JPS6240452Y2 - - Google Patents
Info
- Publication number
- JPS6240452Y2 JPS6240452Y2 JP7036082U JP7036082U JPS6240452Y2 JP S6240452 Y2 JPS6240452 Y2 JP S6240452Y2 JP 7036082 U JP7036082 U JP 7036082U JP 7036082 U JP7036082 U JP 7036082U JP S6240452 Y2 JPS6240452 Y2 JP S6240452Y2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- semiconductor
- layer
- semiconductor layer
- inner diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 63
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 238000010894 electron beam technology Methods 0.000 claims description 19
- 230000005855 radiation Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 7
- 239000007769 metal material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910003086 Ti–Pt Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Description
【考案の詳細な説明】
本考案は、電子ビーム、放射線、レーザ光線等
の照射を受け、その照射量に応じた増倍電流を外
部に出力する電子ビーム等照射形の半導体ダイオ
ードに関するものである。[Detailed description of the invention] The present invention relates to an electron beam, etc. irradiation type semiconductor diode that receives irradiation with an electron beam, radiation, laser beam, etc. and outputs a multiplication current to the outside according to the amount of irradiation. .
従来この種の半導体ダイオードとしては第１図
に示すような構造のpn接合形電子ビーム等照射
形半導体ダイオードが提案されている。即ち、例
えばｎ+形の半導体層１の上にｎ-形の半導体層２
が形成され、この半導体層２の上記半導体層１と
は反対の側にpn接合３を形成すべくｐ+形の半導
体領域４が形成され、更にこの半導体領域４に対
しその半導体層２とは反対の側においてオーミツ
ク接触するように、電子ビーム、放射線、レーザ
光線等の高エネルギー照射線（以下、電子ビーム
等）に対して透明な電極５が形成されている。な
お、同図において、６は絶縁層、７はこれらの絶
縁層６やpn接合３を電子ビーム等の照射から保
護する例えば金など、電子ビーム等を透過しにく
い金属で円環状に構成された阻止金属層、８は第
２の金属層としての上記電極金属層７の金属が半
導体領域へ侵入するのを防止するために同じく円
環状に形成された第１の金属層としての中間金属
層であり、例えばTi−Ptなどの金属により構成
される。 Conventionally, as this type of semiconductor diode, a pn junction type electron beam irradiation type semiconductor diode having a structure as shown in FIG. 1 has been proposed. That is, for example, an n - type semiconductor layer 2 is placed on an n + type semiconductor layer 1.
is formed, a p + type semiconductor region 4 is formed to form a pn junction 3 on the opposite side of the semiconductor layer 2 from the semiconductor layer 1, and a An electrode 5 that is transparent to high-energy irradiation (hereinafter referred to as electron beam, etc.) such as an electron beam, radiation, or laser beam is formed so as to be in ohmic contact on the opposite side. In the figure, 6 is an insulating layer, and 7 is an annular structure made of a metal, such as gold, that is difficult for electron beams to pass through and protects the insulating layer 6 and the pn junction 3 from irradiation with electron beams. A blocking metal layer 8 is an intermediate metal layer serving as a first metal layer and also formed in an annular shape to prevent the metal of the electrode metal layer 7 serving as a second metal layer from penetrating into the semiconductor region. For example, it is made of metal such as Ti-Pt.
上記構成において、半導体層１と阻止金属層７
との間に半導体層１の側を正電極として電源９
を、負荷抵抗１０を介して接続し、pn接合３に
逆バイアスを与える。これにより半導体層２の内
部にpn接合３から空乏層を拡がらせて半導体層
２を空乏化した状態で、電極５の外部から電極５
および半導体領域４を通じて半導体層２の内部に
電子ビーム等１１を照射すると、その照射量に応
じた電子・正孔対が半導体層２の内部に発生し、
その電子および正孔がそれぞれ半導体領域４およ
び半導体層１に到達するという機構により、上記
電子ビーム等の照射量に応じた電流が出力電流と
して外部の負荷抵抗１０に出力される。 In the above structure, the semiconductor layer 1 and the blocking metal layer 7
A power supply 9 is connected with the semiconductor layer 1 side as the positive electrode between the
are connected through a load resistor 10 to apply a reverse bias to the pn junction 3. As a result, a depletion layer is spread from the pn junction 3 inside the semiconductor layer 2, and the semiconductor layer 2 is depleted.
