G 半導体装置
JPH01268070A (ja) * 1988-04-20 1989-10-25 Toshiba Corp ヘテロ接合型電界効果トランジスタ
JPH02284434A (ja) * 1989-04-26 1990-11-21 Nec Corp 電界効果トランジスタ
JPH04314328A (ja) * 1991-04-12 1992-11-05 Nec Corp Ｉｉｉ−ｖ族化合物半導体のド−ピング方法
JPH0794758A (ja) * 1991-09-12 1995-04-07 Pohang Iron & Steel Co Ltd デルタドープト量子井戸電界効果トランジスタの製造方法
JP2008507122A (ja) * 2004-07-16 2008-03-06 ザ・ユニバーシティ・オブ・マンチェスター 自己スイッチングメモリデバイス
JP2008535546A (ja) * 2005-03-17 2008-09-04 オンテック デラウェア インク． 内容物を加熱または冷却するための一体型モジュールを備えた容器

Also Published As

Publication number Publication date
JPH0328065B2 (OSRAM) 1991-04-17

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