JPS6241429B2 - - Google Patents
Info
- Publication number
- JPS6241429B2 JPS6241429B2 JP6141980A JP6141980A JPS6241429B2 JP S6241429 B2 JPS6241429 B2 JP S6241429B2 JP 6141980 A JP6141980 A JP 6141980A JP 6141980 A JP6141980 A JP 6141980A JP S6241429 B2 JPS6241429 B2 JP S6241429B2
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- film
- point metal
- high melting
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000002844 melting Methods 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 18
- 238000005468 ion implantation Methods 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 description 54
- 229910052750 molybdenum Inorganic materials 0.000 description 31
- 239000011733 molybdenum Substances 0.000 description 31
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 30
- 150000002500 ions Chemical class 0.000 description 21
- 239000010410 layer Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052785 arsenic Inorganic materials 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- -1 arsenic ions Chemical class 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002751 molybdenum Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141980A JPS56157066A (en) | 1980-05-09 | 1980-05-09 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6141980A JPS56157066A (en) | 1980-05-09 | 1980-05-09 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56157066A JPS56157066A (en) | 1981-12-04 |
| JPS6241429B2 true JPS6241429B2 (ko) | 1987-09-02 |
Family
ID=13170554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6141980A Granted JPS56157066A (en) | 1980-05-09 | 1980-05-09 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56157066A (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0323697A (ja) * | 1989-06-21 | 1991-01-31 | Matsushita Electric Ind Co Ltd | 電気部品のリード線切断成形方法および装置 |
| JPH0315231Y2 (ko) * | 1985-10-22 | 1991-04-03 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3523093B2 (ja) | 1997-11-28 | 2004-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
1980
- 1980-05-09 JP JP6141980A patent/JPS56157066A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0315231Y2 (ko) * | 1985-10-22 | 1991-04-03 | ||
| JPH0323697A (ja) * | 1989-06-21 | 1991-01-31 | Matsushita Electric Ind Co Ltd | 電気部品のリード線切断成形方法および装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56157066A (en) | 1981-12-04 |
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