When the inside of the semiconductor layer 2 is irradiated with an electron beam or the like 11 through the semiconductor region 4, electron-hole pairs corresponding to the amount of irradiation are generated inside the semiconductor layer 2,
Due to the mechanism in which the electrons and holes reach the semiconductor region 4 and the semiconductor layer 1, respectively, a current corresponding to the irradiation amount of the electron beam or the like is output as an output current to the external load resistor 10.
ここで、半導体領域４および電極５は、電子ビ
ーム等を効率良く透過させる必要があるために非
常に薄く形成される。例えば、10KV程度の電子
ビームを照射する場合で半導体領域４の厚さは
0.2〜0.3μｍに、また電極５の厚さはM0を使用し
た場合で200〜600Åにする必要があるとされてい
る。 Here, the semiconductor region 4 and the electrode 5 are formed very thin because it is necessary to efficiently transmit electron beams and the like. For example, when irradiating an electron beam of about 10KV, the thickness of the semiconductor region 4 is
It is said that the thickness of the electrode 5 needs to be 200 to 600 Å when M 0 is used.
このため、半導体材料と反応し易い金属を阻止
金属層７として使用したような場合、製造中、動
作中の温度が高いと、阻止金属層７の一部が中間
金属層８の側面あるいはピンホールから電極５の
ピンホール等を通過して半導体領域４に到達する
可能性が強く、更に半導体領域４を通つて半導体
層２まで達してダイオードを短絡させるおそれが
大きかつた。 Therefore, when a metal that easily reacts with the semiconductor material is used as the blocking metal layer 7, if the temperature during manufacturing or operation is high, part of the blocking metal layer 7 may form on the side surface of the intermediate metal layer 8 or form a pinhole. There was a strong possibility that the particles would reach the semiconductor region 4 through the pinholes of the electrode 5, and furthermore, there was a strong possibility that the particles would reach the semiconductor layer 2 through the semiconductor region 4 and short-circuit the diode.
本考案は、このような状況に鑑みてなされたも
のであり、その目的は、信頼性の高い電子ビーム
等照射形の半導体ダイオードを提供することにあ
る。 The present invention has been developed in view of the above circumstances, and its purpose is to provide a highly reliable semiconductor diode that can be irradiated with an electron beam or the like.
このような目的を達成するために、本考案は、
第１の半導体層と共にダイオードを構成する第２
の半導体層とそのまわりの絶縁層との接触部に第
１の金属層を介して設けた電子ビーム等阻止用の
第２の金属層の内径に対し上記第１の金属層の内
径を小さくすると共に、高エネルギー照射線の照
射を受ける側の第２の半導体層に内径が少なくと
も上記第２の金属層よりも小さくなるようなガー
ドリングを設けたものである。以下、実施例を用
いて本考案を詳細に説明する。 In order to achieve this purpose, the present invention
A second semiconductor layer that forms a diode together with the first semiconductor layer.
The inner diameter of the first metal layer is made smaller than the inner diameter of the second metal layer for blocking electron beams, etc., which is provided via the first metal layer at the contact portion between the semiconductor layer and the surrounding insulating layer. In addition, a guard ring is provided on the second semiconductor layer on the side receiving the high-energy radiation, the inner diameter of which is at least smaller than that of the second metal layer. Hereinafter, the present invention will be explained in detail using examples.
第２図は本考案の一実施例を示す断面図であ
り、第１図と、同一もしくは対応部分は同一記号
を付して示す。第２図も電子ビーム等の照射され
る領域が円形状の場合の例であるが、第１図にお
いて阻止金属層７の内径と中間金属層８の内径と
がほぼ等しいのに対し、第２図においては、中間
金属層８の内径を阻止金属層７の内径よりも小さ
くしてあるために、中間金属層８の内側面が阻止
金属層７の内側面とほぼ揃つていた従来のものに
比較して、阻止金属層７を構成する金属材料が中
間金属層８の内側面を伝わつて電極５、更に半導
体領域４に達する可能性が大幅に小さくなる。 FIG. 2 is a cross-sectional view showing one embodiment of the present invention, and parts that are the same as or correspond to those in FIG. 1 are designated with the same symbols. FIG. 2 is also an example where the area irradiated with an electron beam or the like is circular, but whereas in FIG. 1 the inner diameter of the blocking metal layer 7 and the inner diameter of the intermediate metal layer 8 are almost equal, In the figure, the inner diameter of the intermediate metal layer 8 is smaller than the inner diameter of the blocking metal layer 7, so that the inner surface of the intermediate metal layer 8 is almost aligned with the inner surface of the blocking metal layer 7. Compared to this, the possibility that the metal material constituting the blocking metal layer 7 will travel along the inner surface of the intermediate metal layer 8 and reach the electrode 5 and further the semiconductor region 4 is significantly reduced.
