JPH0197568U - - Google Patents
Info
- Publication number
- JPH0197568U JPH0197568U JP19429787U JP19429787U JPH0197568U JP H0197568 U JPH0197568 U JP H0197568U JP 19429787 U JP19429787 U JP 19429787U JP 19429787 U JP19429787 U JP 19429787U JP H0197568 U JPH0197568 U JP H0197568U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- junction
- layer
- reverse
- annular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims 2
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図、第２図はそれぞれ本考案の実施例によ
るツエナーダイオードの縦断面図、第３図は従来
のダイオードの縦断面図である。
１……Ｎ形の半導体基板、２……第１のガード
リング接合、３……第２のガードリング接合、４
……メイン接合、５……絶縁膜、６……電極。
1 and 2 are longitudinal sectional views of a Zener diode according to an embodiment of the present invention, and FIG. 3 is a longitudinal sectional view of a conventional diode, respectively. DESCRIPTION OF SYMBOLS 1... N-type semiconductor substrate, 2... First guard ring junction, 3... Second guard ring junction, 4
...Main junction, 5...Insulating film, 6...Electrode.
Claims (1)
面に形成された環状の第１の逆導電層と前記半導
体基板とから形成された第１のＰＮ接合と、この
第１の逆導電層の内側に形成した環状の第２の逆
導電層と前記半導体基板とから形成され前記第１
のＰＮ接合より降伏電圧の低い第２のＰＮ接合と
、前記第２の逆導電層の内側に形成された第３の
逆導電型層と前記半導体基板とから形成され前記
第２のＰＮ接合より降伏電圧の低い第３のＰＮ接
合層とを有するツエナーダイオード。 a first PN junction formed from a semiconductor substrate of one conductivity type, an annular first reverse conductivity layer formed on one main surface of the semiconductor substrate, and the semiconductor substrate; The semiconductor substrate is formed of an annular second reverse conductive layer formed inside the first conductive layer and the semiconductor substrate.
a second PN junction having a lower breakdown voltage than the PN junction, a third reverse conductivity type layer formed inside the second reverse conductivity layer, and the semiconductor substrate; A Zener diode having a third PN junction layer with a low breakdown voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19429787U JPH0197568U (en) | 1987-12-21 | 1987-12-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19429787U JPH0197568U (en) | 1987-12-21 | 1987-12-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0197568U true JPH0197568U (en) | 1989-06-29 |
Family
ID=31485031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19429787U Pending JPH0197568U (en) | 1987-12-21 | 1987-12-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0197568U (en) |
-
1987
- 1987-12-21 JP JP19429787U patent/JPH0197568U/ja active Pending
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