JPH0351854U - - Google Patents
Info
- Publication number
- JPH0351854U JPH0351854U JP11283889U JP11283889U JPH0351854U JP H0351854 U JPH0351854 U JP H0351854U JP 11283889 U JP11283889 U JP 11283889U JP 11283889 U JP11283889 U JP 11283889U JP H0351854 U JPH0351854 U JP H0351854U
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- semiconductor region
- formed adjacent
- nickel
- electrically connected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は本考案の実施例を示すＰｎ接合ダイオ
ードの断面図、第２図は種々の金属の原子半径と
電気陰性度との関係を示すグラフである。
１……半導体領域、７……多層電極、１１……
第１の金属層、１２……第２の金属層、１３……
第３の金属層、１４……第４の金属層。
FIG. 1 is a cross-sectional view of a Pn junction diode showing an embodiment of the present invention, and FIG. 2 is a graph showing the relationship between atomic radius and electronegativity of various metals. 1... Semiconductor region, 7... Multilayer electrode, 11...
First metal layer, 12... Second metal layer, 13...
Third metal layer, 14...Fourth metal layer.
Claims (1)
成された多層電極７とを有し、前記多層電極７は
、前記半導体領域１に良好に密着する金属から成
りかつ前記半導体領域１に隣接して形成された第
１の金属層１１と、ニツケルから成りかつ前記第
１の金属層１１に電気的に接続されて形成された
第２の金属層１２と、パラジウムから成りかつ前
記第２の金属層１２に隣接して形成された第３の
金属層１３と、銀から成りかつ前記第３の金属層
１３に隣接して形成された第４の金属層１４とを
有することを特徴とする多層電極を有する半導体
装置。 It has a semiconductor region 1 and a multilayer electrode 7 formed adjacent to the semiconductor region 1, and the multilayer electrode 7 is made of metal that adheres well to the semiconductor region 1 and is adjacent to the semiconductor region 1. a first metal layer 11 made of nickel and electrically connected to the first metal layer 11; and a second metal layer 12 made of nickel and electrically connected to the first metal layer 11; Multilayer, characterized in that it has a third metal layer 13 formed adjacent to layer 12 and a fourth metal layer 14 made of silver and formed adjacent to said third metal layer 13 A semiconductor device with electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11283889U JPH0351854U (en) | 1989-09-28 | 1989-09-28 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11283889U JPH0351854U (en) | 1989-09-28 | 1989-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0351854U true JPH0351854U (en) | 1991-05-20 |
Family
ID=31661274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11283889U Pending JPH0351854U (en) | 1989-09-28 | 1989-09-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0351854U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6038823A (en) * | 1983-08-11 | 1985-02-28 | Nec Corp | Semiconductor device |
| JPS61116847A (en) * | 1984-08-31 | 1986-06-04 | テキサス インスツルメンツ インコ−ポレイテツド | Back contact construction for semiconductor device and manufacture thereof |
-
1989
- 1989-09-28 JP JP11283889U patent/JPH0351854U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6038823A (en) * | 1983-08-11 | 1985-02-28 | Nec Corp | Semiconductor device |
| JPS61116847A (en) * | 1984-08-31 | 1986-06-04 | テキサス インスツルメンツ インコ−ポレイテツド | Back contact construction for semiconductor device and manufacture thereof |
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