また、半導体領域４の周縁部には、ガードリン
グ１２を設けてある。このようなガードリング１
２は、半導体領域４の周辺部における電界集中を
防止し、逆方向耐電圧を向上させるためにpn接
合形ダイオードでは一般的に使用されている技術
であり、同図に示すように、通常の接合部よりも
深く半導体領域４を形成し、この部分の曲率半径
を大きくするもので、ダイオードの動作を安定に
保つため、一般には絶縁層６の下に位置するよう
に設けられる。これに対し、本考案では、第２図
に示したように、このガードリング１２は、その
外径は絶縁層６の内径より大きく、従つて外縁部
は絶縁層６の下に位置するように設けられている
が、その内径は少なくとも阻止金属層７の内径よ
りも小さくなるように形成してある。このため、
仮に阻止金属層７の金属材料が中間金属層８およ
び電極５を通過して半導体領域４に到達したとし
ても、ガードリング１２の部分の深さが他の部分
の半導体領域４に比較して十分深いため、阻止金
属層７の金属材料がこれを通過して半導体層２に
到達するまでには長い時間が必要となる。従つ
て、故障の発生を遅延させることができる。ま
た、特に中間金属層８として半導体材料と反応し
易い金属材料を使用せざるを得ないような場合で
も、ガードリング１２の内径を更に中間金属層８
の内径よりも小さくすることにより同様の効果を
得ることが可能である。 Further, a guard ring 12 is provided at the periphery of the semiconductor region 4 . Guard ring 1 like this
2 is a technique commonly used in pn junction diodes to prevent electric field concentration in the periphery of the semiconductor region 4 and improve reverse withstand voltage. The semiconductor region 4 is formed deeper than the junction portion, and the radius of curvature of this portion is increased.In order to maintain stable operation of the diode, it is generally provided under the insulating layer 6. On the other hand, in the present invention, as shown in FIG. However, the inner diameter thereof is formed to be smaller than at least the inner diameter of the blocking metal layer 7. For this reason,
Even if the metal material of the blocking metal layer 7 passes through the intermediate metal layer 8 and the electrode 5 and reaches the semiconductor region 4, the depth of the guard ring 12 portion is sufficient compared to the other portions of the semiconductor region 4. Because of the depth, it takes a long time for the metal material of the blocking metal layer 7 to pass through this and reach the semiconductor layer 2 . Therefore, the occurrence of failure can be delayed. In addition, even when it is necessary to use a metal material that easily reacts with semiconductor materials as the intermediate metal layer 8, the inner diameter of the guard ring 12 can be further reduced to the intermediate metal layer 8.
A similar effect can be obtained by making the inner diameter smaller than the inner diameter of the inner diameter.
なお、上述した実施例では、電子ビーム等を照
射する領域を円形状とした場合、即ち、阻止金属
層７や中間金属層８を円環状に形成した場合につ
いてのみ説明したが、本考案はこれに限定される
ものではなく、円形以外にも例えば方形状の電子
ビーム等照射領域を有する場合などに適用しても
同様の効果が得られることは言うまでもない。 Note that in the above-mentioned embodiments, only the case where the region to which the electron beam etc. is irradiated is circular, that is, the blocking metal layer 7 and the intermediate metal layer 8 are formed in an annular shape, has been described, but the present invention is not limited to this. It goes without saying that the present invention is not limited to this, and the same effect can be obtained even when the electron beam irradiation area is not limited to a circular shape, but is applied to a rectangular irradiation area, such as a rectangular one.
