JPS6233485A - 平坦型ジヨセフソン接合素子の作製方法 - Google Patents
平坦型ジヨセフソン接合素子の作製方法Info
- Publication number
- JPS6233485A JPS6233485A JP60172516A JP17251685A JPS6233485A JP S6233485 A JPS6233485 A JP S6233485A JP 60172516 A JP60172516 A JP 60172516A JP 17251685 A JP17251685 A JP 17251685A JP S6233485 A JPS6233485 A JP S6233485A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- film
- sio
- development
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000001312 dry etching Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 7
- 229920001665 Poly-4-vinylphenol Polymers 0.000 claims description 2
- -1 azide compound Chemical class 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 5
- 239000010409 thin film Substances 0.000 claims 5
- 239000010408 film Substances 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000001020 plasma etching Methods 0.000 abstract description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004738 SiO1 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60172516A JPS6233485A (ja) | 1985-08-07 | 1985-08-07 | 平坦型ジヨセフソン接合素子の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60172516A JPS6233485A (ja) | 1985-08-07 | 1985-08-07 | 平坦型ジヨセフソン接合素子の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6233485A true JPS6233485A (ja) | 1987-02-13 |
| JPH0513395B2 JPH0513395B2 (enrdf_load_stackoverflow) | 1993-02-22 |
Family
ID=15943404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60172516A Granted JPS6233485A (ja) | 1985-08-07 | 1985-08-07 | 平坦型ジヨセフソン接合素子の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6233485A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710989A (en) * | 1980-06-25 | 1982-01-20 | Hitachi Ltd | Pattern manufacture for jusephson-junction element |
| JPS58209183A (ja) * | 1982-05-31 | 1983-12-06 | Nec Corp | ジヨセフソン接合素子の製造方法 |
-
1985
- 1985-08-07 JP JP60172516A patent/JPS6233485A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710989A (en) * | 1980-06-25 | 1982-01-20 | Hitachi Ltd | Pattern manufacture for jusephson-junction element |
| JPS58209183A (ja) * | 1982-05-31 | 1983-12-06 | Nec Corp | ジヨセフソン接合素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0513395B2 (enrdf_load_stackoverflow) | 1993-02-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |