JPS58173257U - semiconductor diode - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view showing an example of a conventional semiconductor diode.
FIG. 2 is a sectional view showing an embodiment of the present invention. 1.2... Semiconductor layer (first semiconductor layer), 3.
... pn junction, 4 ... semiconductor region, 5.
... Electrode, 6 ... Insulating layer, 7.・・・・・・
. . . Blocking metal layer (second metal layer), 8 . . . Intermediate metal layer (first metal layer), 11 .

Claims (1)

[Scope of utility model registration request] a first semiconductor layer having a first conductive property; a second semiconductor layer having a second conductive property, which is partially formed on the first semiconductor layer and forms a diode together with the first semiconductor layer; a ring-shaped insulating layer formed on the same side of the surface of the first semiconductor layer as the second semiconductor layer and in a portion other than the second semiconductor layer; an annular first metal layer formed on the contact portion so as to be in contact with both;
an annular second metal layer formed on the first metal layer; In a semiconductor diode that can extract an output current according to the amount of irradiation, the inner diameter of the first metal layer is made smaller than the inner diameter of the second metal layer, and the outer diameter of the insulating layer is formed at the periphery of the second semiconductor layer. A semiconductor diode comprising a guard ring having an inner diameter larger than the inner diameter and smaller than at least the inner diameter of the second metal layer.