JPS6237000B2 - - Google Patents

Info

Publication number
JPS6237000B2
JPS6237000B2 JP4079983A JP4079983A JPS6237000B2 JP S6237000 B2 JPS6237000 B2 JP S6237000B2 JP 4079983 A JP4079983 A JP 4079983A JP 4079983 A JP4079983 A JP 4079983A JP S6237000 B2 JPS6237000 B2 JP S6237000B2
Authority
JP
Japan
Prior art keywords
gas supply
supply pipe
gas
crystal growth
pipes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4079983A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59170000A (ja
Inventor
Yutaka Yoriume
Noryoshi Shibata
Juichi Noda
Noboru Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4079983A priority Critical patent/JPS59170000A/ja
Publication of JPS59170000A publication Critical patent/JPS59170000A/ja
Publication of JPS6237000B2 publication Critical patent/JPS6237000B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4079983A 1983-03-14 1983-03-14 結晶成長装置 Granted JPS59170000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4079983A JPS59170000A (ja) 1983-03-14 1983-03-14 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4079983A JPS59170000A (ja) 1983-03-14 1983-03-14 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS59170000A JPS59170000A (ja) 1984-09-26
JPS6237000B2 true JPS6237000B2 (enrdf_load_stackoverflow) 1987-08-10

Family

ID=12590670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4079983A Granted JPS59170000A (ja) 1983-03-14 1983-03-14 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS59170000A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770485B2 (ja) * 1985-12-20 1995-07-31 キヤノン株式会社 光起電力素子の連続製造装置
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
JPS63299325A (ja) * 1987-05-29 1988-12-06 Sony Corp 気相成長装置

Also Published As

Publication number Publication date
JPS59170000A (ja) 1984-09-26

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