以上説明したように、本考案によれば、電子ビ
ーム等阻止用の第２の金属層材料と半導体材料と
反応し易い金属材料を用いた場合でも、上記第２
の金属層の内径に対しその下の第１の金属層の内
径を小さく設定したことにより、第２の金属層材
料が第２の半導体層としての半導体領域まで到達
しにくくすることができる。また、何らかの原因
で上記金属層材料が半導体領域まで到達してしま
つた場合でも、上記半導体領域周縁部のガードリ
ングの内径を少なくとも第２の金属層の内径より
小さくしたことにより上記金属層材料が第１の半
導体層まで到達して短絡等の不都合が発生するま
での時間を遅らせることができ、性能の低下や短
絡による故障等が生じにくく、信頼性の高い半導
体ダイオードを実現することが可能になるという
優れた効果を有する。 As explained above, according to the present invention, even when a second metal layer material for blocking electron beams, etc. and a metal material that easily reacts with a semiconductor material are used, the second
By setting the inner diameter of the first metal layer thereunder smaller than the inner diameter of the metal layer, it is possible to make it difficult for the second metal layer material to reach the semiconductor region as the second semiconductor layer. Furthermore, even if the metal layer material reaches the semiconductor region for some reason, the inner diameter of the guard ring at the periphery of the semiconductor region is made smaller than the inner diameter of at least the second metal layer, so that the metal layer material can reach the semiconductor region. The time required for the first semiconductor layer to reach the first semiconductor layer and short circuits can be delayed, making it possible to create highly reliable semiconductor diodes that are less prone to performance deterioration and failures due to short circuits. It has the excellent effect of
第１図は従来の半導体ダイオードの一例を示す
断面図、第２図は本考案の一実施例を示す断面図
である。
１，２……半導体層（第１の半導体層）、３…
…pn接合、４……半導体領域、５……電極、６
……絶縁層、７……阻止金属層（第２の金属
層）、８……中間金属層（第１の金属層）、１１…
…電子ビーム等の高エネルギー照射線。
FIG. 1 is a sectional view showing an example of a conventional semiconductor diode, and FIG. 2 is a sectional view showing an embodiment of the present invention. 1, 2... semiconductor layer (first semiconductor layer), 3...
... pn junction, 4 ... semiconductor region, 5 ... electrode, 6
... Insulating layer, 7 ... Blocking metal layer (second metal layer), 8 ... Intermediate metal layer (first metal layer), 11 ...
...High-energy radiation such as electron beams.
Claims (1)
の第１の半導体層に部分的に形成され第１の半導
体層と共にダイオードを構成する第２の導電特性
を有する第２の半導体層と、第１の半導体層の第
２の半導体層と同じ側の表面上でかつ第２の半導
体層以外の部分に形成された環状の絶縁層と、第
２の半導体層と絶縁層との接触部上に両者と接触
するように形成された環状の第１の金属層と、こ
の第１の金属層上に形成された環状の第２の金属
層とを備え、第２の半導体層を通して第１の半導
体層内に照射される電子ビーム等の高エネルギー
照射線の照射量に応じた出力電流が取出せる半導
体ダイオードにおいて、前記第１の金属層の内径
を第２の金属層の内径よりも小さくすると共に、
第２の半導体層周縁部に外径が絶縁層の内径より
大きくかつ内径が少なくとも第２の金属層の内径
よりも小さくなるようなガードリングを設けたこ
とを特徴とする半導体ダイオード。 a first semiconductor layer having a first conductive property; a second semiconductor layer having a second conductive property, which is partially formed on the first semiconductor layer and forms a diode together with the first semiconductor layer; A ring-shaped insulating layer formed on the surface of the first semiconductor layer on the same side as the second semiconductor layer and in a portion other than the second semiconductor layer, and a contact portion between the second semiconductor layer and the insulating layer. an annular first metal layer formed to be in contact with both of the semiconductor layers; and an annular second metal layer formed on the first metal layer; In a semiconductor diode capable of producing an output current corresponding to the amount of high-energy radiation such as an electron beam irradiated into the semiconductor layer, the inner diameter of the first metal layer is made smaller than the inner diameter of the second metal layer. With,
A semiconductor diode characterized in that a guard ring is provided at the peripheral edge of the second semiconductor layer, the outer diameter of which is larger than the inner diameter of the insulating layer and the inner diameter of which is smaller than at least the inner diameter of the second metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7036082U JPS58173257U (en) | 1982-05-14 | 1982-05-14 | semiconductor diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7036082U JPS58173257U (en) | 1982-05-14 | 1982-05-14 | semiconductor diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58173257U JPS58173257U (en) | 1983-11-19 |
| JPS6240452Y2 true JPS6240452Y2 (en) | 1987-10-16 |
Family
ID=30080035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7036082U Granted JPS58173257U (en) | 1982-05-14 | 1982-05-14 | semiconductor diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58173257U (en) |
-
1982
- 1982-05-14 JP JP7036082U patent/JPS58173257U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58173257U (en) | 1983-11-19 |
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