JPS6237543B2 - - Google Patents
Info
- Publication number
- JPS6237543B2 JPS6237543B2 JP15196877A JP15196877A JPS6237543B2 JP S6237543 B2 JPS6237543 B2 JP S6237543B2 JP 15196877 A JP15196877 A JP 15196877A JP 15196877 A JP15196877 A JP 15196877A JP S6237543 B2 JPS6237543 B2 JP S6237543B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- silicon substrate
- oxide film
- source
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15196877A JPS5483778A (en) | 1977-12-16 | 1977-12-16 | Mos semiconductor device and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15196877A JPS5483778A (en) | 1977-12-16 | 1977-12-16 | Mos semiconductor device and its manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5483778A JPS5483778A (en) | 1979-07-04 |
JPS6237543B2 true JPS6237543B2 (fr) | 1987-08-13 |
Family
ID=15530143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15196877A Granted JPS5483778A (en) | 1977-12-16 | 1977-12-16 | Mos semiconductor device and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5483778A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5713769A (en) * | 1980-06-30 | 1982-01-23 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
US4324038A (en) * | 1980-11-24 | 1982-04-13 | Bell Telephone Laboratories, Incorporated | Method of fabricating MOS field effect transistors |
JPS57141963A (en) * | 1981-02-27 | 1982-09-02 | Toshiba Corp | Manufacture of semiconductor device |
JPS6042866A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 半導体装置及びその製造方法 |
-
1977
- 1977-12-16 JP JP15196877A patent/JPS5483778A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5483778A (en) | 1979-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2002299620A (ja) | 炭化珪素半導体装置の製造方法 | |
JPS6237543B2 (fr) | ||
JP2729422B2 (ja) | 半導体装置 | |
JPS60193371A (ja) | 半導体装置の製造方法 | |
JPH0127589B2 (fr) | ||
JPS6245071A (ja) | 半導体装置の製造方法 | |
JPH0491481A (ja) | Mis電界効果トランジスタ | |
JP3017838B2 (ja) | 半導体装置およびその製造方法 | |
JPH067596B2 (ja) | 半導体装置の製造方法 | |
KR910009042B1 (ko) | 반도체장치의 제조방법 | |
JPH1174513A (ja) | 絶縁ゲート型半導体装置およびその製造方法 | |
JPS63129664A (ja) | 半導体装置の製造方法 | |
JPS62241379A (ja) | 半導体装置の製造方法 | |
JPS6156448A (ja) | 相補型半導体装置の製造方法 | |
JPH0213827B2 (fr) | ||
JPH0527995B2 (fr) | ||
JP2002110813A (ja) | 半導体装置及びその製造方法 | |
JPS596579A (ja) | 半導体装置 | |
JPS6113392B2 (fr) | ||
JPH02304931A (ja) | 半導体装置及びその製造方法 | |
JPS61220372A (ja) | 半導体装置の製造方法 | |
JPH0330307B2 (fr) | ||
JPH05343703A (ja) | 不揮発性メモリの製造方法 | |
JPS6143865B2 (fr) | ||
JPS6353977A (ja) | 半導体装置の製造方法 |