JPS6242256U - - Google Patents
Info
- Publication number
- JPS6242256U JPS6242256U JP12583886U JP12583886U JPS6242256U JP S6242256 U JPS6242256 U JP S6242256U JP 12583886 U JP12583886 U JP 12583886U JP 12583886 U JP12583886 U JP 12583886U JP S6242256 U JPS6242256 U JP S6242256U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- thyristor
- layer structure
- semiconductor switch
- pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 4
- 238000009792 diffusion process Methods 0.000 claims 1
- 229920006395 saturated elastomer Polymers 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thyristor Switches And Gates (AREA)
Description
第１図、第２図は従来のサイリスタのシヨート
エミツタ回路接続図、第３図は第２図の回路に過
渡電圧が加わつた場合の各部の電圧および電流波
形を示す図、第４図は第２図に示す回路の動作時
の等価回路図、第５図は第２図の回路を従来法に
倣つて集積化した時の誘電体絶縁分離基板の平面
図、第６図ａ，ｂは第５図の―切断線、―
切断線に沿つた縦断面図、第７図ａ，ｂは本考
案の一実施例を示すもので、ａはサイリスタ、ｂ
はトランジスタの平面図、第８図ａ，ｂは本考案
の他の一実施例を示すものでａはサイリスタ、ｂ
はトランジスタの平面図、第９図は従来のサイリ
スタの他のシヨートエミツタ回路接続図、第１０
図は第９図に示す回路を本発明に従つて集積化し
た誘電体絶縁分離基板の平面図、第１１図は従来
のサイリスタの更に他のシヨートエミツタ回路接
続図、第１２図は第１１図に示す回路を本考案に
従つて集積化した誘電体絶縁分離基板の部分的平
面図である。
１……サイリスタ、２１，３０……トランジス
タ。
Figures 1 and 2 are short emitter circuit connection diagrams of conventional thyristors, Figure 3 is a diagram showing voltage and current waveforms at various parts when a transient voltage is applied to the circuit in Figure 2, and Figure 4 is a diagram showing the short emitter circuit of a conventional thyristor. Fig. 5 is a plan view of a dielectric insulation separation board when the circuit shown in Fig. 2 is integrated according to the conventional method; - Cutting line in the diagram, -
The vertical sectional views taken along the cutting line, FIGS.
8 is a plan view of a transistor, and FIGS. 8a and 8b show another embodiment of the present invention, where a is a thyristor and b is a thyristor.
is a plan view of the transistor, Figure 9 is another short emitter circuit connection diagram of a conventional thyristor, and Figure 10 is a plan view of the transistor.
The figure is a plan view of a dielectric insulation isolation substrate in which the circuit shown in FIG. 9 is integrated according to the present invention, FIG. 11 is a connection diagram of yet another short emitter circuit of a conventional thyristor, and FIG. FIG. 3 is a partial plan view of a dielectric isolation isolation substrate on which the circuit shown in FIG. 1 is integrated according to the present invention. 1...Thyristor, 21, 30...Transistor.
Claims (1)
イリスタと、飽和時に上記サイリスタの少なくと
も１個のＰＮ接合を短絡する第１のトランジスタ
と、上記サイリスタのアノード側又はカソード側
と上記第１のトランジスタのベース間に設けられ
た上記サイリスタのアノード又はカソードに印加
される電圧に応じて上記第１のトランジスタを飽
和させる第２のトランジスタとから少なくとも構
成される半導体スイツチにおいて、上記サイリス
タ内の隣接する３層部分と上記第２のトランジス
タとはその素子構造が相似形であることを特徴と
する半導体スイツチ。 ２ 上記実用新案登録請求の範囲第１項において
、第１のトランジスタはＮＰＮ３層構造であり、
第２のトランジスタはＰＮＰ３層構造であること
を特徴とする半導体スイツチ。 ３ 上記実用新案登録請求の範囲第１項において
、第１のトランジスタはＰＮＰ３層構造であり、
第２のトランジスタはＰＮＰ３層構造であること
を特徴とする半導体スイツチ。 ４ 上記実用新案登録請求の範囲第１項において
、サイリスタと第２のトランジスタはその平面拡
散パターンに関して相似形であることを特徴とす
る半導体スイツチ。[Claims for Utility Model Registration] 1. A thyristor having a PNPN four-layer structure and three PN junctions, a first transistor that shorts at least one PN junction of the thyristor when saturated, and an anode or cathode of the thyristor. and a second transistor that saturates the first transistor in response to a voltage applied to the anode or cathode of the thyristor provided between the side and the base of the first transistor, A semiconductor switch characterized in that the adjacent three layer portions in the thyristor and the second transistor have similar element structures. 2. In claim 1 of the above utility model registration claim, the first transistor has an NPN three-layer structure,
A semiconductor switch characterized in that the second transistor has a PNP three-layer structure. 3 In claim 1 of the above utility model registration claim, the first transistor has a PNP three-layer structure,
A semiconductor switch characterized in that the second transistor has a PNP three-layer structure. 4. The semiconductor switch according to claim 1, wherein the thyristor and the second transistor have similar shapes with respect to their planar diffusion patterns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986125838U JPS6348136Y2 (en) | 1986-08-20 | 1986-08-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986125838U JPS6348136Y2 (en) | 1986-08-20 | 1986-08-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6242256U true JPS6242256U (en) | 1987-03-13 |
| JPS6348136Y2 JPS6348136Y2 (en) | 1988-12-12 |
Family
ID=31019085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986125838U Expired JPS6348136Y2 (en) | 1986-08-20 | 1986-08-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6348136Y2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146190A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode circuit |
| JPS5243350A (en) * | 1975-10-01 | 1977-04-05 | Hitachi Ltd | Semi-conductor switch |
| JPS5418664A (en) * | 1977-07-13 | 1979-02-10 | Hitachi Ltd | Semiconductor switch |
-
1986
- 1986-08-20 JP JP1986125838U patent/JPS6348136Y2/ja not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146190A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode circuit |
| JPS5243350A (en) * | 1975-10-01 | 1977-04-05 | Hitachi Ltd | Semi-conductor switch |
| JPS5418664A (en) * | 1977-07-13 | 1979-02-10 | Hitachi Ltd | Semiconductor switch |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6348136Y2 (en) | 1988-12-12 |
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